2SC5227A

Ordering number : ENA1063 2SC5227A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5227A Features • • • VHF to UHF Wide-Band Low-Noise Amplifier Applications Low-noise : NF=1.0dB typ (f=1GHz). High gain : ⏐S21e⏐2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 2 70 200 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=20mA 60* Conditions Ratings min typ max 1.0 10 270* Unit μA μA Continued on next page. * : The 2SC5227A is classified by 20mA hFE as follows : Marking LN3 LN4 LN5 Rank 3 4 5 hFE 60 to 120 90 to 180 135 to 270 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408AB TI IM TC-00001342 No. A1063-1/6 2SC5227A Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol fT Cob Cre 2 ⏐S21e⏐ 1 2 ⏐S21e⏐ 2 Conditions VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=2V, IC=3mA, f=1GHz VCE=5V, IC=7mA, f=1GHz Ratings min 5 typ 7 0.75 0.5 9 12 8 1.0 1.8 1.2 max Unit GHz pF pF dB dB dB NF Package Dimensions unit : mm (typ) 7013A-009 2.9 0.5 0.1 3 2.5 1.5 0.5 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector SANYO : CP 0.05 1.1 0.3 3 2 hFE -- IC VCE=5V 2 fT -- IC VCE=5V Gain-Bandwidth Product, fT -- GHz 10 7 5 DC Current Gain, hFE 100 7 5 3 2 3 2 10 7 5 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR08202 1.0 7 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR08203 Collector Current, IC -- mA 3 2 Cob -- VCB f=1MHz Collector Current, IC -- mA 3 Cre -- VCB f=1MHz Reverse Transfer Capacitance, Cre -- pF 2 Output Capacitance, Cre -- pF 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V ITR08204 Collector-to-Base Voltage, VCB -- V ITR07966 No. A1063-2/6 2SC5227A 14 ⏐S21e⏐2 -- IC f=1GHz 12 NF -- IC VCE=5V f=1GHz Forward Transfer Gain,⏐S21e⏐2 -- dB 12 10 10 Noise Figure, NF -- dB 5 7 2 3 5 7 100 2 ITR08206 8 V CE = 5V V CE =2 V 8 6 6 4 4 2 2 0 3 5 7 1.0 2 3 0 10 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 240 PC -- Ta Collector Current, IC -- mA 7 100 2 ITR08207 Collector Dissipation, PC -- mW 200 160 120 80 40 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C ITR08208 No. A1063-3/6 2SC5227A S Parameters (Common emitter) f=100MHz, 200MHz to 2000MHz(200MHz Step) j50 j25 j100 j150 j10 25 f=100MHz, 200MHz to 2000MHz(200MHz Step) 90° 120° z 0.1GH z 60° VCE=5V IC=20mA 30° j200 j250 150° 0.1GH 2.0Hz 0 10 2.0GHz 2.0GHz 50 100 150 250 ±180° VCE=5V IC=7mA 2.0GHz VCE=2V 2.0GHz 0.1GHz IC=3mA 8 2.0GHz 4 12 16 20 0 --j10 VCE=2V IC=3mA VCE=5V VCE=5V IC=20mA IC=7mA Hz 0.1GHz 1G 0. --j25 --j50 0. --j250 --j200 --j150 z --j100 --120° ITR08209 1G --150° --30° H --60° --90° ITR08210 f=100MHz, 200MHz to 2000MHz(200MHz Step) 2.0GHz f=100MHz, 200MHz to 2000MHz(200MHz Step) 90° 120° VCE=5V IC=7mA 2.0GHz 60° 2.0GHz j50 j25 j100 j150 VCE=5V IC=20mA 150° 30° j10 100 j200 j250 ±180° 0.1GHz VCE=2V 0.1GHz IC=3mA 0.1GHz 0.04 0.08 0.12 0.16 0.2 0 0 10 25 50 150 250 2.0GHz --j10 --150° --30° --j25 ITR08211 --j250 2.0GHz --j200 =5V V =2V VCE CE IC=7mA I =3mA --j150 C --j100 --j50 2.0GHz VCE=5V IC=20mA 0.1GHz --120° --90° --60° 0.1 G 0.1 Hz GH z ITR08212 No. A1063-4/6 2SC5227A S Parameters (Common emitter) VCE=5V, IC=7mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.722 0.587 0.426 0.369 0.344 0.334 0.326 0.324 0.328 0.335 0.346 ∠S11 --41.6 --73.2 --113.0 --136.6 --152.9 --165.7 --177.9 172.3 163.4 154.5 147.5 ⏐S21⏐ 17.352 13.419 8.371 5.914 4.593 3.750 3.178 2.784 2.476 2.246 3.073 ∠S21 148.7 127.6 105.1 92.7 83.9 76.7 70.3 64.9 59.5 54.6 50.0 ⏐S12⏐ 0.029 0.046 0.067 0.084 0.102 0.121 0.141 0.162 0.183 0.204 0.226 ∠S12 70.9 60.8 56.9 58.4 60.3 61.5 62.0 61.8 61.2 60.5 59.6 ⏐S22⏐ 0.883 0.710 0.507 0.423 0.382 0.360 0.350 0.341 0.334 0.328 0.328 ∠S22 --21.3 --33.1 --40.7 --42.5 --43.9 --46.3 --49.1 --52.2 --56.4 --60.8 --65.4 VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.477 0.358 0.288 0.273 0.270 0.271 0.273 0.275 0.284 0.294 0.302 ∠S11 --66.8 --104.1 --142.2 --159.8 --171.7 178.7 169.4 161.1 153.4 145.6 140.8 ⏐S21⏐ 28.090 17.995 9.903 6.777 5.181 4.209 3.554 3.085 2.749 2.479 2.295 ∠S21 133.6 112.9 95.9 86.7 79.9 73.9 68.5 63.6 59.1 54.6 50.6 ⏐S12⏐ 0.022 0.035 0.057 0.081 0.104 0.129 0.153 0.177 0.202 0.224 0.248 ∠S12 67.7 65.3 68.3 69.9 70.2 69.1 67.9 66.2 64.3 62.5 60.4 ⏐S22⏐ 0.726 0.506 0.350 0.299 0.278 0.269 0.264 0.258 0.253 0.249 0.248 ∠S22 --32.7 --41.6 --42.4 --41.8 --43.2 --45.9 --49.6 --53.3 --58.3 --63.4 --68.7 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.858 0.769 0.607 0.528 0.486 0.460 0.453 0.440 0.441 0.447 0.454 ∠S11 --30.5 --57.4 --97.1 --123.2 --141.6 --156.4 --169.4 179.8 170.1 160.4 152.5 ⏐S21⏐ 9.283 8.036 5.756 4.302 3.414 2.834 2.429 2.143 1.919 1.739 1.621 ∠S21 157.3 138.7 113.9 98.1 87.0 78.0 70.3 63.6 57.4 51.7 46.4 ⏐S12⏐ 0.039 0.068 0.099 0.114 0.125 0.137 0.149 0.163 0.179 0.196 0.215 ∠S12 73.6 61.4 48.4 44.4 43.9 45.4 47.5 49.2 50.8 52.3 53.3 ⏐S22⏐ 0.944 0.834 0.641 0.525 0.465 0.429 0.408 0.395 0.385 0.381 0.379 ∠S22 --15.6 --27.5 --40.5 --46.5 --50.2 --53.7 --57.3 --60.9 --65.4 --70.1 --75.2 No. A1063-5/6 2SC5227A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No. A1063-6/6