2SC5264LS

Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features · High breakdown voltage (VCBO=1000V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2079D [2SC5264] 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 123 2.4 0.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI (LS) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 2.55 2.55 Conditions 0.6 Ratings 1000 450 9 5 10 2 30 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=450V, IE=0 VCE=1000V, RBE=0 450 1.0 1.0 1.5 Conditions Ratings min typ max 10 1.0 Unit µA mA V mA V V VCEO(sus) IC=100mA, IB=0 IEBO VEB=9V, IC=0 VCE(sat) IC=2.5A, IB=0.5A VBE(sat) IC=2.5A, IB=0.5A Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3101TS KT/O1899TS (KOTO) TA-1923 No.5287–1/4 2SC5264LS Continued from preceding page. Parameter DC Current Gain Storage Time Fall Time Symbol hFE1 hFE2 tstg tf VCE=5V, IC=0.3A VCE=5V, IC=2.0A IC=2.5A, IB1=0.5A, IB2=–1.0A IC=2.5A, IB1=0.5A, IB2=–1.0A Conditions Ratings min 30 10 2.5 0.15 µs µs typ 40 max 50 Unit Switching Time Test Circuit RC IB1 VOUT IB2 VCC IB1 IB2 0.9 VOUT VOUT 0.1VOUT tstg tf 8 IC -- VCE 1.8A 1.4A 1.6A 1.2A 1.0A 6 IC -- VBE VCE=5V 2.0A 5 Collector Current, IC – A 6 Collector Current, IC – A 4 0.8A 0.6A 0.4A 0.2A 4 3 Ta= 120 °C 0 0.2 0.4 0.6 2 2 1 0 0 2 4 6 8 IB=0 10 IT03884 0 0.8 1.0 1.2 1.4 IT03885 Collector-to-Emitter Voltage, VCE – V 100 7 5 Base-to-Emitter Voltage, VBE – V 7 hFE -- IC Collector-to-Emitter Saturation Voltage, VCE (sat) – V VCE(sat) -- IC Ta=1 20°C --40° 25°C C 0.1 2 3 5 Ta=120°C VCE=5V 5 3 2 IC / IB=5 25°C DC Current Gain, hFE 3 2 --40°C 1.0 7 5 3 2 10 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 0.1 7 5 3 Ta= --40°C 120°C 5 7 25°C Collector Current, IC – A 7 1.0 2 3 5 7 IT03887 Collector Current, IC – A IT03886 25°C --40° C No.5287–2/4 2SC5264LS Collector-to-Base Saturation Voltage, VBE (sat) – V 5 3 2 VBE(sat) -- IC IC / IB=5 Switching Time, SW Time – µs 5 3 2 SW Time -- IC tstg 1.0 7 5 3 2 1.0 7 5 3 2 Ta= --40°C 25°C 120°C tf 0.1 7 VCC=200V IC / IB1=5, IB2 / IB1=2 0.1 3 5 7 0.1 2 3 5 7 5 R load 7 0.1 Collector Current, IC – A 1.0 2 3 5 7 2 3 5 7 IT03888 2 10 7 5 3 2 Collector Current, IC – A 1.0 2 3 5 7 IT03889 10 7 5 SW Time -- IB2 tst g Forward Bias A S O ICP=10A IC=5A s 1m PT