2SA2202

Ordering number : ENA0583 2SA2202 SANYO Semiconductors DATA SHEET 2SA2202 Applications • PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC / DC converters, relay drivers, lamp drivers, motor drivers, flash. Features • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2✕0.8mm) Tc=25°C Conditions Ratings --100 --100 --100 --7 --2 --3 --400 1.3 3.5 150 --55 to +150 Unit V V V V A A mA W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=-80V, IE=0A VEB=-4V, IC=0A VCE=-5V, IC=--100mA VCE=-10V, IC=--500mA VCB=-10V, f=1MHz Ratings min typ max --1 --1 200 300 23 400 MHz pF Unit µA µA Marking : RC Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2706EA TI IM TC-00000421 No. A0583-1/4 2SA2202 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--1A, IB=--100mA IC=--1A, IB=--100mA IC=--10µA, IE=0A IC=--100µA, RBE=0Ω IC=--1mA, RBE=∞ IE=--10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --100 --100 --100 --7 40 600 30 Ratings min typ --120 --0.85 max --240 --1.2 Unit mV V V V V V ns ns ns Package Dimensions unit : mm (typ) 7007A-004 Top View 4.5 1.6 1.5 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR 50Ω RB + 220µF + 470µF VCC= --50V RL IB1 IB2 OUTPUT 2.5 1.0 4.0 VBE=5V IC= --10IB1=10IB2= --0.5A 0.4 1 0.4 0.5 1.5 2 3 3.0 0.75 1 : Base 2 : Collector 3 : Emitter Bottom View SANYO : PCP --2.0 IC -- VCE 2 --1 0 mA --100mA --80mA --60mA --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 IC -- VBE VCE= --5V Collector Current, IC -- A --1.2 --18 --40mA --20mA Ta=75 °C 0m A --0.8 Collector Current, IC -- A --1.6 0m A --1 60 mA --1 4 0m A --0.8 --0.6 --0.4 --0.2 --20 --0.4 IB= --5mA 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 IT11879 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 IT11880 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V --25°C 25°C No. A0583-2/4 2SA2202 1000 7 5 hFE -- IC VCE= --5V --1.0 7 VCE(sat) -- IC IC / IB=10 DC Current Gain, hFE Ta=75°C 25°C --25°C Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 3 2 --0.1 7 5 3 2 25 7 Ta= 5°C °C 100 7 5 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 --25 °C --0.01 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 3 IT11881 2 VBE(sat) -- IC IC / IB=10 Collector Current, IC -- A IT11882 Cob -- VCB f=1MHz Base-to-Emitter Saturation Voltage, VBE(sat) -- V Output Capacitance, Cob -- pF 2 100 7 5 --1.0 7 Ta= --25°C 3 2 75°C 5 25°C 10 7 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT11884 Collector Current, IC -- A 1000 IT11883 5 fT -- IC Collector-to-Base Voltage, VCB -- V ASO Gain-Bandwidth Product, fT -- MHz 7 5 VCE= --10V 3 2 ICP= --3A IC= --2A 100ms DC 10ms 1ms