Ordering number : EN2555B
2SB1302
SANYO Semiconductors
DATA SHEET
2SB1302
Applications
•
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
DC-DC converters, motor drivers, relay drivers, lamp drivers.
Features
• • • • •
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (250mm2✕0.8mm) Conditions Ratings --25 --20 --5 --5 --8 1.3 150 --55 to +150 Unit V V V A A W °C °C
Marking : BJ
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment.
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31710EA TK IM / 10904TN (KT)/O1598HA (KT)/D2680MO/4097TA, TS No.2555-1/4
2SB1302
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=-20V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--500mA VCE=-2V, IC=-4A VCE=-5V, IC=--200mA VCB=-10V, f=1MHz IC=-3A, IB=--60mA IC=-3A, IB=--60mA IC=- μA, IE=0A -10 IC=-1mA, RBE=∞ IE=--10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --25 --20 --5 40 200 10 100* 60 320 60 --250 -1.0 --500 --1.3 MHz pF mV V V V V ns ns ns Ratings min typ max --500 --500 400* Unit nA nA
*: The 2SB1302 is classified by 500mA hFE as follows: Rank R S hFE 100 to 200 140 to 280
T 200 to 400
Package Dimensions
unit : mm (typ) 7007B-004
Switching Time Test Circuit
PW=20μs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω + 100μF VBE=5V + 470μF VCC= --10V RB
RL
IC=10IB1= --10IB2= --2A
No.2555-2/4
2SB1302
--5
IC -- VCE
From top --100mA --90mA --80mA --70mA --60mA
-50mA
--5
IC -- VCE
m --40 A
--35mA --30mA
Collector Current, IC -- A
Collector Current, IC -- A
--4
--40mA
--4
--30mA
--20mA
--25mA
--3
--3
--20mA
--15mA
--2
--2
--10mA
--1
--10mA
--5mA
--1
0 0 --0.2 --0.4 --0.6
IB=0mA
--0.8 --1.0
0 0
IB=0mA
--1 --2 --3 --4 --5 ITR09568
Collector-to-Emitter Voltage, VCE -- V ITR09567
--6
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
1000
hFE -- IC
VCE= --2V
--5
7 5
VCE= --2V
Collector Current, IC -- A
25°C
DC Current Gain, hFE
--4
3 2
Ta=75°C
--3
Ta=75 °C
25°C --25°C
--25°C
100 7 5
--2
--1 3 0 0 2 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 ITR09570
Base-to-Emitter Voltage, VBE -- V
1000
ITR09569 3 2
f T -- IC
Collector Current, IC -- A
Cob -- VCB
VCE= --5V
f=1MHz
Gain-Brandwidth Product, f T -- MHz
7 5
Output Capacitance, Cob -- pF
3 2
100 7 5
100 7 5 3 7--0.01
3 2
10 23 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 3 5
Collector Current, IC -- A
--1000
ITR09571 --10 7 5
VCE(sat) -- IC
7 --10 7 --1.0 2 3 5 Collector-to-Base Voltage, VCB -- V
2
3
ITR09572
VBE(sat) -- IC
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
7 5 3 2
IC / IB=50
IC / IB=50
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
3 2
--100 7 5 3 2
--1.0 7 5
Ta= --25°C
25°C
Ta= --25°C
25°C
7 --0.01 2 3
75°C
75°C
--10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
3
Collector Current, IC -- A
5 7 --10 ITR09573
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
5 7 --10 ITR09574
No.2555-3/4
2SB1302
2 --10 7
ASO
ICP= --8A
1.8 1.4
PC -- Ta
Collector Current, IC -- A
5 3 2 --1.0 7 5 3 2 --0.1 7 5 2
Collector Dissipation, PC -- W
IC= --5A
1.2 1.0 0.8 0.6 0.4 0.2 0 0
M
ou
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ed
s 1m s m 10 ms 0 10
on
DC
ac
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am
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ic
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25
0m
Ta=25°C Single pulse Mounted on a ceramic board (250mm2✕0.8mm)
3 5 7 --1.0 2 3 5 7 --10 2 3
m2 ✕0
.8m
m
)
160
20
40
60
80
100
120
140
Collector-to-Emitter Voltage, VCE -- V
ITR09575
Ambient Temperature, Ta -- °C
ITR09576
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This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice.
PS No.2555-4/4