2SB1204

Ordering number:ENN2086B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1204/2SD1804 High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Package Dimensions unit:mm 2045B [2SB1204/2SD1804] 1.5 Features · Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching time. · Small and slim package making it easy to make 2SB1204/2SD1804-applied sets smaller. 6.5 5.0 4 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 1 2 3 0.5 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1204/2SD1804] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 1 0.6 0.5 0.8 2 3 2.5 1.2 0 to 0.2 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo http://semicon.sanyo.com/en/network TOKYO, 110-8534 JAPAN Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO OFFICE Tokyo Bldg., 1-10, 1 1 Chome, Ueno,Taito-ku, TOKYO, 110-8534 JAPAN N2503TN (KT)/92098HA (KT)/8309MO/3117AT, TS No.2086–1/5 2SB1204/2SD1804 ( ) : 2SB1204 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Ratings (–)60 (–)50 (–)6 (–)8 (–)12 1 20 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)0.5A VCE=(–)2V, IC=(–)6A VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz IC=(–)4A, IB=(–)0.2A 70* 35 (130) 180 (95)65 200 (–250) (–)0.95 (–)60 (–)50 (–)6 (50) (450) 500 20 400 (–500) (–)1.3 MHz MHz pF mV mV V V V V ns ns ns ns Conditions Ratings min typ max (–)1 (–)1 400* Unit μA μA VBE(sat) IC=(–)4A, IB=(–)0.2A V(BR)CBO IC=(–)10μA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO ton tstg tf IE=(–)10μA, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit * : The 2SB1204/2SD1804 are classified by 0.5A hFE as follows : Rank hFE Q 70 to 140 R 100 to 200 S 140 to 280 T 200 to 400 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω + 100μF VBE= --5V + 470μF VCC=25V RB RL IC=10IB1= --10IB2=4A (For PNP, the polarity is reversed.) No.2086–2/5 2SB1204/2SD1804 --10 IC -- VCE 2SB1204 From top --160mA --140mA --120mA --100mA 10 IC -- VCE 2SD1804 From top 100mA 90mA 80mA 70mA 60mA Collector Current, IC – A --80mA Collector Current, IC – A --8 8 --6 --60mA 6 50mA 40mA --40mA --4 30mA 4 20mA 10mA --20mA --2 --10mA 2 0 0 --0.4 --0.8 --1.2 IB=0 --1.6 --2.0 ITR09198 0 0 0.4 0.8 1.2 IB=0 1.6 2.0 ITR09199 Collector-to-Emitter Voltage, VCE – V --5 Collector-to-Emitter Voltage, VCE – V 5 IC -- VCE 2SB1204 --30mA --25mA IC -- VCE 30 mA 2SD1804 25mA 20mA Collector Current, IC – A --20mA --3 Collector Current, IC – A --4 4 3 15mA 10mA --15mA --2 --10mA 2 --1 --5mA 1 5mA 0 0 --2 --4 --6 IB=0 --8 --10 ITR09200 0 0 2 4 6 IB=0 8 10 ITR09201 Collector-to-Emitter Voltage, VCE – V --9 --8 Collector-to-Emitter Voltage, VCE – V 9 8 IC -- VBE 2SB1204 VCE= --2V Collector Current, IC – A IC -- VBE 2SD1804 VCE=2V Collector Current, IC – A --7 --6 --5 --4 --3 --2 --1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ITR09203 5°C 25°C --25 °C Base-to-Emitter Voltage, VBE – V 1000 7 5 ITR09202 1000 Base-to-Emitter Voltage, VBE – V hFE -- IC 2SB1204 VCE= --2V hFE -- IC 2SD1804 VCE=2V Ta=75°C 25°C --25°C 7 5 DC Current Gain, hFE 2 DC Current Gain, hFE 3 Ta=75°C 25°C --25°C 3 2 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 5 7 --10 2 ITR09204 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Ta= 75°C 25°C --25° C 2 3 Ta= 7 Collector Current, IC – A 5 7 10 2 ITR09205 No.2086–3/5 C 5 2SB1204/2SD1804 5 C f T -- IC Gain-Bandwidth Product, fT – MHz 2SB1204 VCE= --5V f T -- IC 2SD1804 VCE=5V Gain-Bandwidth Product, fT – MHz 3 2 3 2 100 7 5 3 2 100 7 5 3 2 10 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 Collector Current, IC – A 5 3 2 7 --10 ITR09206 5 3 2 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC – A 5 7 10 ITR09207 Cob -- VCB 2SB1204 f=1MHz Output Capacitance, Cob -- pF Cob -- VCB 2SD1804 f=1MHz Output Capacitance, Cob -- pF 100 7 5 3 2 100 7 5 3 2 10 5 7 --1.0 2 3 5 7 --10 2 3 5 10 Collector-to-Base Voltage, VCB -- V --1000 7 7 --100 ITR09208 1000 7 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 7 100 ITR09209 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE (sat) – mV VCE(sat) -- IC 2SD1804 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 5 3 2 2SB1204 IC / IB=20 5 3 2 --100 7 5 3 2 100 7 5 °C 25 C 75° Ta= °C --25 25 3 2 °C C Ta=75° --25°C 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 ITR09211 --10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 Collector Current, IC – A --10 7 5 7 --10 ITR09210 10 Collector Current, IC – A VBE(sat) -- IC 2SB1204 IC / IB=20 Base-to-Emitter Saturation Voltage, VBE (sat) – V VBE(sat) -- IC 2SD1667 2SD1804 IC / IB=20 7 5 3 2 Base-to-Emitter Saturation Voltage, VBE (sat) – V 5 3 2 --1.0 7 5 3 2 57 --0.01 Ta= --25°C 75°C 25°C 1.0 7 5 3 2 5 7 0.01 Ta= --25°C 75°C 25°C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 5 7 --10 ITR09212 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC – A 5 7 10 ITR09213 No.2086–4/5 2SB1204/2SD1804 2 10 7 5 ASO ICP=12A IC=8A DC 2SB1204 / 2SD1804 10 1m m s s Collector Dissipation, PC – W 10 0m 24 PC -- Ta 2SB1204 / 2SD1804 20 Collector Current, IC – A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 16 DC s op era op tio t era nT a= 12 ion 25 °C 5 =2 Tc °C 8 0.01 0.1 Tc=25°C Single pulse (For PNP, minus sign is omitted.) 2 3 5 7 1.0 2 3 5 7 10 2 3 4 1 0 No heat sink 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE – V 5 7 100 ITR09214 Ambient Temperature, Ta – ˚C ITR09215 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2003. Specifications and information herein are subject to change without notice. PS No.2086–5/5