2SC3647

Ordering number : EN2006C 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 Features • • • High-Voltage Switching Applications Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs. Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (250mm2!0.8mm) Conditions Ratings (-)120 (-)100 (-)6 (-)2 (-)3 500 1.5 150 --55 to +150 Unit V V V A A mW W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Conditions VCB=(--)100V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(-)100mA VCE=(--)10V, IC=(--)100mA VCB=(--)10V, f=1MHz IC=(--)1A, IB=(-)100mA IC=(--)1A, IB=(-)100mA Ratings min typ max (--)100 (--)100 100* 120 (25)16 (--0.22)0.13 (--)0.85 (-0.6)0.4 (--)1.2 400* MHz pF V V Unit nA nA Continued on next page. * ; The 2SA1417 / 2S3647 are classified by 100mA hFE as follws: Rank R S T hFE 100 to 200 140 to 280 200 to 400 Marking 2SA1417: AC 2SC3647: CC Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 22006EA MS IM / O3103TN (KT) / 71598HA (KT) / 3277KI / N255MW, TS No.2006-1/5 2SA1417 / 2SC3647 Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min (--)120 (--)100 (--)6 (80)80 (750)1000 (40)50 typ max Unit V V V ns ns ns Package Dimensions unit : mm 7007A-004 Top View 4.5 1.6 1.5 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω RB + 100µF VBE= --5V + 470µF VCC=50V RL 2.5 1 0.4 0.5 1.5 2 3 0.4 1.0 4.0 10IB1= --10IB2=IC=0.7A For PNP, the polarity is reversed. 3.0 0.75 1 : Base 2 : Collector 3 : Emitter Bottom View SANYO : PCP --2.0 IC -- VCE 2SA1417 A A 0m 0m --4 --3 A --20m 2.0 IC -- VCE 2SC3647 50m A 40mA 30mA 20mA Collector Current, IC -- A --1.2 --10mA Collector Current, IC -- A --1.6 1.6 1.2 10mA 5mA 0.8 --0.8 --5mA --3mA --0.4 3mA 0.4 --2mA --1mA 2mA 1mA 0 --5 0 1 2 3 4 0 0 IB=0mA --1 --2 --3 --4 IB=0mA 5 ITR03543 Collector-to-Emitter Voltage, VCE -- V ITR03542 Collector-to-Emitter Voltage, VCE -- V No.2006-2/5 2SA1417 / 2SC3647 --1.0 IC -- VCE --6 mA --5m A 1.0 IC -- VCE 5.0 mA 4. 5mA 2SC3647 4.0mA 2SA1417 0.8 Collector Current, IC -- A Collector Current, IC -- A --0.8 --4mA --3mA 3.5mA 3.0mA --0.6 0.6 2.5mA 2.0mA --2mA --0.4 0.4 1.5mA --1mA --0.2 1.0mA 0.2 0.5mA 0 0 IB=0mA --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V --50 ITR03544 0 0 10 20 30 IB=0mA 40 50 ITR03545 --2.4 --2.0 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 2.4 IC -- VBE 2SA1417 VCE= --5V 2.0 2SC3647 VCE=5V Collector Current, IC -- A --1.6 --1.2 Collector Current, IC -- A 1.6 1.2 Ta=7 5 °C 25°C --25°C --0.4 0 0 0.4 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V ITR03546 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ITR03547 Base-to-Emitter Voltage, VBE -- V 1000 7 5 1000 7 5 hFE -- IC 2SA1417 VCE= --5V hFE -- IC 2SC3647 VCE=5V DC Current Gain, hFE 3 2 Ta=75°C DC Current Gain, hFE 3 2 25°C --25°C Ta=75°C 25°C --25°C 100 7 5 3 100 7 5 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 --7--0.01 --2 --3 --5 --7 --0.1 --2 --3 --5 --7 --1.0 Collector Current, IC -- A --2 --3 ITR03548 3 f T -- IC Collector Current, IC -- A 100 7 Ta=7 5 --0.8 0.8 °C 25°C --25°C ITR03549 Cob -- VCB Gain-Bandwidth Product, f T -- MHz 2 2SA1417 / 2SC3647 VCE=10V Output Capacitance, Cob -- pF 2SA1417 / 2SC3647 f=1MHz 5 100 7 5 1 2SA 417 7 364 2SA 3 2 2SC 141 7 7 2SC 364 3 2 10 7 5 10 For PNP minus sign is omitted. 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 3 7 For PNP minus sign is omitted. 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- A ITR03550 Collector-to-Base Voltage, VCB -- V 7 100 2 ITR03551 No.2006-3/5 2SA1417 / 2SC3647 --1000 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SA1417 IC / IB=10 1000 7 5 3 2 VCE(sat) -- IC 2SC3647 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 3 2 --100 7 5 3 2 100 7 5 3 2 75° Ta= C C 25° 25°C Tc=75°C --25°C --25°C 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 --10 7 10 --0.01 2 3 --0.1 2 3 5 Collector Current, IC -- A 5 7 7 --1.0 2 3 ITR03552 10 7 --10 7 VBE(sat) -- IC Collector Current, IC -- A ITR03553 VBE(sat) -- IC 2SA1417 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SC3647 IC / IB=10 5 5 3 2 3 2 --1.0 7 5 3 7 --0.01 Ta= --25°C 25°C 1.0 7 5 3 Ta= --25°C 25°C 75°C 2 3 2 3 5 --0.1 Collector Current, IC -- A 5 7 7 75°C 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 --1.0 2 3 ITR03554 1.8 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.5 0.4 0.2 0 0 20 5 3 2 ASO Collector Current, IC -- A ITR03555 PC -- Ta ICP=3A IC=2A Collector Dissipation, PC -- W Collector Current, IC -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 5 1m 2SA1417 / 2SC3647 10 s m s 10 0m s 2SA1417 / 2SC3647 M ou nt DC ed op on era ac tio er n am ic bo ar d( 25 0m For PNP minus sign is omitted. Ta=25°C Single pulse Mounted on a ceramic board (250mm2!0.8mm) 7 1.0 2 3 5 7 10 2 3 5 Infin m2 ! ite h eat s 0.8 ink m m ) Collector-to-Emitter Voltage, VCE -- 7 100 2 V ITR03556 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT10757 No.2006-4/5 2SA1417 / 2SC3647 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2006. Specifications and information herein are subject to change without notice. PS No.2006-5/5