2SA2179

Ordering number : ENA0199 2SA2179 2SA2179 Applications • PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications High-speed switching applications (switching regulators, drive circuit). Features • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings --50 --50 --6 --13 --15 --2 2 25 150 --55 to +150 Unit V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=-40V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--270mA VCE=-2V, IC=--8.1A VCE=-5V, IC=--700mA VCB=-10V, f=1MHz Ratings min typ max --10 --10 200 50 110 100 MHz pF 500 Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2505FA MS IM TB-00001828 No. A0199-1/4 2SA2179 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--6A, IB=--300mA IC=--6A, IB=--300mA IC=--100µA, IE=0A IC=--1mA, RBE=∞ IE=--100µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --50 --50 --6 80 265 43 Ratings min typ --250 max --500 --1.2 Unit V V V V V ns ns ns Package Dimensions unit : mm 7508-002 10.0 3.2 3.5 7.2 4.5 2.8 Switching Time Test Circuit IB1 IB2 OUTPUT PW=20µs D.C.≤1% INPUT VR 50Ω 16.0 RB + 100µF + 470µF RL 18.1 VBE=5V 1.6 1.2 0.75 14.0 0.7 5.6 VCC= --25V IC=20IB1= --20IB2= --6.7A 123 2.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 2.55 2.55 ---600m --500 mA 400mA A --300m A --9 --2 00 --80 m mA A --10 IC -- VCE 0mA A --12 --140m --100mA --80mA --5.0 --4.5 --4.0 IC -- VCE A A 0m --6 --50m 0 --7 mA --40mA --30mA Collector Current, IC -- A --7 --6 --5 --4 --3 --2 --1 0 0 --40mA --2.5 --2.0 --1.5 --100 m --180 mA --16 0mA --60mA Collector Current, IC -- A --3.5 --3.0 A --90mA --8 --20mA --10mA --5mA --20mA --1.0 --0.5 IB=0mA --0.5 --1.0 --1.5 --2.0 IT10080 0 0 --0.2 --0.4 --0.6 IB=0mA --0.8 --1.0 IT10081 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No. A0199-2/4 2SA2179 1000 7 5 hFE -- IC VCE= --2V Ta=75°C 1000 7 5 hFE -- IC Ta=25°C DC Current Gain, hFE 2 25°C --25°C DC Current Gain, hFE 3 3 -2V V =--1 E mV V C 00 --7 V 0m --50 2 0 --20 100 7 5 3 2 10 --0.01 100 7 5 3 2 10 --0.01 mV 23 5 7 --0.1 23 5 7 --1.0 23 Collector Current, IC -- A 3 5 7 --10 23 IT10082 23 5 7 --0.1 23 5 7 --1.0 23 Collector Current, IC -- A 5 3 5 7 --10 23 IT10083 fT -- IC VCE= --10V Output Capacitance, Cob -- pF Cob -- VCB f=1MHz Gain-Bandwidth Product, fT -- MHz 2 2 100 7 5 100 7 5 3 2 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A --1.0 7 5 3 2 --0.1 7 5 3 2 5 7 --10 IT10084 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 7 5 IT10085 VCE(sat) -- IC IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 °C 75 C a= T 5° --2 °C 25 = Ta °C 75 5°C --2 C --0.01 7 5 --0.01 25° 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --0.1 2 3 5 7 --1.0 23 5 7 --10 2 3 --0.01 --0.01 2 3 5 7 --10 2 3 Collector Current, IC -- A --14 IT10086 3 IC -- VBE Collector Current, IC -- A IT10087 VBE(sat) -- IC VCE=--2V Base-to-Emitter Saturation Voltage, VBE(sat) -- V --12 2 IC / IB=20 Collector Current, IC -- A --10 --8 --1.0 5°C C --25°C Ta= 7 --6 7 --4 Ta= --25°C 25°C 75°C --2 0 0 --0.2 --0.4 --0.6 --0.8 25° 5 --1.0 --1.2 --1.4 IT10118 3 --0.01 23 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A IT10089 No. A0199-3/4 2SA2179 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Forward Bias A S O ICP= --15A Collector Dissipation, PC -- W 2.5 PC -- Ta IC= --13A 100 ms 10 op er Collector Current, IC -- A P T= 1m m s 50 2.0 DC s 0µ s 1.5 ati No on he at 1.0 sin k 0.5 --0.01 --1.0 Tc=25°C Single pulse 2 3 5 7 --10 2 3 5 0 7 --100 IT10090 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V 30 Ambient Temperature, Ta -- °C IT10091 PC -- Tc Collector Dissipation, PC -- W 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C IT10092 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice. PS No. A0199-4/4