2SC2362_08

Ordering number : EN0572F 2SA1016, 1016K / 2SC2362, 2362K SANYO Semiconductors DATA SHEET 2SA1016, 1016K 2SC2362, 2362K Specifications ( ) : 2SA1016, 1016K Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp Applications Conditions 2SA1016, 2SC2362 (--)120 (--)100 (--)5 (--)50 (--)100 400 125 --55 to +125 2SA1016K, 2SC2362K (--)150 (--)120 Unit V V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCB=(--)80V, IE=0A VEB=(-)4V, IC=0A VCE=(--)6V, IC=(-)1mA VCE=(--)6V, IC=(-)1mA VCB=(--)10V, f=1MHz IC=(--)10mA, IB=(--)1mA IC=(--)10μA, IE=0A [2SA1016, 2SC2362] IC=(--)10μA, IE=0A [2SA1016K, 2SC2362K] IC=(--)1mA, RBE=∞ [2SA1016, 2SC2362] IC=(--)1mA, RBE=∞ [2SA1016K, 2SC2362K] IE=(-)10μA, IC=0A (--)120 (--)150 (--)100 (--)120 (--)5 160* (110)130 (2.2)1.8 (--)0.5 Ratings min typ max (--)1.0 (--)1.0 960* MHz pF V V V V V V Unit μA μA Continued on next page. * : The 2SA1016,1016K/2SC2362, 2362K are classified by 1mA hFE as follows : Rank F G H hFE 160 to 320 280 to 560 480 to 960 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71608GA TI IM TC-00001502 / 70502TN (KT)/71598HA (KT)/3187AT/3075KI/1313KI No.0572-1/5 2SA1016, 1016K / 2SC2362, 2362K Continued from preceding page. Parameter Noise Level Noise Peak Level Symbol VNO(ave) VNO(peak) Conditions VCC=30V, IC=1mA, Rg=56kΩ,VG=77dB/1kHz VCC=30V, IC=1mA, Rg=56kΩ,VG=77dB/1kHz Ratings min typ max 35 200 Unit mV mV Package Dimensions unit : mm (typ) 7522-002 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 14.0 5.0 0.44 123 1 : Emitter 2 : Collector 3 : Base 1.3 1.3 SANYO : NP --12 IC -- VCE 2SA1016, 1016K --35 0μA 12 IC -- VCE 2SC2362, 2362K --10 10 Collector Current, IC -- mA 0 --30 --8 -- A 250μ μA --200 Collector Current, IC -- mA μA 250μA 200μA 8 --6 A --150μ --100μA 6 150μA --4 4 100μA 50μA --2 --50μA 2 0 0 IB=0μA --10 --20 --30 --40 --50 ITR02951 0 0 10 20 30 IB=0μA 40 50 ITR02952 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No.0572-2/5 2SA1016, 1016K / 2SC2362, 2362K --100 IB -- VBE 2SA1016, 1016K VCE=--5V 100 IB -- VBE 2SC2362, 2362K VCE=5V --80 80 Base Current, IB -- μA Base Current, IB -- μA 0 --0.2 --0.4 --0.6 --0.8 --1.0 ITR02953 --60 60 --40 40 --20 20 0 0 0 0.2 0.4 0.6 0.8 1.0 ITR02954 Base-to-Emitter Voltage, VBE -- V 1000 7 5 3 hFE -- IC Base-to-Emitter Voltage, VBE -- V 1000 hFE -- IC 2SA1016, 1016K VCE=--6V 7 5 2SC2362, 2362K VCE=6V DC Current Gain, hFE 2 100 7 5 3 2 10 7 5 --0.1 DC Current Gain, hFE 2 3 5 2 3 5 2 3 5 3 2 100 7 5 3 2 10 0.1 --1.0 --10 Collector Current, IC -- mA 5 --100 ITR02957 2 3 5 1.0 2 3 5 10 2 3 5 f T -- IC Collector Current, IC -- mA 5 100 2 ITR02958 f T -- IC Gain-Bandwidth Product, f T -- MHz 3 2 Gain-Bandwidth Product, f T -- MHz 2SA1016, 1016K VCE=--6V 3 2 2SC2362, 2362K VCE=6V 100 7 5 100 7 5 3 2 1.0 3 2 1.0 2 3 5 7 10 2 3 5 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 10 7 ITR02955 10 7 Cob -- VCB Collector Current, IC -- mA ITR02956 Cob -- VCB 2SA1016, 1016K f=1MHz 2SC2362, 2362K f=1MHz Output Capacitance, Cob -- pF 5 Output Capacitance, Cob -- pF 2 3 5 7 2 3 5 5 3 3 2 2 1.0 7 --1.0 1.0 7 1.0 --10 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V ITR02959 Collector-to-Base Voltage, VCB -- V 7 100 ITR02960 No.0572-3/5 2SA1016, 1016K / 2SC2362, 2362K 100k 5 Contour of NF 2SA1016, 1016K f=10Hz Δf=1Hz VCE=--6V 4dB NF 500 PC -- Ta d 12 B Signal Source Resistance, Rg -- Ω 3 2 10k 5 3 2 1.0k 5 3 2 Collector Dissipation, PC -- mW 400 15 dB 8dB 6K 01 2K , 1 36 16 , 2 10 2 A 36 2S SC2 2 300 2dB 15 12 dB 6 8d dB B dB 2 4d dB B d =1 B 6dB 200 100 0.1k --0.001 2 3 0 5 --0.01 2 3 5 --0.1 2 3 5 Collector Current, IC -- --1.0 2 3 5 --10 mA ITR02961 100 0 25 50 75 100 125 150 ITR02962 Ambient Temperature, Ta -- °C Contour of NF 100k 5 Contour of NF 5 Signal Source Resistance, Rg -- Ω Signal Source Resistance, Rg -- Ω 3 2 10k 5 3 2 1.0k 5 3 2 2SA1016, 1016K f=100Hz Δf=1Hz VCE=--6V 4dB 3 2 10 5 3 2 1.0 5 3 2SC2362, 2362K VCE=6V f=10Hz dB 14 dB 15 B d 12 8dB B 8d NF 6d NF 6d 8B 12 dB 15 dB dB dB 12 dB =1 2dB B 4d 4d B 2d 1d B .7d =0 1dB B 2d B B B 2d B 4d B 6dB 12 14 6d 8d B B dB 2 5 --0.1 2 3 5 --1.0 2 3 5 --10 ITR02963 dB 0.1k --0.001 2 3 5 --0.01 2 3 0.1 1.0 23 5 10 23 5 100 2 3 5 Collector Current, IC -- mA Collector Current, IC -- μA 1000 2 3 5 10000 ITR02964 Contour of NF 100k 5 100 Contour of NF 5 Signal Source Resistance, Rg -- Ω Signal Source Resistance, Rg -- Ω 3 2 10k 5 3 2 1.0k 5 3 2 2SA1016, 1016K f=1kHz Δf=1Hz VCE=--6V 1dB dB 0.7 3 2 10 5 3 2 1.0 5 3 2 0.1 2SC2362, 2362K f=1kHz VCE=6V dB 15 8d 12 4dB B 2d 6dB B B 6d B 4d dB B 8d NF d =1 B 2d B 0.7 1d B 2d B dB NF =1 dB 4d 2 B dB 6d B 12 8dB dB 14 dB 23 5 10 23 5 100 23 4d B 6 8d dB B 15 dB dB 12 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 ITR02965 0.1k --0.001 2 3 1.0 Collector Current, IC -- mA Collector Current, IC -- μA 5 1000 2 3 5 10000 ITR02966 Contour of NF 100k 5 Signal Source Resistance, Rg -- Ω 3 2 10k 5 3 2 1.0k 5 3 2 2SA1016, 1016K f=10kHz Δf=1Hz VCE=--6V dB 15 dB 12 B 8d 0. 2d .5 =0 NF 4dB 2dB 1dB dB 0.7 1d B 7d B dB 6dB 4d B 6d B 8d B B 12 dB 0.1k --0.001 2 3 dB 15 5 --0.01 2 3 5 --0.1 2 3 5 Collector Current, IC -- mA --1.0 2 3 5 --10 ITR02967 No.0572-4/5 2SA1016, 1016K / 2SC2362, 2362K SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No.0572-5/5