2SB1123

Ordering number : EN1727E 2SB1123 / 2SD1623 SANYO Semiconductors DATA SHEET 2SB1123 / 2SD1623 Applications • PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • • Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization. Specifications ( ) : 2SB1123 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (250mm2✕0.8mm) Conditions Ratings (--)60 (--)50 (--)6 (--)2 (--)4 0.5 1.3 150 --55 to +150 Unit V V V A A W W °C °C Marking 2SB1123 : BF 2SD1623 : DF Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 31010EA TK IM / N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS No.1727-1/5 2SB1123 / 2SD1623 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)50V, IE=0A VEB=(-)4V, IC=0A VCE=(--)2V, IC=(-)100mA VCE=(--)2V, IC=(--)1.5A VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz IC=(-)1A, IB=(--)50mA IC=(-)1A, IB=(--)50mA IC=(-)10μA, IE=0A IC=(-)1mA, RBE=∞ IE=(-)10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--)60 (--)50 (--)6 (60)60 (450)550 (30)30 100* 40 150 (22)12 (-0.3)0.15 (--)0.9 (-0.7)0.4 (--)1.2 MHz pF V V V V V ns ns ns Ratings min typ max (--)100 (--)100 560* Unit nA nA *: The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 140 to 280 200 to 400 U 280 to 560 Package Dimensions unit : mm (typ) 7007B-004 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT IB1 RB IB2 OUTPUT VR 50Ω RL=50Ω + 100μF --5V + 470μF 25V IC=10IB1= --10IB2=500mA (For PNP, the polarity is reversed) No.1727-2/5 2SB1123 / 2SD1623 --2.4 IC -- VCE 2SB1123 Pulse --5 2.4 IC -- VCE 50 mA 40m A 2SD1623 Pulse --2.0 Collector Current, IC -- A m --20 --1.6 Collector Current, IC -- A 0m A 2.0 A --10mA 25mA 1.6 15mA 8mA --1.2 --8mA --6mA 1.2 --0.8 --4mA 0.8 4mA 2mA --0.4 --2mA 0.4 0 0 --0.4 --0.8 --1.2 --1.6 IB=0mA --2.0 --2.4 0 0 0.4 0.8 1.2 IB=0mA 1.6 2.0 2.4 ITR08892 Collector-to-Emitter Voltage, VCE -- V --1200 ITR08891 1200 IC -- VCE Collector-to-Emitter Voltage, VCE -- V IC -- VCE --7mA --1000 --6mA 2SB1123 Pulse Collector Current, IC -- mA 1000 7mA 6mA 2SD1623 Pulse 5mA Collector Current, IC -- mA --5mA --800 --4mA --3mA --2mA 800 4mA 3mA --600 600 --400 400 2mA --1mA --200 200 1mA 0 0 --2 --4 --6 --8 IB=0mA --10 --12 ITR08893 0 0 2 4 6 8 IB=0mA 10 12 ITR08894 Collector-to-Emitter Voltage, VCE -- V --1200 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 1200 IC -- VBE 2SB1123 VCE= --2V --1000 1000 2SD1623 VCE=2V Collector Current, IC -- mA Collector Current, IC -- mA --800 800 --600 600 --400 400 --200 200 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ITR08896 Base-to-Emitter Voltage, VBE -- V 1000 7 5 ITR08895 1000 7 5 hFE -- IC Base-to-Emitter Voltage, VBE -- V hFE -- IC 2SB1123 VCE= --2V DC Current Gain, hFE 2SD1623 VCE=2V DC Current Gain, hFE 3 2 3 2 100 7 5 3 2 10 --10 100 7 5 3 2 10 2 3 5 7 --100 2 3 5 7 --1000 2 3 5 10 2 3 5 7 100 2 3 5 7 1000 2 3 5 Collector Current, IC -- mA ITR08897 Collector Current, IC -- mA ITR08898 No.1727-3/5 2SB1123 / 2SD1623 1000 f T -- IC Gain-Bandwidth Product, f T -- MHz 1000 f T -- IC 2SD1623 VCB=10V Gain-Bandwidth Product, f T -- MHz 7 5 3 2 2SB1123 VCB=10V 7 5 3 2 100 7 5 3 2 10 --10 100 7 5 3 2 10 2 3 5 7 --100 2 3 5 7 --1000 2 3 10 2 3 5 7 100 2 3 5 7 1000 2 3 Collector Current, IC -- mA 2 ITR08899 100 Cob -- VCB Collector Current, IC -- mA ITR08900 Cob -- VCB 2SB1123 f=1MHz Output Capacitance, Cob -- pF 100 7 5 7 2SD1623 f=1MHz Output Capacitance, Cob -- pF 5 3 3 2 2 10 7 5 1.0 10 7 5 --1.0 2 3 5 7 --10 2 3 5 7 --100 ITR08901 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V --100 5 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 100 5 7 100 ITR08902 VCE(sat) -- IC 2SB1123 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SD1623 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 --10 5 2 --1.0 5 2 --0.1 5 2 2 10 5 2 1.0 5 2 0.1 5 2 0.01 --0.01 --10 2 3 5 7 --100 2 3 5 7 --1000 2 3 10 2 3 5 7 100 2 3 5 7 1000 2 3 Collector Current, IC -- mA 10 5 3 ITR08903 0.8 ASO Collector Current, IC -- mA ITR08904 PC -- Ta 2SB1123 / 2SD1623 ICP=4A IC=2A 2SB1123 / 2SD1623 Collector Dissipation, PC -- W 1m Collector Current, IC -- A s 2 1.0 5 3 2 0.1 5 3 2 5 0.6 0.5 0.4 s 0m 10 10 ms DC op era tio n No 0.2 he at sin k Ta=25°C Single pulse For PNP, minus sign is omitted Mounted on a ceramic board (250mm2✕0.8mm) 7 1.0 2 3 5 7 10 2 3 5 0 100 ITR08906 7 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- °C IT04221 No.1727-4/5 2SB1123 / 2SD1623 1.6 1.4 PC -- Ta 2SB1123 / 2SD1623 Collector Dissipation, PC -- W 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 M ou nte do na ce ram ic bo ard (2 50 mm 2 ✕0 .8m m) 140 160 40 60 80 100 120 Ambient Temperature, Ta -- °C IT04222 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.1727-5/5