2SA2222SG

Ordering number : ENA1799 2SA2222SG SANYO Semiconductors DATA SHEET 2SA2222SG Applications • PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Relay drivers, lamp drivers, motor drivers Features • • • • Adoption of MBIT process Large current capacitance (IC=--10A) Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) High-speed switching (tf=22ns(typ.)) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C, PT≤1s Conditions Ratings --50 --50 -6 --10 --13 -2 25 150 --55 to +150 Unit V V V A A A W °C °C Package Dimensions unit : mm (typ) 7529-002 10.16 3.18 3.3 4.7 2.54 Product & Package Information • Package : TO-220F-3SG • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 6.68 Marking A Electrical Connection 2 15.8 3.23 15.87 1 2.76 A2222 SG LOT No. (0.84) 1.47 MAX 0.8 1 2 3 12.98 3 DETAIL-A 0.5 FRAME EMC ( 1.0) 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220F-3SG 2.54 2.54 http://semicon.sanyo.com/en/network 72110FA TK IM TC-00002380 No. A1799-1/4 2SA2222SG Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=--40V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--270mA VCE=--10V, IC=--1A VCB=--10V, f=1MHz IC=--6A, IB=--300mA IC=--6A, IB=--300mA IC=--100μA, IE=0A IC=--1mA, RBE=∞ IE=--100μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --50 --50 --6 40 240 22 150 230 115 --250 --500 --1.2 Ratings min typ max --10 --10 450 MHz pF mV V V V V ns ns ns Unit μA μA Switching Time Test Circuit PW=20μs D.C.≤1% INPUT VR 50Ω RB + 100μF VBE=5V + 470μF VCC= --20V RL IB1 IB2 OUTPUT IC=20IB1= --20IB2= --5A --10 --9 mA IC -- VCE A --100m --90mA A mA 0m --500mA--400 --3 0 --7 0 -- 80mA mA --5.0 IC -- VCE --35m A --30mA Collector Current, IC -- A Collector Current, IC -- A --8 --7 --6 --5 --4 --3 --70mA --60mA --50mA 50 --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 --1 --25mA --20mA --15mA --10mA --5mA --90mA --2 --40mA --30mA --20mA --40m --45m A A --100mA 00mA --6 --50mA 0mA --10mA --2 --1 0 --80m A IB=0mA 0 --1 --2 --3 --4 --5 IT13441 0 IB=0mA 0 --0.5 --1.0 --1.5 --2.0 IT13442 Collector-to-Emitter Voltage, VCE -- V --25 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 1000 hFE -- IC VCE= --2V 7 5 VCE= --2V Ta=75°C Collector Current, IC -- A --20 DC Current Gain, hFE 3 2 25°C --25°C --15 100 7 5 3 2 10 --0.01 2 3 --10 --5 0 0 --0.5 --1.0 25° C --25°C Ta= 75° C --1.5 --2.0 IT13443 5 7--0.1 23 5 7--1.0 23 5 7 --10 23 5 Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A IT13444 No. A1799-2/4 2SA2222SG 7 5 3 hFE -- IC Ta=25°C Gain-Bandwidth Product, fT -- MHz 5 3 2 fT -- IC VCE= --10V = -V CE DC Current Gain, hFE 2 100 7 5 3 2 --0.5 2.0 V --0.2 100 7 5 3 2 V V --0.7V --1.0 V 10 --0.01 2 3 5 7 --0.1 23 5 7--1.0 23 5 7 --10 23 5 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 7 5 Cob -- VCB IT13445 3 2 Collector Current, IC -- A VCE(sat) -- IC 5 7 --10 IT13446 f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=20 Output Capacitance, Cob -- pF 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 7 5 3 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --0.01 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 25 3 5 7 --10 °C 100 C 5° =7 Ta C 5° --2 2 3 Collector-to-Base Voltage, VCB -- V 5 3 VCE(sat) -- IC IT13447 3 Collector Current, IC -- A IT13448 VBE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=20 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --1.0 Ta= --25°C 7 5 Ta= C 75° --2 C 5° 25°C 75°C °C 25 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 IT13449 3 2 --0.01 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 3 2 Forward Bias A S O ICP= --13A 0m Collector Current, IC -- A Collector Current, IC -- A 30 PC -- Tc IT13450 --10 3 2 s Collector Dissipation, PC -- W Collector Current, IC -- A 7 5 IC= --10A 10 25 =5 PT μs 00 1m s 20 1s m 10 --1.0 7 5 3 2 DC 15 P T≤ s tio n era op 1s --0.1 7 5 3 2 10 5 --0.01 --0.1 Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT15773 0 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V Case Temperature, Tc -- °C IT15774 No. A1799-3/4 2SA2222SG Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice. PS No. A1799-4/4