2SC3332_11

Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. Package Dimensions unit:mm 2003B [2SA1319/2SC3332] 5.0 4.0 4.0 Switching Test Circuit PW=20μs D.C.≤1% INPUT VR 50Ω + 100μF --5V + 470μF 100V 20IB1=--20IB2=IC=300mA (For PNP, the polarity is reversed.) 1.3 1.3 IB1 RB IB2 OUTPUT 0.45 0.5 RL 333Ω 0.6 2.0 5.0 0.45 0.44 14.0 1 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : NP ( ) : 2SA1319 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)180 (–)160 (–)6 (–)0.7 (–)1.5 700 150 –55 to +150 Unit V V V A A mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)10mA 100* 80 Conditions Ratings min typ max (–)0.1 (–)0.1 400* Unit μA μA * : The 2SA1319/2SC3332 are classified by 100mA hFE as follows : Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83002TN (KT)/71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/4 2SA1319/2SC3332 Continued from preceding page. Parameter Gain Bandwidth Product Common Base Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT C ob VCE(sat) Conditions VCE=(–)10V, IC=(–)50mA VCB=(–)10V IC=(–)250mA, IB=(–)25mA (–)180 (–)160 (–)6 (60)50 (900) 1000 (60)60 Ratings min typ 120 (11)8 (0.20) 0.12 (–)0.85 (0.5) 0.4 (–)1.2 max Unit MHz pF V V V V V ns ns ns VBE(sat) IC=(–)250mA, IB=(–)25mA V(BR)CBO IC=(–)10μA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO ton tstg tf IE=(–)10μA, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit --800 --700 IC -- VCE From top --200mA --180mA --160mA --140mA 2SA1319 Pulse 800 700 IC -- VCE From top 100mA 90mA 80mA 70mA 60mA 2SC3332 Pulse 50m A Collector Current, IC – mA Collector Current, IC – mA --600 --500 --400 --300 --200 --100 0 0 --120mA --80mA --60mA --40mA --20mA 600 500 400 300 200 100 40mA 30mA 20mA 10mA --0.2 --0.4 --0.6 --0.8 Collector-to-Emitter Voltage, VCE – V IB=0 --1.0 ITR03218 0 IB=0 0 0.2 0.4 0.6 0.8 1.0 ITR03219 --800 --700 IC -- VCE --5.0mA --4.5mA --4.0mA --3.5mA Collector-to-Emitter Voltage, VCE – V 1000 IC -- VCE 2SA1319 Pulse Collector Current, IC – mA --600 --500 --400 --300 --200 --100 0 0 --3.0mA --2.5mA --2.0mA Collector Current, IC – mA 800 4.0mA 3.5mA 3.0mA 2.5mA 2SC3332 Pulse 600 2.0mA 400 --1.5mA --1.0mA --0.5mA 1.5mA 1.0mA 200 0.5mA 0 IB=0 --10 --20 --30 --40 --50 --60 --70 --80 Collector-to-Emitter Voltage, VCE – V ITR03220 IB=0 0 10 20 30 40 50 60 70 80 Collector-to-Emitter Voltage, VCE – V Common Base Output Capacitance, Cob – pF 100 7 5 3 2 ITR03221 1000 IC -- VBE VCE=5V Cob -- VCB Collector Current, IC – mA 800 332 2SA 1319 2SC3 600 10 7 5 3 2 2SA 131 9 2SC 333 2 400 200 0 For PNP, minus sign is omitted. 0 0.2 0.4 0.6 0.8 1.0 1.2 ITR03222 1.0 5 7 1.0 2 3 5 7 10 2 3 5 7 Base-to-Emitter Voltage, VBE – V Collector-to-Base Voltage, VCB -- V 2 100 ITR03223 No.1334-2/4 BE 1000 7 5 3 2SA1319/2SC3332 2SA1319 Pulse 1000 7 5 3 g hFE -- IC hFE -- IC CB 2SC3332 Pulse DC Current Gain, hFE DC Current Gain, hFE 2 2 10V 100 7 5 3 2 10 7 5 3 3 57 100 7 5 3 2 10 7 5 VC --10 2 3 3 5 7 --100 2 Collector Current, IC – mA 5 fT -- IC 2SA1319 VC =-E 2V --10V 5 7 --1000 2 ITR03224 5V =2 E --5V V 3 3 5 7 10 2 3 5 7 100 2 3 5 Collector Current, IC – mA 5 7 1000 2 ITR03225 fT -- IC 2SC3332 Gain-Bandwidth Product, fT – MHz 3 2 Gain-Bandwidth Product, fT – MHz 3 2 VC E =10 V V V CE=10 5V 100 7 5 3 2 5V 100 7 5 3 2 10 5 7 --10 2 3 5 7 --100 2 Collector Current, IC – mA 3 5 7 --1000 10 5 7 10 2 3 5 7 100 2 3 5 ITR03226 5 Collector Current, IC – mA 7 1000 ITR03227 10 5 VCE(sat) -- IC IC / IB=10 ASO ICP Ta=25°C Single pulse 3 2 Collector-to-Emitter Saturation Voltage, VCE (sat) – V 2 1.0 5 Collector Current, IC – mA 3 1000 5 3 2 100 5 3 2 10 5 3 1.0 2 3 5 7 10 10 1m 10 s ms 0m s 2S A1 31 9 3 2 0.1 5 3 2 3 5 7 10 2 3 DC op era tio n 2S 3 C3 32 For PNP, minus sign is omitted. 5 Collector Current, IC – mA 7 100 2 3 5 7 1000 2 ITR03228 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE – V ITR03229 800 PC -- Ta Collector Dissipation, PC – mW 600 400 200 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C ITR03230 No.1334-3/4 2SA1319/2SC3332 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. PS No.1334-4/4