2SA2210_12

Ordering number : ENA0667A 2SA2210 SANYO Semiconductors DATA SHEET 2SA2210 Applications • PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes Low collector-to-emitter saturation voltage • • Large current capacitance High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings --50 --50 -6 --20 --25 -3 2 30 150 --55 to +150 Unit V V V A A A W W °C °C Package Dimensions unit : mm (typ) 7529-002 10.16 3.18 3.3 4.7 2.54 Product & Package Information • Package : TO-220F-3SG • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 6.68 Marking A Electrical Connection 2 15.8 3.23 15.87 1 A2210 2.76 1.47 MAX 0.8 1 2 3 12.98 LOT No. 3 DETAIL-A (0.84) 0.5 FRAME EMC ( 1.0) 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220F-3SG 2.54 2.54 http://semicon.sanyo.com/en/network 21512 TKIM TC-00002708/30707FA TI IM TC-00000565 No. A0667-1/5 2SA2210 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB= --40V, IE=0A VEB= --4V, IC=0A VCE= --2V, IC= --1A VCE= --10V, IC= --1A VCB= --10V, f=1MHz IC= --7A, IB= --350mA IC= --7A, IB= --350mA IC= --100μA, IE=0A IC= --1mA, RBE=∞ IE= --100μA, IC=0A See specified Test Circuit See specified Test Circuit See specified Test Circuit --50 --50 --6 60 270 20 150 140 215 --200 --500 --1.2 Ratings min typ max --10 --10 450 MHz pF mV V V V V ns ns ns Unit μA μA Switching Time Test Circuit PW=20μs D.C.≤1% INPUT VR 50Ω RB + 100μF VBE=5V + 470μF VCC= --20V RL IB1 IB2 OUTPUT IC=20IB1= --20IB2= --7A 0m A --70 Collector Current, IC -- A --14 --12 --10 --8 --6 --4 --2 0 0 Collector Current, IC -- A --16 --8 --7 --6 --5 --4 --3 --2 --1 0mA --4 00m --30 0m A mA A --200m A --20 --18 0 --30 mA --9 0mA --20 IC -- VCE --10 IC -- VCE 0mA --10 A --80m --60mA 00m --9 A 00m A --80 0 -- -mA 600 0mA --40 A m 500 --100mA --40mA --120mA --160mA 40mA --1 --20mA --180mA --10 IB=0mA --0.5 --1.0 --1.5 --2.0 IT12019 --50 0 0 --0.2 --0.4 --0.6 IB=0mA --0.8 --1.0 IT12020 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No. A0667-2/5 2SA2210 --30 IC -- VBE VCE= --2V 1000 7 5 hFE -- IC VCE= --2V --25 Collector Current, IC -- A --20 DC Current Gain, hFE 3 2 Ta=75°C 25°C --25°C --15 100 7 5 3 2 Ta =7 5 °C --10 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IT12021 --25 °C --5 25° C 10 --0.01 2 3 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 5 Base-to-Emitter Voltage, VBE -- V 1000 7 5 Collector Current, IC -- A 1000 7 IT12022 hFE -- IC fT -- IC VCE= --10V Ta=25°C Gain-Bandwidth Product, fT -- MHz 5 5 3 2 DC Current Gain, hFE 3 2 -2. =E VC 100 7 5 3 2 100 7 5 3 2 . --0 2V 0V 5V --0. --1.0V --0.7V 10 --0.01 2 3 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 2 IT12023 --1.0 7 Cob -- VCB Collector Current, IC -- A 5 7 --10 IT12024 VCE(sat) -- IC f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=20 °C Ta = 75 5 Output Capacitance, Cob -- pF 7 5 2 --0.1 7 5 3 2 3 2 100 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --0.01 7 5 --0.01 C Ta= --25° 75°C 25°C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector-to-Base Voltage, VCB -- V 5 3 IT12025 3 VCE(sat) -- IC Collector Current, IC -- A 5 7 --10 23 IT12026 VBE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --1.0 = Ta °C 75 Ta= --25°C 7 5 Ta= --25°C 25°C 2 3 2 --2 C 5° C 5° 75°C 25°C 75°C 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 23 IT12027 3 --0.01 --0.01 2 --0.01 23 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 25 23 5 Collector Current, IC -- A Collector Current, IC -- A No. A0667-3/5 °C IT12028 --2 5° 3 C 1000 2SA2210 5 3 2 Forward Bias A S O ICP= --25A Collector Dissipation, PC -- W IC= --20A 2.5 PC -- Ta Collector Current, IC -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 μs 00 =5 PT 0m 2.0 s DC op 10 m S on ati er 1.5 1m s s /B it m Li 1.0 0.5 --0.01 --0.1 Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 0 0 20 40 60 80 100 120 140 160 IT12029 Collector-to-Emitter Voltage, VCE -- V 35 Ambient Temperature, Ta -- °C IT12030 PC -- Tc 30 Collector Dissipation, PC -- W 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C IT12031 No. A0667-4/5 2SA2210 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2012. Specifications and information herein are subject to change without notice. PS No. A0667-5/5