2SA2124_09

Ordering number : EN7920A 2SA2124 SANYO Semiconductors DATA SHEET 2SA2124 Applications • PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT processes. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (450mm2✕0.8m) Tc=25°C Conditions Ratings --30 --30 --6 --2 --5 --400 1.3 3.5 150 --55 to +150 Unit V V V A A mA W W °C °C Marking : AX Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 80509 TK IM TC-00002048 / D2004EA TS IM TB-00000072 No.7920-1/4 2SA2124 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE(1) hFE(2) fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob ton tstg tf Conditions VCB=-30V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--100mA VCE=-2V, IC=-1.5A VCE=-10V, IC=--300mA IC=-1.5A, IB=--75mA IC=-1.5V, IB=-75mA IC=- μA, IE=0A -10 IC=-1mA, RBE=∞ IE=--10μA, IC=0A VCB=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --30 --30 --6 17 45 200 23 200 65 440 -0.2 -0.95 --0.4 --1.2 MHz V V V V V pF ns ns ns Ratings min typ max --0.1 --0.1 560 Unit μA μA Package Dimensions unit : mm (typ) 7007B-004 Switching Time Test Circuit IB1 IB2 VR 50Ω RB PW=20μs D.C.≤1% INPUT IC OUTPUT RL + 470μF VCC= --12V + 220μF VBE=5V IC= --20IB1=20IB2= --0.5A No.7920-2/4 2SA2124 --2.0 IC -- VCE --3 5m A --3 0m A --2.0 IC -- VBE VCE= --2V --1.8 --4 0 mA --25 mA mA --20 --15mA --10mA Collector Current, IC -- A Collector Current, IC -- A --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --1.5 --5mA --1.0 --2mA --0.4 --0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --0.5 IB=0mA --1.6 --1.8 --2.0 0 0 --0.2 --0.4 --0.6 Ta= 75°C 25°C --25 °C --0.8 --1.0 IT07249 Collector-to-Emitter Voltage, VCE -- V 7 5 IT07248 1000 Base-to-Emitter Voltage, VBE -- V hFE -- IC f T -- IC VCE= --2V Ta=75°C VCE= --10V Gain-Bandwidth Product, f T -- MHz 5 7 --0.1 2 3 5 7 --1.0 2 3 7 5 DC Current Gain, hFE 3 25°C --25°C 3 2 2 100 100 7 5 --0.01 7 5 --0.01 2 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 7 IT07250 5 Cob -- VCB Collector Current, IC -- A IT07251 VCE(sat) -- IC f=1MHz IC / IB=20 Output Capacitance, Cob -- pF 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 3 --0.1 7 5 3 2 2 C 5° =7 C Ta 5° --2 25 °C 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector-to-Base Voltage, VCB -- V 3 IT07252 --10 7 5 3 VBE(sat) -- IC Collector Current, IC -- A IT07253 ASO IC / IB=20 ICP= --5A IC= --2A