2SA2153

Ordering number : ENN8123 2SA2153 2SA2153 Applications • PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (450mm2!0.8mm) Tc=25°C Conditions Ratings --50 --50 --6 --2 --4 --400 1.3 3.5 150 --55 to +150 Unit V V V A A mA W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) VCB=-40V, IE=0 VEB=--4V, IC=0 VCE=-2V, IC=-100mA VCE=-2V, IC=-1.5A VCE=-10V, IC=-300mA VCB=-10V, f=1MHz IC=-1A, IB=--50mA IC=-1A, IB=--50mA 200 40 420 16 --0.2 --0.9 --0.4 --1.2 MHz pF V V Conditions Ratings min typ max --1 --1 560 Unit µA µA Marking : AZ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21805EA TS IM TB-00000664 No.8123-1/4 2SA2153 Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=- µA, IE=0 -10 IC=-1mA, RBE=∞ IE=--10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --50 --50 --6 35 200 24 typ max Unit V V V ns ns ns Package Dimensions unit : mm 2038B 4.5 1.6 1.5 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR IB1 IB2 IC OUTPUT RB + 100µF + 470µF 2.5 RL 4.0 1 0.4 0.5 1.5 2 3 0.4 VBE=5V VCC= --25V 10IB1= --10IB2= IC= --700mA 3.0 0.75 1.0 50Ω 1 : Base 2 : Collector 3 : Emitter SANYO : PCP --2.0 --1.8 IC -- VCE 0 --5 mA --60 --2.0 IC -- VBE VCE= --2V mA Collector Current, IC -- A --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 Collector Current, IC -- A --1.6 mA --40 mA --30 mA --20 --10mA --5mA --4mA --3mA --2mA --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.4 --1mA --0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --0.2 IB=0 --1.8 --2.0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 Collector-to-Emitter Voltage, VCE -- V IT08346 Base-to-Emitter Voltage, VBE -- V Ta= 7 5°C 25° C --25° C --0.6 IT08347 No.8123-2/4 2SA2153 7 5 hFE -- IC VCE= --2V Gain-Bandwidth Product, fT -- MHz 1000 7 5 fT -- IC VCE= --10V Ta=75°C 3 25°C --25°C DC Current Gain, hFE 2 3 2 100 7 5 100 7 5 --0.01 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 7 5 IT08348 --1.0 Cob -- VCB f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector Current, IC -- A IT08349 VCE(sat) -- IC 7 5 3 2 IC / IB=20 Output Capacitance, Cob -- pF 3 2 --0.1 7 5 3 2 = Ta 10 7 5 --0.1 °C 75 5°C --2 °C 25 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT08350 --0.01 --0.01 Collector-to-Base Voltage, VCB -- V 3 VBE(sat) -- IC Collector Current, IC -- A 7 5 3 2 IT08351 ASO IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 ICP= --4A IC= --2A 50 0µ