2SA2205

Ordering number : ENA0544 2SA2205 SANYO Semiconductors DATA SHEET 2SA2205 Applications • PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC / DC converter, Relay drivers, lamp drivers, motor drivers. Features • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings --100 --100 --100 --7 --2 --3 --400 0.8 15 150 --55 to +150 Unit V V V V A A mA W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=-80V, IE=0A VEB=-4V, IC=0A VCE=-5V, IC=--100mA VCE=-10V, IC=--500mA VCB=-10V, f=1MHz Ratings min typ max --1 --1 200 300 20 400 MHz pF Unit µA µA Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806EA SY IM TC-00000309 No. A0544-1/4 2SA2205 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--1A, IB=--100mA IC=--1A, IB=--100mA IC=--10µA, IE=0A IC=--100µA, RBE=0Ω IC=--1mA, RBE=∞ IE=--10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --100 --100 --100 --7 40 600 30 Ratings min typ --120 --0.85 max --240 --1.2 Unit mV V V V V V ns ns ns Package Dimensions unit : mm (typ) 7518-003 6.5 5.0 2.3 1.5 Package Dimensions unit : mm (typ) 7003-003 6.5 5.0 2.3 1.5 0.5 0.5 4 4 7.0 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 to 0.2 1.2 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT 50Ω + 220µF VBE=5V IB1 OUTPUT IB2 VR 1kΩ RL + 470µF VCC= --50V IC= --10IB1=10IB2= --0.5A No. A0544-2/4 2SA2205 --2.0 --1.8 IC -- VCE --1 80 m A --140mA --120mA --100mA --80mA --60mA --40mA --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 IC -- VBE VCE= --5V Collector Current, IC -- A --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --2 0 --160m A --20mA --5mA Collector Current, IC -- A --1.6 0m A C --0.2 --0.4 --0.4 --0.2 IB=0mA --0.05 --0.1 --0.15 --0.2 --0.25 --0.3 --0.35 --0.4 --0.45 --0.5 0 0 Ta=75 ° --0.6 25°C --25°C --0.8 --0.6 --1.0 --1.2 IT11664 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 IT11663 1000 7 hFE -- IC Base-to-Emitter Voltage, VBE -- V fT -- IC VCE= --5V VCE= --10V Gain-Bandwidth Product, fT -- MHz 7 --0.1 2 3 5 7 --1.0 2 3 5 Ta=75°C 25°C 5 3 2 DC Current Gain, hFE 3 2 --25°C 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 100 7 IT11665 5 Collector Current, IC -- A IT11666 Cob -- VCB f=1MHz VCE(sat) -- IC IC / IB=10 Output Capacitance, Cob -- pF 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --0.1 7 5 3 2 10 7 5 3 2 7 Ta= 5°C --25 °C 25°C 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.01 1.0 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT11667 Collector-to-Base Voltage, VCB -- V 2 VBE(sat) -- IC Collector Current, IC -- A 5 IT11668 ASO IC / IB=10 3 2 ICP= --3A IC= --2A 1m