2SA2197

Ordering number : ENA0463 2SA2197 / 2SC6102 SANYO Semiconductors DATA SHEET 2SA2197 / 2SC6102 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2197 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings (--30)40 (--)30 (-)6 (-)7 (-)9 (--)1.2 1 10 150 --55 to +150 Unit V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz Ratings min typ max (--)0.1 (--)0.1 200 (250)290 (52)40 560 MHz pF Unit µA µA Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92706EA MS IM TC-00000207 No. A0463-1/5 2SA2197 / 2SC6102 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=(--)2.5A, IB=(--)50mA VCE=(--)2.5V, IB=(--)50mA IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--30)40 (--)30 (--)6 (30)30 (190)320 (17)14 Ratings min typ (--160)125 (--)0.84 max (--240)185 (--)1.2 Unit mV V V V V ns ns ns Package Dimensions unit : mm (typ) 7515-002 8.0 3.0 4.0 2.7 Switching Time Test Circuit IB1 OUTPUT IB2 VR RB + 470µF VCC=12V PW=20µs D.C.≤1% INPUT 50Ω RL + 7.0 11.0 1.6 0.8 0.8 0.6 1.5 100µF VBE= --5V 0.5 15.5 3.0 20IB1= --20IB2=IC=2.5A For PNP, the polarity is reversed. 1 2 3 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 2.4 4.8 --7 IC -- VCE 2SA2197 7 IC -- VCE 2SC6102 50m A --50mA --40mA --30mA --25mA Collector Current, IC -- A 6 40m A --6 30mA 25mA Collector Current, IC -- A --5 5 20mA 15mA 4 --4 --20mA --15mA --3 3 10mA --10mA --2 2 --5mA --1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 5mA 1 IB=0mA --1.8 --2.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IB=0mA 1.8 2.0 Collector-to-Emitter Voltage, VCE -- V IT11478 Collector-to-Emitter Voltage, VCE -- V IT11479 No. A0463-2/5 2SA2197 / 2SC6102 --7 IC -- VBE 2SA2197 VCE= --2V Collector Current, IC -- A 7 IC -- VBE 2SC6102 VCE=2V --6 6 Collector Current, IC -- A --5 5 --4 4 --3 3 --2 2 --1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT11298 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT11305 Base-to-Emitter Voltage, VBE -- V 1000 7 5 Base-to-Emitter Voltage, VBE -- V 1000 7 5 hFE -- IC 2SA2197 VCE= --2V Ta=75°C hFE -- IC 2SC6102 VCE=2V DC Current Gain, hFE DC Current Gain, hFE 3 25°C 3 Ta=75°C 25°C 2 --25°C 2 --25°C 100 7 5 --0.01 100 7 5 0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 3 5 7 --10 IT11299 2 3 5 7 0.1 2 3 Ta=7 5°C 25°C --25°C 5 7 1.0 2 Ta=7 5 25°C --25°C °C 3 Cob -- VCB Collector Current, IC -- A 3 2 5 7 10 IT11306 Cob -- VCB 2SA2197 f=1MHz Output Capacitance, Cob -- pF 2SC6102 f=1MHz 2 Output Capacitance, Cob -- pF 100 7 5 100 7 5 3 2 3 2 --0.1 10 0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 Collector-to-Base Voltage, VCB -- V 5 IT11300 7 f T -- IC Collector-to-Base Voltage, VCB -- V IT11307 f T -- IC Gain-Bandwidth Product, f T -- MHz 3 2 Gain-Bandwidth Product, f T -- MHz 2SA2197 VCE= --10V 5 2SC6102 VCE=10V 3 2 100 7 5 100 7 5 3 2 --0.01 3 2 0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A IT11301 Collector Current, IC -- A IT11308 No. A0463-3/5 2SA2197 / 2SC6102 7 5 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 5 3 2 VCE(sat) -- IC 2SC6102 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SA2197 IC / IB=20 3 2 --0.1 7 5 3 2 Ta= °C --25 °C 75 0.1 7 5 3 2 = Ta °C 75 25 °C -- C 25° °C 25 --0.01 7 --0.1 0.01 7 0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A --1.0 7 --10 IT11302 7 2 3 5 7 1.0 2 3 5 VCE(sat) -- IC Collector Current, IC -- A 1.0 7 7 10 IT11309 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 2SA2197 IC / IB=50 5 3 2 2SC6102 IC / IB=50 C 25° --0.1 7 5 3 2 7 Ta= 5°C 0.1 7 5 3 2 25 °C °C --25 7 Ta= 5°C --25 °C --0.01 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 3 --10 IT11303 7 0.01 0.1 2 3 5 7 1.0 2 3 5 VBE(sat) -- IC Collector Current, IC -- A 3 7 10 IT11310 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 2SA2197 IC / IB=50 2 2SC6102 IC / IB=50 25°C --1.0 7 25°C 1.0 7 Ta= --25°C Ta= --25°C 75°C 5 75°C 5 3 2 --0.1 3 2 0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 2 10 7 5 --10 IT11304 7 2 3 5 7 1.0 2 3 5 ASO Collector Current, IC -- A 1.2 7 10 IT11311 PC -- Ta ICP=9A IC=7A 100ms DC 2SA2197 / 2SC6102 3 2 1.0 7 5 3 2 0.1 7 5 3 2 op era tio Collector Dissipation, PC -- W Collector Current, IC -- A 1m s 10 ms n( 10 0µ s 50 s 0µ 1.0 0.8 DC Tc = op 25 era °C ) No 0.6 he tio at n( sin Ta = k 25 °C 0.4 0.01 0.1 2SA2197 / 2SC6102 Tc=25°C Single pulse For PNP, the minus sign is omitted. 2 3 5 7 1.0 2 3 5 ) 0.2 0 7 10 2 3 5 0 20 40 60 80 100 120 140 160 IT11480 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- °C IT11476 No. A0463-4/5 2SA2197 / 2SC6102 11 10 PC -- Tc 2SA2197 / 2SC6102 Collector Dissipation, PC -- W 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C IT11481 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice. PS No. A0463-5/5