2SA2040_05

Ordering number : ENN6913A 2SA2040 / 2SC5707 2SA2040 / 2SC5707 Applications • PNP / NPN Epitaxial Planar Silicon Transistors High Current Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features • • • • • Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2040 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings (--50)100 (--50)100 (--)50 (--)6 (--)8 (--)11 (--)2 1.0 15 150 --55 to +150 Unit V V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(--)500mA Ratings min typ max (--)0.1 (--)0.1 200 (290)330 560 MHz Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62405EA MS IM TB-00001403 / 30101 TS IM TA-3233 No.6913-1/5 2SA2040 / 2SC5707 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)10V, f=1MHz IC=(--)3.5A, IB=(-)175mA IC=(--)2A, IB=(--)40mA IC=(--)2A, IB=(--)40mA IC=(--)10µA, IE=0A IC=(--)100µA, RBE=0Ω IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--50)100 (--50)100 (--)50 (--)6 (40)30 (225)420 25 Ratings min typ (50)28 (--230)160 (--390)240 (-240)110 (--400)170 (--)0.83 (--)1.2 max Unit pF mV mV V V V V V ns ns ns Package Dimensions unit : mm 7518-003 6.5 5.0 2.3 Package Dimensions unit : mm 7003-003 1.5 0.5 4 4 7.0 1.5 6.5 5.0 2.3 0.5 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 2 0.8 1.2 3 0 to 0.2 1.2 0.6 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR 50Ω IB1 IB2 RB + 100µF + 470µF VCC=25V OUTPUT RL VBE= --5V 20IB1= --20IB2=IC=2.5A For PNP, the polarity is reversed. No.6913-2/5 2SA2040 / 2SC5707 --7 IC -- VCE 2SA2040 --90mA --80mA --70mA --60mA 7 IC -- VCE 90mA 80mA --6 6 Collector Current, IC -- A Collector Current, IC -- A --5 5 --4 0 --1 0 mA --30mA 4 100 A --50m 0mA --4 70mA 60mA 50mA 40mA 30mA 20mA 10mA --20mA --3 3 --2 --10mA 2 --1 0 0 --0.4 --0.8 --1.2 1 IB=0mA --1.6 --2.0 IT00206 mA 0 0 2SC5707 0.4 0.8 1.2 1.6 IB=0mA 2.0 IT00207 Collector-to-Emitter Voltage, VCE -- V --8 --7 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 8 7 IC -- VBE 2SA2040 VCE= --2V Collector Current, IC -- A 2SC5707 VCE=2V Collector Current, IC -- A --6 --5 --4 --3 6 5 4 3 2 1 0 --2 --1 0 0 --0.2 --0.4 --0.6 Ta= 75° 25°C C --25° C --0.8 --1.0 --1.2 --1.4 0 0.2 0.4 0.6 Ta=7 5°C 25°C --25° C 0.8 1.0 1.2 1.4 IT00209 Base-to-Emitter Voltage, VBE -- V 1000 7 5 IT00208 1000 hFE -- IC Base-to-Emitter Voltage, VBE -- V hFE -- IC 2SA2040 VCE= --2V DC Current Gain, hFE 7 5 3 2 Ta=75°C 25°C --25°C 2SC5707 VCE=2V DC Current Gain, hFE 3 2 Ta=75°C 25°C --25°C 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A --1000 7 5 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT00210 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 VCE(sat) -- IC Collector Current, IC -- A 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT00211 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5°C Ta=7 °C --25 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SA2040 IC / IB=20 2SC5707 IC / IB=20 °C 25 7 Ta= C --25° 5°C 25 °C Collector Current, IC -- A 5 7 --10 IT00212 Collector Current, IC -- A 5 7 10 IT00214 No.6913-3/5 2SA2040 / 2SC5707 --10000 7 5 3 2 VCE(sat) -- IC 2SA2040 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0.01 2 3 VCE(sat) -- IC 2SC5707 IC / IB=50 --1000 7 5 3 2 --100 7 5 3 2 --10 --0.01 2 3 7 Ta= --25°C 5 7 --0.1 2 5°C 25°C 5°C Ta=7 C --25° 5 7 0.1 2 3 5 7 1.0 25°C 3 5 7 --1.0 2 3 Collector Current, IC -- A --10000 5 7 --10 IT00213 2 3 VBE(sat) -- IC Collector Current, IC -- A 10000 5 7 10 IT00215 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Base-to-Emitter Saturation Voltage, VBE(sat) -- mV 7 5 3 2 2SA2040 IC / IB=50 7 5 3 2 2SC5707 IC / IB=50 --1000 7 5 3 2 Ta= --25°C 75°C 25°C 1000 7 5 3 2 Ta= --25°C 75°C 25°C --100 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 3 5 7 --10 IT00216 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Cob -- VCB Collector Current, IC -- A 5 5 7 10 IT00217 Cob -- VCB 2SC5707 f=1MHz 2SA2040 f=1MHz Output Capacitance, Cob -- pF 3 2 100 7 5 3 2 10 7 5 3 2 Output Capacitance, Cob -- pF 2 100 7 5 3 2 10 7 5 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 1000 7 IT00218 1000 f T -- IC Collector-to-Base Voltage, VCB -- V IT00219 f T -- IC Gain-Bandwidth Product, f T -- MHz 5 3 2 Gain-Bandwidth Product, f T -- MHz 2SA2040 VCE= --10V 7 5 3 2 2SC5707 VCE=10V 100 7 5 3 2 100 7 5 3 2 10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 Collector Current, IC -- A 5 7 --10 IT00220 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT00221 No.6913-4/5 2SA2040 / 2SC5707 2 10 7 5 ASO ICP=11A 100ms 10ms 50 1m 0µs IC=8A DC s Op era DC tio Op n( era Tc tio =2 n( 5° Ta C) =2 5° C) 1.2 PC -- Ta 2SA2040 / 2SC5707 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Collector Dissipation, PC -- W 10 s 0µ 1.0 Collector Current, IC -- A 0.8 0.6 No he at sin k 0.4 0.01 0.1 2SA2040 / 2SC5707 Tc=25°C Single pulse For PNP, the minus sign(--)is omitted 2 3 5 7 1.0 2 3 5 7 10 2 3 0.2 0 5 7 100 IT02971 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V 18 16 15 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C IT02972 PC -- Tc 2SA2040 / 2SC5707 Collector Dissipation, PC -- W 140 160 Case Temperature, Tc -- °C IT02973 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.6913-5/5