2SC2812N

Ordering number : EN7198A 2SA1179N / 2SC2812N SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179N / 2SC2812N Features • • Low-Frequency General-Purpose Amp Applications Miniature package facilitates miniaturization in end products. High breakdown voltage. Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings (--)55 (--)50 (-)5 (-)150 (-)300 (--)30 200 150 --55 to +150 Unit V V V mA mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCB=(--)35V, IE=0A VEB=(--)4V, IC=0A VCE=(--)6V, IC=(--)1mA 2SC2812N : VCE=6V, IC=1mA 2SA1179N : VCE=-6V, IC=--10mA VCB=(--)6V, f=1MHz IC=(--)50mA, IB=(--)5mA IC=(--)50mA, IB=(--)5mA IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0A (-)55 (-)50 (--)5 Ratings min typ max (--)0.1 (--)0.1 200 100 (180) (4.0)3.0 (-0.15)0.1 (--)0.5 (--)1.0 400 MHz MHz pF V V V V V Unit µA µA Marking : 2SA1179N : M / 2SC2812N : L * : The 2SA1179N / 2SC2812N are classified by 1mA hFE as follws: Rank 6 hFE 200 to 400 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92006 MS IM TC-00000143,00000144 / 72602 TS IM TA-2636, 2637 No.7198-1/4 2SA1179N / 2SC2812N Package Dimensions unit : mm (typ) 7053-001 0.45 0.13 3 1.3 2.4 0.55 0 to 0.1 0.95 1.9 2.93 0.55 1 2 1.3 MAX 1 : Base 2 : Emitter 3 : Collector 1.0 SANYO : CPA --16 IC -- VCE 2SA1179N Collector Current, IC -- mA 0.2 MIN 20 IC -- VCE 50µA 45µA 2SC2812N Collector Current, IC -- mA --12 --8 µA --50 A --45µ A --40µ A --35µ 30µA ---25µA 16 40µA 35µA 12 30µA 25µA --20µA --15µA 8 20µA --4 --10µA 15µA 4 --5µA 0 0 --10 --20 --30 10µA 5µA IB=0µA 40 50 IT04196 IB=0µA --40 --50 IT04195 0 0 10 20 30 Collector-to-Emitter Voltage, VCE -- V --240 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 240 IC -- VBE 2SA1179N VCE= --6V --200 200 2SC2812N VCE=6V Collector Current, IC -- mA Collector Current, IC -- mA --160 160 Ta=75° C 25°C --120 120 --80 80 --40 40 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT04197 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT04198 Base-to-Emitter Voltage, VBE -- V Base-to-Emitter Voltage, VBE -- V Ta=75° C 25°C --25°C --25°C No.7198-2/4 2SA1179N / 2SC2812N 1000 7 5 hFE -- IC 2SA1179N VCE= --6V 1000 hFE -- IC 2SC2812N VCE=6V 7 DC Current Gain, hFE DC Current Gain, hFE 3 2 Ta=75°C 25°C --25°C 5 Ta=75°C 25°C --25°C 3 2 100 7 5 --0.1 100 0.1 23 5 7 --1.0 23 5 7 --10 23 Collector Current, IC -- mA 7 5 7--100 2 3 IT04199 2 3 5 7 1.0 2 3 5 7 10 2 3 f T -- IC Collector Current, IC -- mA 7 5 7 100 2 3 IT04200 f T -- IC Gain-Bandwidth Product, f T -- MHz 3 Gain-Bandwidth Product, f T -- MHz 5 2SA1179N VCE= --6V 5 2SC2812N VCE=6V 3 2 2 100 7 5 100 7 5 3 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 3 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 2 IT04201 2 Cob -- VCB Collector Current, IC -- mA IT04202 Cob -- VCB 2SA1179N f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 10 7 5 10 7 5 2SC2812N f=1MHz 3 2 3 2 1.0 7 5 1.0 7 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT04203 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 5 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 5 7 100 IT04204 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SA1179N IC / IB= --10 3 2 2SC2812N IC / IB=10 0.1 7 5 3 2 --0.1 7 5 3 2 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 0.01 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 Collector Current, IC -- mA IT04205 Collector Current, IC -- mA IT04206 No.7198-3/4 2SA1179N / 2SC2812N 7 5 3 ASO ICP=0.3A IC=0.15A DC 250 PC -- Ta 10µs Collector Dissipation, PC -- mW 100µs s 1m 200 Collector Current, IC -- A 2 0.1 7 5 3 2 0.01 7 5 3 2 10 m s 10 0m op er ati on 150 0.001 0.1 Ta=25°C Mounted on a glass epoxy board (20!30!1.6mm) For PNP, the minus sign is omitted. 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice. PS No.7198-4/4 s 5 7 100 IT04207 100 50 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT04208