Ordering number : ENA0269
2SA2186
2SA2186
Applications
•
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
• • • •
Adoption of MBIT processes. High current capacity. Low collector-to-emitter saturation voltage. High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings -50 -50 --6 --2 --4 --400 0.9 150 --55 to +150 Unit V V V A A mA W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) Conditions VCB=-40V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--100mA VCE=-2V, IC=--1.5A VCE=-10V, IC=--300mA VCB=-10V, f=1MHz IC=--1A, IB=--50mA IC=--1A, IB=--50mA Ratings min typ max --1 --1 200 40 420 16 --0.22 --0.9 --0.43 --1.2 MHz pF V V 560 Unit µA µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2805EA MS IM TB-00001911 No. A0269-1/4
2SA2186
Continued from preceding page.
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--10µA, IE=0A IC=--1mA, RBE=∞ IE=--10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --50 --50 --6 35 200 24 typ max Unit V V V ns ns ns
Package Dimensions unit : mm 7519-003
6.9 1.45 2.5 1.0
Switching Time Test Circuit
PW=20µs D.C.≤1% INPUT
IB1 IB2 VR 50Ω RB
IC
OUTPUT
RL + 470µF VCC= --25V
4.5
1.0
1.0
+ 100µF
1.0
0.6 0.5
4.0
VBE=5V
0.9
1
2
3
0.45
IC=10IB1= --10IB2= --0.7A
2.54
2.54
1 : Emitter 2 : Collector 3 : Base SANYO : NMP
--2.0 --1.8
IC -- VCE
A 0m
--2.0
IC -- VBE
VCE= --2V
--50
mA
--30
mA
--20m
A
--1.8
Collector Current, IC -- A
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
--10mA --8mA
Collector Current, IC -- A
--1.6
--4
--1.6 --1.4 --1.2 --1.0 --0.8
--6mA
--4mA --2mA
Ta= 75
--0.2 --0.4 --0.6
°C 25°C
--0.4 --0.2
IB=0mA
--1.6 --1.8 --2.0
0 0
--0.8
--25°
--1.0
--0.6
C
--1.2 IT10527
Collector-to-Emitter Voltage, VCE -- V
1000 7 5
IT10526 1000
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
f T -- IC
VCE= --2V
Ta=75°C
25°C
VCE= --10V
Gain-Bandwidth Product, f T -- MHz
7 --0.1 2 3 5 7 --1.0 2 3
7 5
DC Current Gain, hFE
3 2
--25°C
3
2
100 7 5 3 --0.01
100 7 5 --0.01
2
3
5
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Collector Current, IC -- A
IT10528
Collector Current, IC -- A
IT10529
No. A0269-2/4
2SA2186
100 7
Cob -- VCB
f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
7 5
VCE(sat) -- IC
IC / IB=10
Output Capacitance, Cob -- pF
5
3 2
3 2
--0.1 7 5 3 2
= Ta
°C 75
--2
C 5°
10 7 5 --0.1
°C 25
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
7
--0.01 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Collector-to-Base Voltage, VCB -- V
--1.0 7
IT10530 3
VCE(sat) -- IC
Collector Current, IC -- A
IT10531
VBE(sat) -- IC
IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V
IC / IB=10
2
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
5 3 2
--0.1 7 5 3 2
--1.0
= Ta
°C 75
--2
°C
C Ta= --25°
C 5°
7
75°C °C 25
25
5
--0.01 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
3 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Collector Current, IC -- A
3
IT10532 7 5 3
Collector Current, IC -- A
IT10533
VBE(sat) -- IC
ASO
ICP= --4A IC= --2A
10
10
IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2
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