2SC4853A

Ordering number : ENA1076 2SC4853A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Features • Low-Voltage, Low-Current High-Frequency Amplifier Applications Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) :⏐S21e⏐2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 12 6 1.5 15 90 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE VCB=5V, IE=0A VEB=1V, IC=0A VCE=1V, IC=1mA 60* Conditions Ratings min typ max 1.0 10 270* Unit μA μA * : The 2SC4853A is classified by 1mA hFE as follows : Marking Rank hFE CN3 3 60 to 120 CN4 4 90 to 180 CN5 5 135 to 270 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network D2408AB MS IM TC-00001797 No. A1076-1/5 2SC4853A Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Symbol fT Cob 2 ⏐S21e⏐ 1 S21e⏐22 ⏐ Conditions VCE=1V, IC=1mA VCB=1V, f=1MHz VCE=1V, IC=1mA, f=1GHz VCE=2V, IC=3mA, f=1GHz VCE=1V, IC=1mA, f=1GHz VCE=2V, IC=3mA, f=1GHz Ratings min typ 5 0.6 4.5 7 10.5 2.6 1.9 4.5 1.0 max Unit GHz pF dB dB dB dB NF1 NF2 Package Dimensions unit : mm (typ) 7023-009 0.425 3 1.25 2.1 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 1 : Base 2 : Emitter 3 : Collector SANYO : MCP 20 18 IC -- VCE 0.2 0.3 0.15 1000 7 5 hFE -- IC Collector Current, IC -- mA 16 14 12 10 8 6 4 2 0 0 1 2 105μA 90μA 75μA 60μA DC Current Gain, hFE 150μA 120μA 135μA 3 2 100 7 5 3 2 10 0.1 VCE=2V 1V 45μA 30μA 15μA IB=0μA 3 4 5 6 IT14232 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 2 Collector Current, IC -- mA 2 IT14233 fT -- IC Cob -- VCB f=1MHz Gain-Bandwidth Product, fT -- GHz Output Capacitance, Cob -- pF 10 7 1.0 7 5 VC 5 3 =2 E V 1V 2 3 2 1.0 7 5 3 2 0.1 7 3 5 7 1.0 2 3 5 7 Collector Current, IC -- mA 2 10 ITR07582 5 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector-to-Base Voltage, VCB -- V 7 10 2 ITR07583 No. A1076-2/5 2SC4853A 10 NF -- IC f=1GHz 14 ⏐S21e⏐2 -- IC f=1GHz Forward Transfer Gain,⏐S21e⏐2 -- dB 12 8 Noise Figure, NF -- dB 10 VC =2 E V 1V 6 8 4 6 V CE =1 V 4 2 2V 2 0 0 2 3 5 7 1.0 2 3 5 7 10 2 ITR07585 100 90 2 3 5 7 1.0 2 3 5 7 14 Collector Current, IC -- mA ⏐S21e⏐2, NF -- V Collector Current, IC -- mA ITR07584 CE f=1GHz PC -- Ta Collector Dissipation, PC -- mW 6 7 12 IC=3mA 2 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 ⏐S21e⏐2, NF -- dB 10 ⏐S21e⏐ 8 1mA 6 4 NF 2 IC=1mA 3mA 0 0 1 2 3 4 5 Collector-to-Emitter Voltage, VCE -- V ITR07586 Ambient Temperature, Ta -- °C IT14234 No. A1076-3/5 2SC4853A S Parameters S11e f=200MHz to 2000MHz(200MHz Step) j50 j25 j100 j150 j10 j200 j250 150° G 0.2 S21e f=200MHz to 2000MHz(200MHz Step) 90° 120° 60° Hz VCE=2V IC=3mA V =1 V CE 1mA I C= z H 2G 0. 30° 0 10 25 50 100 150 250 ±180° 2.0 GH 2 z 4 6 8 0 2.0GH z --j10 VCE=2V IC=3mA V C IC = E =1V 1m A 0.2GHz --j250 --j200 --j150 --150° --30° --j25 --j50 --j100 --120° ITR07588 --60° --90° ITR07589 S12e f=200MHz to 2000MHz(200MHz Step) 90° 120° V =1 V CE 1mA = IC S22e f=200MHz to 2000MHz(200MHz Step) 60° 2.0 GH j50 j25 z j100 j150 150° 30° j10 V =2 A CE=3m V IC 0 j200 j250 0. 2G Hz ±180° 0.05 0.10 0.15 0.20 0 0.2 0.5 10 20 100 Hz --150° --30° --j25 ITR07590 2.0G --j10 VCE=2V IC=3mA G 0.2 Hz VCE=1V IC=1mA --j100 --j250 --j200 --j150 --120° --90° --60° --j50 ITR07591 No. A1076-4/5 2SC4853A S Parameters (Common emitter) VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.940 0.863 0.778 0.698 0.608 0.546 0.470 0.418 0.388 0.354 ∠S11 --17.9 --33.7 --48.0 --60.5 --73.5 --84.7 --96.2 --106.4 --117.3 --127.0 ⏐S21⏐ 3.228 2.983 2.732 2.469 2.320 2.106 1.977 1.826 1.700 1.615 ∠S21 159.6 143.7 129.9 117.7 106.2 96.3 87.1 78.8 72.2 65.9 ⏐S12⏐ 0.058 0.107 0.145 0.173 0.195 0.210 0.129 0.224 0.230 0.234 ∠S12 77.1 66.6 58.1 50.9 45.4 40.9 37.6 35.3 33.8 32.9 ⏐S22⏐ 0.972 0.914 0.844 0.773 0.717 0.668 0.624 0.590 0.562 0.546 ∠S22 --12.2 --22.7 --31.7 --39.6 --46.0 --51.7 --56.5 --60.6 --64.3 --67.5 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.839 0.672 0.536 0.431 0.360 0.310 0.265 0.242 0.228 0.217 ∠S11 --30.6 --53.7 --71.7 --85.7 --99.0 --111.4 --122.6 --134.7 --148.0 --157.2 ⏐S21⏐ 7.428 6.016 4.908 4.073 3.494 3.033 2.694 2.422 2.205 2.061 ∠S21 149.3 128.5 113.6 101.9 92.7 84.4 77.4 70.9 65.9 60.8 ⏐S12⏐ 0.050 0.083 0.105 0.121 0.135 0.150 0.162 0.175 0.189 0.205 ∠S12 71.4 60.6 55.1 52.5 51.4 50.9 50.9 51.0 51.1 51.0 ⏐S22⏐ 0.916 0.778 0.672 0.597 0.548 0.514 0.492 0.475 0.461 0.456 ∠S22 --18.3 --30.2 --37.1 --41.9 --45.7 --49.2 --52.3 --55.6 --59.0 --61.8 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice. PS No. A1076-5/5