2SC3646

Ordering number : EN2005B 2SA1416 / 2SC3646 SANYO Semiconductors DATA SHEET 2SA1416 / 2SC3646 Features • • • • PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SA1416 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (250mm2✕0.8mm) Conditions Ratings (--)120 (--)100 (--)6 (--)1 (--)2 500 1.3 150 --55 to +150 Unit V V V A A mW W °C °C Marking 2SA1416 : AB 2SC3646 : CB Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 31010EA TK IM / O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/5 2SA1416 / 2SC3646 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)100V, IE=0A VEB=(-)4V, IC=0A VCE=(--)5V, IC=(-)100mA VCE=(--)10V, IC=(-)100mA VCB=(--)10V, f=1MHz IC=(-)400mA, IB=(-)40mA IC=(-)400mA, IB=(-)40mA IC=(-)10μA, IE=0A IC=(-)1mA, RBE=∞ IE=(-)10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--)120 (--)100 (--)6 (80)80 (700)850 (40)50 100* 120 (13)8.5 (-0.2)0.1 (--)0.85 (-0.6)0.4 (--)1.2 Ratings min typ max (--)100 (--)100 400* MHz pF V V V V V ns ns ns Unit nA nA *: The 2SA1416 / 2SC3646 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 140 to 280 200 to 400 Package Dimensions unit : mm (typ) 7007B-004 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT VR 50Ω + 100μF --5V + 470μF 50V IB1 IB2 RB RL IC=10IB1=--10IB2=400mA (For PNP, the polarity is reversed) No.2005-2/5 2SA1416 / 2SC3646 --1.0 IC -- VCE 2SA1416 5m A A 0m --3 1.0 IC -- VCE 2SC3646 A 30m 25m -- A 15m --10m A A 20mA 15mA 10mA 5mA Collector Current, IC -- A A 0m --2 --0.6 --5mA Collector Current, IC -- A --0.8 --2 0.8 0.6 --3mA --0.4 3mA 0.4 2mA --2mA --1mA --0.2 0.2 1mA 0 0 IB=0mA --1 --2 --3 --4 --5 ITR03526 0 IB=0mA 0 1 2 3 4 5 ITR03527 Collector-to-Emitter Voltage, VCE -- V --500 IC -- VCE --2.0m Collector-to-Emitter Voltage, VCE -- V 500 IC -- VCE 2.0mA A Collector Current, IC -- mA Collector Current, IC -- mA --400 400 2.5 mA --2.5 mA 2SA1416 2SC3646 --1.5mA --300 1.5mA 300 --1.0mA --200 1.0mA 200 --0.5mA --100 0.5mA 100 0 0 IB=0mA --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V --50 ITR03528 0 IB=0mA 0 10 20 30 40 50 ITR03529 --1.2 --1.0 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 1.2 IC -- VBE 2SA1416 VCE=--5V 1.0 2SC3646 VCE=5V Collector Current, IC -- A Collector Current, IC -- A --0.8 --0.6 0.8 0.6 Ta=7 5 °C 25°C --25°C --0.2 0 0.2 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V ITR03530 0 0 0.2 0.4 0.6 Ta=7 5 --0.4 0.4 °C 25°C --25°C 0.8 1.0 1.2 ITR03531 1000 7 5 hFE -- IC Base-to-Emitter Voltage, VBE -- V 1000 7 5 hFE -- IC 2SA1416 VCE=--5V Ta=75° C 2SC3646 VCE=5V Ta=75°C DC Current Gain, hFE DC Current Gain, hFE 3 2 3 2 25°C 100 7 5 3 2 --25°C 100 7 5 3 2 25°C --25°C 10 7 --0.01 2 3 2 3 5 5 7 --0.1 Collector Current, IC -- A 7 --1.0 2 3 10 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 ITR03532 Collector Current, IC -- A ITR03533 No.2005-3/5 2SA1416 / 2SC3646 3 f T -- IC 2SA1416 / 2SC3646 VCE=10V 100 7 Cob -- VCB 2SA1416 / 2SC3646 f=1MHz Gain-Bandwidth Product, f T -- MHz 2 2SA1416 100 7 5 Output Capacitance, Cob -- pF 5 3 2 2SC3646 2SA 10 7 5 3 141 6 3 2 2SC 364 6 For PNP, minus sign is omitted 10 7 0.01 2 3 5 7 0.1 2 3 5 For PNP, minus sign is omitted 2 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- A --1000 7 1.0 ITR03538 1000 7 7 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 7 100 2 ITR03539 VCE(sat) -- IC 2SA1416 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SC3646 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 5 3 2 3 2 --100 7 5 3 2 100 7 5 3 2 7 Ta= 5°C --25°C 25°C Ta=75°C 25°C 7 0.01 2 3 5 7 0.1 2 --25°C 3 5 7 1.0 2 ITR03537 7 --0.01 2 3 2 3 --0.1 Collector Current, IC -- A 5 7 5 7 --1.0 2 ITR03536 10 7 --10 7 VBE(sat) -- IC Collector Current, IC -- A VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SA1416 IC / IB=10 2SC3646 IC / IB=10 5 5 3 2 3 2 --1.0 7 5 Ta=--25°C 1.0 7 5 Ta=--25°C 25°C 75°C 5 7 25°C 7 0.01 2 3 5 75°C 7 0.1 2 3 5 7 2 1.0 ITR03535 3 7 --0.01 2 3 5 7 --0.1 2 3 Collector Current, IC -- A --1.0 2 3 ITR03534 1.6 1.4 Collector Current, IC -- A ASO 5 3 2 PC -- Ta 2SA1416 / 2SC3646 ICP=2A IC=1A DC Collector Dissipation, PC -- W Collector Current, IC -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 10 op era 0m s 10 1ms ms 1.3 1.2 1.0 0.8 0.6 0.5 0.4 0.2 0 M ou nt ed on ac tio er n am ic bo ar d( No h 25 For PNP, minus sign is omitted 2SA1416 / 2SC3646 Single pulse Ta=25°C Mounted on a ceramic board (250mm2✕0.8mm) 5 7 1.0 2 3 5 7 10 2 3 5 eat s 0m ink m2 ✕ 0.8 m m ) 160 Collector-to-Emitter Voltage, VCE -- 2 7 100 V ITR03540 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C ITR03541 No.2005-4/5 2SA1416 / 2SC3646 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.2005-5/5