2SA2039

Ordering number : ENN6912B 2SA2039 / 2SC5706 2SA2039 / 2SC5706 Applications • PNP / NPN Epitaxial Planar Silicon Transistors High Current Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features • • • • • Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2039 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings (--50)100 (--50)100 (--)50 (--)6 (--)5 (--)7.5 (--)1.2 0.8 15 150 --55 to +150 Unit V V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(--)500mA Ratings min typ max (--)1 (--)1 200 (360)400 560 MHz Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62405EA MS IM TB-00001404 / 30101 TS IM TA-3232 No.6912-1/5 2SA2039 / 2SC5706 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA IC=(--)2A, IB=(-)100mA IC=(--)2A, IB=(-)100mA IC=(--)10µA, IE=0A IC=(--)100µA, RBE=0Ω IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--50)100 (--50)100 (--)50 (--)6 (30)35 (230)300 (15)20 Ratings min typ (24)15 (--115)90 (--195)135 (--255)160 (--430)240 (--)0.89 (--)1.2 max Unit pF mV mV V V V V V ns ns ns Package Dimensions unit : mm 7518-003 6.5 5.0 2.3 Package Dimensions unit : mm 7003-003 1.5 0.5 4 4 7.0 1.5 6.5 5.0 2.3 0.5 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 2 0.8 1.2 3 0 to 0.2 1.2 0.6 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR10 50Ω IB1 IB2 OUTPUT RB + 100µF + 470µF VCC=25V 25Ω VBE= --5V 10IB1= --10IB2=IC=1A For PNP, the polarity is reversed. No.6912-2/5 2SA2039 / 2SC5706 --5 IC -- VCE 2SA2039 5 IC -- VCE 2SC5706 80m A 70mA Collector Current, IC -- A --3 80m A --90m 0 --1 A 0m 0m A --7 A 0mA A --5 --60m Collector Current, IC -- A 3 90m --4 4 60mA 50mA 40mA 30mA A 20mA 100m --2 A --30m --20mA --40mA --10mA A 2 10mA --5mA 5mA 1 --1 0 0 --0.4 --0.8 --1.0 --1.2 IB=0mA --1.4 IT02974 0 0 0.4 0.8 1.0 IB=0mA 1.2 1.4 IT02975 Collector-to-Emitter Voltage, VCE -- V --4.0 --3.5 Collector-to-Emitter Voltage, VCE -- V 4.0 3.5 IC -- VBE IC -- VBE 2SC5706 VCE=2V 2SA2039 VCE= --2V Collector Current, IC -- A --3.0 --2.5 --2.0 --1.5 Collector Current, IC -- A 3.0 2.5 2.0 1.5 1.0 0.5 0 °C Ta=7 5 --1.0 --0.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 0 0.2 0.4 0.6 Ta=7 5°C 25°C --25°C 0.8 1.0 25°C --25° C 1.2 1.4 IT00155 Base-to-Emitter Voltage, VBE -- V 1000 7 5 IT00154 1000 7 5 Base-to-Emitter Voltage, VBE -- V hFE -- IC hFE -- IC Ta=75°C --25°C 25°C 2SC5706 VCE=2V 2SA2039 VCE= --2V DC Current Gain, hFE DC Current Gain, hFE 3 2 Ta=75°C 25°C --25°C 3 2 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A --10000 7 5 3 2 5 7 --10 IT00156 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 VCE(sat) -- IC Collector Current, IC -- A 1000 5 7 10 IT00157 VCE(sat) -- IC 2SC5706 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SA2039 IC / IB=20 7 5 3 2 --1000 7 5 3 2 --100 7 5 3 2 --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT02976 100 7 5 3 2 C 75° Ta= °C --25 25 °C --2 C 5° 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 25 2 = Ta °C 3 °C 75 Collector Current, IC -- A Collector Current, IC -- A 5 7 10 IT02978 No.6912-3/5 2SA2039 / 2SC5706 --10000 7 5 3 2 VCE(sat) -- IC 2SA2039 IC / IB=50 10000 VCE(sat) -- IC 2SC5706 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 --1000 7 5 3 2 --100 7 5 3 2 --10 --0.01 2 3 5 7 --0.1 7 Ta= 5°C 5°C --2 7 Ta= 5°C 5 --2 °C °C C 25° 2 3 5 7 --1.0 2 3 25 2 3 5 7 0.1 2 3 Collector Current, IC -- A --10 7 5 7 --10 IT02977 10 0.01 5 7 1.0 2 3 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector Current, IC -- A 10 5 7 10 IT02979 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 2SA2039 IC / IB=50 7 5 3 2 1.0 7 5 3 2 0.1 0.01 2SC5706 IC / IB=50 --1.0 7 5 3 2 Ta= --25°C Ta= --25°C 75°C 25°C 75°C 25°C --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 3 5 7 --10 IT00162 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 5 7 10 IT00163 Cob -- VCB 2SA2039 f=1MHz Output Capacitance, Cob -- pF Cob -- VCB 3 2 100 7 5 3 2 10 7 5 3 2 2SC5706 f=1MHz Output Capacitance, Cob -- pF 2 100 7 5 3 2 10 7 5 3 2 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 5 7 --100 IT00164 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 1000 7 f T -- IC Gain-Bandwidth Product, f T -- MHz Collector-to-Base Voltage, VCB -- V 1000 5 7 100 IT00165 f T -- IC Gain-Bandwidth Product, f T -- MHz 5 3 2 2SA2039 VCE= --10V 7 5 3 2 2SC5706 VCE=10V 100 7 5 3 2 100 7 5 3 2 10 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 Collector Current, IC -- A 5 7 --10 IT00166 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT00167 No.6912-4/5 2SA2039 / 2SC5706 2 10 7 5 ASO ICP=7.5A 10ms 1ms 50 0µ DC IC=5A s op er ati DC on op (T era c= tio 25 n( °C Ta ) =2 5° C) 1.0 0.9 PC -- Ta 2SA2039 / 2SC5706 100ms Collector Dissipation, PC -- W Collector Current, IC -- A 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 0µ 3 2 1.0 7 5 3 2 0.1 7 5 3 2 s No he at sin k 0.01 0.1 2SA2039 / 2SC5706 Tc=25°C Single pulse For PNP, the minus sign(--)is omitted 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 18 16 15 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 5 7 100 IT02980 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT02981 PC -- Tc 2SA2039 / 2SC5706 Collector Dissipation, PC -- W 140 160 Case Temperature, Tc -- °C IT02982 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.6912-5/5