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2SC5245A

2SC5245A

  • 厂商:

    SANYO(三洋)

  • 封装:

  • 描述:

    2SC5245A - UHF to S-Band Low-Noise Amplifier OSC Applications - Sanyo Semicon Device

  • 数据手册
  • 价格&库存
2SC5245A 数据手册
Ordering number : ENA1074 2SC5245A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A Features • UHF to S-Band Low-Noise Amplifier OSC Applications Low-noise • • • : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1mA). : fT=3.5GHz typ. : ⏐S21e⏐2=5.5dB typ (f=1.5GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 1.5 30 150 150 --55 to +150 Unit V V V mA mW °C °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2908AB MS IM TC-00001685 No. A1074-1/6 2SC5245A Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cob Cre 2 ⏐S21e⏐ 1 S21e⏐22 ⏐ Conditions VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=10mA VCE=5V, IC=10mA VCE=1V, IC=1mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=10mA, f=1.5GHz VCE=1V, IC=1mA, f=1.5GHz VCE=5V, IC=5mA, f=1.5GHz VCE=2V, IC=3mA, f=1GHz Ratings min typ max 1.0 10 60* 5 8 3.5 0.45 0.30 8 10 5.5 1.4 0.9 3.0 0.7 270* Unit μA μA GHz GHz pF pF dB dB dB dB NF1 NF2 * : The 2SC5245A is classified by 10mA hFE as follows : Marking Rank hFE MN3 3 60 to 120 MN4 4 90 to 180 MN5 5 135 to 270 Package Dimensions unit : mm (typ) 7023-009 0.425 3 1.25 2.1 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 1 : Base 2 : Emitter 3 : Collector SANYO : MCP 5 3 2 hFE -- IC VCE=5V 0.2 0.3 0.15 2 fT -- IC Gain-Bandwidth Product, fT -- GHz 10 7 5 DC Current Gain, hFE 100 7 5 3 2 =5V VCE =1V VCE 3 2 10 7 5 0.1 1.0 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 ITR07984 1.0 2 3 5 7 10 2 3 5 IT14098 Collector Current, IC -- mA No. A1074-2/6 2SC5245A 5 3 Cob -- VCB Reverse Transfer Capacitance, Cre -- pF f=1MHz 5 3 2 Cre -- VCB f=1MHz Output Capacitance, Cre -- pF 2 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 12 ITR07986 12 Collector-to-Base Voltage, VCB -- V ITR07987 NF -- IC f=1.5GHz NF -- IC VCE=2V f=1GHz 10 10 Noise Figure, NF -- dB Noise Figure, NF -- dB 8 8 6 6 1V VC E=5V V CE = 4 4 2 2 0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 1.0 2 3 5 7 1.0 2 3 5 7 10 2 3 5 16 Collector Current, IC -- mA ⏐S21e⏐2 -- I ITR07990 16 C Collector Current, IC -- mA S21e⏐2 -- I ITR07991 ⏐ C f=1.5GHz f=1GHz =5V VCE Forward Transfer Gain,⏐S21e⏐2 -- dB 14 12 Forward Transfer Gain,⏐S21e⏐2 -- dB 14 12 10 8 6 4 2 0 =5V V CE 2V 1V 10 8 6 4 2 0 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- mA 160 150 140 2V 1V 2 3 5 7 100 ITR07988 3 5 7 1.0 2 3 5 7 10 2 3 5 PC -- Ta Collector Current, IC -- mA 7 100 ITR07989 Collector Dissipation, PC -- mW 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C ITR07992 No. A1074-3/6 2SC5245A S Parameters S11e f=200MHz to 2000MHz(200MHz Step) j50 j25 120° j100 j150 j10 j200 j250 25 2.0GHz 50 100 150 250 2.0GHz z VCE=5V 2.0GH IC=5mA 0.2GHz z --j250 0.2GHz GH --j200 2.0 V --j150 IC CE =1 =1 V 2V mA V CE= --j100 --j25 =3mA IC 10 S21e f=200MHz to 2000MHz(200MHz Step) 90° 60° 0 --j10 0.2 G 0.2 Hz GH z 150° 0.2GHz VCE=5V IC=5mA 0.2GHz 2.0GHz 2.0GHz =2V 0.2GHz 2.0GHz V CE A 8 2.0GHz 4 ±180° I C=3m =1V V CE 0.2GHz A I C=1m VC = E5 IC =10 V mA 30° 12 16 20 0 S12e f=200MHz to 2000MHz(200MHz Step) 90° 120° 60° 150° 2.0GHz 2.0GHz VCE=5V 2.0GHz IC=5mA 2.0GHz VCE=5V 30° IC=10mA VCE=2V VCE=1V 0.2GHz 0.2GHz IC=3mA IC=1mA 0.2GHz 0.2GHz 0.04 0.08 0.12 0.16 0.2 V =5 A E V C = 10m IC --j50 --150° --30° --120° --90° S22e f=200MHz to 2000MHz(200MHz Step) j50 j25 --60° ITR07994 ITR07993 j100 j150 j10 j200 j250 150 ±180° 0 0 10 25 --j10 --150° --30° --j25 ITR07995 --120° --90° --60° 250 CE=5V IC=10mA 0.2GHz 0.2GHz 0.2GHz 0.2GHz 2.0GHz 2.0GHz --j250 --j200 2.0GHz z =1V 2.0GH VCE mA --j150 1 VCE=5V V =2V I C= CE --j100 IC=5mA I =3mA C 50 100 V --j50 ITR07996 No. A1074-4/6 2SC5245A S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.763 0.590 0.456 0.374 0.323 0.288 0.264 0.248 0.239 0.235 ∠S11 --37.5 --65.4 --85.5 --102.0 --115.0 --127.5 --137.7 --147.4 --156.9 --165.7 ⏐S21⏐ 11.926 9.202 7.173 5.743 4.785 4.105 3.599 3.213 2.905 2.651 ∠S21 146.9 124.3 109.4 98.7 90.5 83.6 77.5 71.3 66.4 61.3 ⏐S12⏐ 0.036 0.058 0.073 0.086 0.098 0.110 0.123 0.136 0.150 0.165 ∠S12 70.7 60.9 57.4 56.7 56.7 57.2 57.7 57.6 57.6 57.2 ⏐S22⏐ 0.892 0.740 0.631 0.566 0.528 0.505 0.488 0.476 0.466 0.462 ∠S22 --19.1 --29.1 --33.7 --35.8 --37.2 --38.4 --39.6 --41.2 --43.3 --45.4 VCE=5V, IC=10mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.605 0.417 0.319 0.266 0.238 0.225 0.215 0.213 0.212 0.216 ∠S11 --52.6 --84.6 --106.3 --124.6 --136.5 --148.9 --158.3 --167.3 --175.6 --177.5 ⏐S21⏐ 16.354 11.011 8.026 6.250 5.115 4.336 3.813 3.365 3.030 2.754 ∠S21 136.2 113.3 100.5 91.3 84.7 78.8 73.4 68.1 63.5 58.9 ⏐S12⏐ 0.031 0.048 0.062 0.076 0.090 0.104 0.119 0.135 0.150 0.166 ∠S12 67.5 62.4 62.2 63.4 64.3 64.4 64.5 63.8 63.1 62.5 ⏐S22⏐ 0.804 0.622 0.533 0.491 0.469 0.458 0.449 0.443 0.436 0.438 ∠S22 --23.9 --30.5 --32.0 --32.4 --33.2 --34.6 --35.8 --37.7 --39.6 --41.9 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.842 0.704 0.579 0.480 0.417 0.376 0.343 0.319 0.303 0.298 ∠S11 --30.7 --56.3 --76.1 --93.1 --106.3 --119.6 --130.2 --140.5 --150.0 --160.0 ⏐S21⏐ 8.491 7.161 5.879 4.882 4.154 3.597 3.212 2.875 2.604 2.383 ∠S21 153.0 131.9 116.3 104.2 95.0 87.1 80.2 73.4 67.7 62.1 ⏐S12⏐ 0.044 0.075 0.095 0.109 0.121 0.132 0.143 0.154 0.166 0.179 ∠S12 72.5 60.9 54.1 51.0 49.3 48.7 48.6 48.7 48.6 48.9 ⏐S22⏐ 0.931 0.808 0.696 0.615 0.564 0.526 0.496 0.475 0.461 0.451 ∠S22 --17.1 --28.8 --36.2 --40.6 --43.5 --45.8 --47.5 --49.6 --51.6 --52.9 VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.945 0.884 0.810 0.728 0.667 0.605 0.561 0.518 0.492 0.465 ∠S11 --18.9 --37.3 --53.6 --69.4 --82.5 --95.8 --106.1 --117.2 --127.5 --137.9 ⏐S21⏐ 3.296 3.206 2.942 2.711 2.449 2.252 2.061 1.909 1.766 1.658 ∠S21 162.5 145.9 131.2 117.8 107.0 96.9 88.1 79.5 72.2 65.2 ⏐S12⏐ 0.054 0.102 0.139 0.166 0.187 0.199 0.207 0.212 0.215 0.217 ∠S12 77.2 65.9 56.3 48.6 42.5 37.3 33.5 30.6 28.6 27.6 ⏐S22⏐ 0.980 0.934 0.870 0.811 0.763 0.715 0.673 0.638 0.611 0.592 ∠S22 --11.0 --20.5 --29.0 --35.5 --40.9 --45.7 --49.4 --53.4 --56.5 --59.9 No. A1074-5/6 2SC5245A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No. A1074-6/6
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