2SA2099

Ordering number : EN7331A 2SA2099 / 2SC5888 SANYO Semiconductors DATA SHEET 2SA2099 / 2SC5888 Applications • PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2099 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings (--50)60 (--)50 (--)6 (--)10 (--)13 (--)2 2 25 150 --55 to +150 Unit V V V A A A W W °C °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32608FA TI IM / D2502 TS IM TA-3711 No.7331-1/5 2SA2099 / 2SC5888 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(-)40V, IE=0A VEB=(-)4V, IC=0A VCE=(-)2V, IC=(--)1A VCE=(-)5V, IC=(--)1A VCB=(-)10V, f=1MHz IC=(--)5A, IB=(-)250mA IC=(--)5A, IB=(-)250mA IC=(--)100μA, IE=0A IC=(--)1mA, RBE=∞ IE=(-)100μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--50)60 (--)50 (--)6 (70)40 (650)1000 (60)80 200 (130)200 (90)60 (--250)180 (-500)360 (--)0.93 (-)1.4 Ratings min typ max (--)10 (--)10 (560)700 MHz pF mV V V V V ns ns ns Unit μA μA Package Dimensions unit : mm (typ) 7508-002 Switching Time Test Circuit IB1 OUTPUT IB2 VR 50Ω RB + 100μF VBE= --5V + 470μF VCC=20V PW=20μs D.C.≤1% 10.0 3.2 4.5 2.8 INPUT 3.5 RL 7.2 16.0 18.1 1.6 1.2 0.75 IC=20IB1= --20IB2=3A (For PNP, the polarity is reversed.) 14.0 0.7 5.6 123 2.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 2.55 2.55 --10 --9 --8 IC -- VCE 2SA2099 --9 0m 10 IC -- VCE 2SC5888 40mA 30mA 10 A -- 0m A Collector Current, IC -- A Collector Current, IC -- A mA --70mA --60mA --50mA 9 8 7 6 5 4 3 2 1 --8 0 --7 --6 --5 --4 --3 --2 --1 0 0 --40mA --30mA --20mA 20mA 10mA --10mA IB=0mA --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 From top 100mA 90mA 80mA 70mA 60mA IB=0mA 50mA 3.5 4.0 4.5 5.0 Collector-to-Emitter Voltage, VCE -- V IT04794 Collector-to-Emitter Voltage, VCE -- V IT04795 No.7331-2/5 2SA2099 / 2SC5888 2SA2099 --18mA --16mA --14mA --12mA A --5.0 --4.5 IC -- VCE --20mA 5.0 4.5 IC -- VCE 14m 12 mA 10mA 8mA 6mA Collector Current, IC -- A --3.5 --3.0 --2.5 Collector Current, IC -- A --4.0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 --10mA --8mA --6mA 16m A 4mA --2.0 --1.5 --1.0 --0.5 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --4mA --2mA IB=0mA --9 --10 2mA 0 0 1 2 3 4 5 6 2SC5888 From top 20mA IB=0mA 18mA 7 8 9 10 Collector-to-Emitter Voltage, VCE -- V --12 IT04796 12 IC -- VBE Collector-to-Emitter Voltage, VCE -- V IT04797 IC -- VBE 2SC5888 VCE=2V 2SA2099 VCE= --2V --10 10 Collector Current, IC -- A --8 Collector Current, IC -- A 8 --6 6 --4 5°C 25°C --25° C 4 --2 2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT04798 0 0 0.2 0.4 0.6 Ta= 7 5°C 25°C --25° C 0.8 Ta= 7 1.0 1.2 IT04799 Base-to-Emitter Voltage, VBE -- V 1000 7 5 hFE -- IC Base-to-Emitter Voltage, VBE -- V 1000 hFE -- IC DC Current Gain, hFE DC Current Gain, hFE 3 2 Ta=75°C 25°C --25°C 2SA2099 VCE= --2V 7 5 Ta=75°C 2SC5888 VCE=2V 25°C --25°C 3 2 100 7 5 3 --0.01 100 7 5 0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 3 5 7 --10 IT04800 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 5 7 10 IT04801 f T -- IC f T -- IC 2SC5888 VCE=5V Gain-Bandwidth Product, f T -- MHz 2 Gain-Bandwidth Product, f T -- MHz 2SA2099 VCE= --5V 3 2 100 7 5 100 7 5 3 2 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 7 --10 IT04802 5 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT04803 No.7331-3/5 2SA2099 / 2SC5888 1000 7 Cob -- VCB 2SA2099 f=1MHz Output Capacitance, Cob -- pF 1000 7 5 3 2 Cob -- VCB 2SC5888 f=1MHz Output Capacitance, Cob -- pF 5 3 2 100 7 5 3 2 100 7 5 3 2 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V --1000 7 5 7 --100 IT04804 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 1000 5 7 100 IT04805 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 --100 7 5 3 2 --10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SA2099 IC / IB=20 7 5 3 2 100 7 5 3 2 10 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 2SC5888 IC / IB=20 Ta 5 =7 °C 5°C C --2 25° °C 75 a= T 5°C 5°C --2 2 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 3 2 5 7 --10 IT04806 3 VCE(sat) -- IC Collector Current, IC -- A 1000 5 7 10 IT04807 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SA2099 IC / IB=50 7 5 3 2 2SC5888 IC / IB=50 --1000 7 5 3 2 --100 7 5 3 2 --10 --0.01 100 7 5 3 2 = Ta °C --25 °C 75 2 C 5° = Ta °C 75 C 5° --2 25 °C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 3 5 7 --10 IT04808 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 VBE(sat) -- IC Collector Current, IC -- A 3 5 7 10 IT04809 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- mV 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV 2SA2099 IC / IB=20 2SC5888 IC / IB=20 2 --1000 Ta= --25°C 75°C --1000 Ta= --25°C 7 7 75°C 25°C 5 25°C 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 IT04810 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 IT04811 No.7331-4/5 2SA2099 / 2SC5888 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO ICP=13A IC=10A ≤10μs 2.5 PC -- Ta Collector Dissipation, PC -- W 50μs s 0μ 10 0 μ s 50 ms 1 Collector Current, IC -- A 2.0 10 0m 10 s ms DC 1.5 No n tio era op Tc=25°C Single Pulse (For PNP, minus sign is omitted.) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 he at sin k 1.0 0.5 0.01 0.1 0 0 20 40 60 80 100 120 140 160 IT05371 Collector-to-Emitter Voltage, VCE -- V 30 Ambient Temperature, Ta -- °C IT05372 PC -- Tc Collector Dissipation, PC -- W 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C IT05373 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2008. Specifications and information herein are subject to change without notice. PS No.7331-5/5