2SB1121

Ordering number : EN1787B 2SB1121 / 2SD1621 SANYO Semiconductors DATA SHEET 2SB1121 / 2SD1621 Applications • PNP / NPN Epitaxial Planar Silicon Transistors High-Current Driver Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • • Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SB1121 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (250mm2✕0.8mm) Conditions Ratings (--)30 (--)25 (--)6 (--)2 (--)5 500 1.3 150 --55 to +150 Unit V V V A A mW W °C °C Marking 2SB1121 : BD 2SD1621 : DD Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’ s products or equipment. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network 31010EA TK IM / O1003TN (KOTO)/92098HA (KT)/4107KI/3045MW, TS No.1787-1/4 2SB1121 / 2SD1621 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)20V, IE=0A VEB=(-)4V, IC=0A VCE=(--)2V, IC=(-)100mA VCE=(--)2V, IC=(--)1.5A VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz IC=(-)1.5A, IB=(-)75mA IC=(-)1.5A, IB=(-)75mA IC=(-)10μA, IE=0A IC=(-)1mA, RBE=∞ IE=(-)10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--)30 (--)25 (--)6 (60)60 (350)550 (25)25 100* 65 150 (32)19 (--0.35)0.18 (--)0.85 (-0.6)0.4 (--)1.2 MHz pF V V V V V ns ns ns Ratings min typ max (--)0.1 (--)0.1 560* Unit μA μA *: The 2SB1121 / 2SD1621 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 140 to 280 200 to 400 U 280 to 560 Package Dimensions unit : mm (typ) 7007B-004 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT IB1 RB IB2 OUTPUT VR 50Ω 24Ω + 100μF --5V + 470μF 12V IC=20IB1= --20IB2=500mA (For PNP, the polarity is reversed) No.1787-2/4 2SB1121 / 2SD1621 --2.0 IC -- VCE 2SB1121 From top --250mA --200mA --150mA --100mA 40m A --4 --5 0m A 0m A Collector Current, IC -- A Collector Current, IC -- A --1.6 0 --2 mA 0 --3 mA 2.0 IC -- VCE 30 mA 20m A 2SD1621 1.6 --1.2 --10mA --8mA --6mA 1.2 10mA 8mA 6mA --0.8 --4mA --2mA 0.8 50mA 4mA 0.4 --0.4 2mA 0 0 --200 --400 --600 IB=0mA --800 --1000 ITR08868 0 0 200 400 600 IB=0mA 800 1000 ITR08869 Collector-to-Emitter Voltage, VCE -- mV 3.2 2.8 IC -- VBE Collector-to-Emitter Voltage, VCE -- mV 1000 7 5 3 hFE -- IC 2SB1121 / 2SD1621 VCE=2V For PNP, minus sign is omitted 2SB1121 / 2SD1621 VCE=2V For PNP, minus sign is omitted Collector Current, IC -- A DC Current Gain, hFE 2.4 2.0 2 100 7 5 3 2 10 7 5 0.01 2SD162 1 2SD162 1 2SB11 1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6 0.8 2SB1 121 21 1.0 1.2 ITR08870 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Base-to-Emitter Voltage, VBE -- V 1000 f T -- IC Collector Current, IC -- A 2 5 7 10 ITR08871 Cob -- VCB Gain-Brandwidth Product, f T -- MHz 7 5 3 2 Output Capacitance, Cob -- pF 2SB1121 / 2SD1621 VCE=10V For PNP, minus sign is omitted 2SD16 21 2SB1121 / 2SD1621 f=1MHz For PNP, minus sign is omitted 100 7 5 2SB 1121 100 7 5 3 2 2SB 3 2 1121 2SD 162 1 10 10 2 3 5 7 100 2 3 5 7 1000 2 3 10 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 10 7 5 ITR08872 10 7 5 3 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V ITR08873 ASO ICP=5A IC=2A DC op Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector Current, IC -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 2SB1121 / 2SD1621 IC / IB=10 For PNP, minus sign is omitted 2SB1121 / 2SD1621 10 2 1.0 7 5 3 2 0.1 7 5 3 10 m 0m s s 1m s era tio n 2S 1 12 B1 2S 6 D1 21 Ta=25°C Single pulse Mounted on a ceramic board (250mm2✕0.8mm) For PNP, minus sign is omitted 3 5 7 1.0 2 3 5 7 10 2 3 5 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A ITR08874 Collector-to-Emitter Voltage, VCE -- V ITR08876 No.1787-3/4 2SB1121 / 2SD1621 1.8 1.6 PC -- Ta 2SB1121 / 2SD1621 Collector Dissipation, PC -- W 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 M ou nte do na ce ram ic bo ard No h (2 eat s 50 ink mm 2 ✕0 .8m m) Ambient Temperature, Ta -- °C ITR08875 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.1787-4/4