2SC5304LS

Ordering number:ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features · High breakdown voltage (VCBO=1000V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2079D [2SC5304] 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 123 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.55 2.55 1:Base 2:Collector 3:Emitter SANYO:TO-220FI (LS) Ratings 1000 450 9 7 14 2 Unit V V V A A W W 2.4 0.6 Tc=25˚C 35 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta=25˚C Parameter Collector Cutoff Current Collector Cutoff Current Collector Saturation Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time Symbol ICBO ICES VCB=450V, IE=0 VCE=1000V, RBE=0 450 1.0 1.0 1.5 30 10 2.5 0.15 µs µs 40 50 Conditons Ratings min typ max 10 1.0 Unit µA mA V mA V V VCEO(sus) IC=100mA, IB=0 IEBO VEB=9V, IC=0 VCE(sat) IC=3.5A, IB=0.7A VBE(sat) hFE1 hFE2 tstg tf IC=3.5A, IB=0.7A VCE=5V, IC=0.3A VCE=5V, IC=3.0A IC=3.5A, IB1=0.7A, IB2=–1.4A IC=3.5A, IB1=0.7A, IB2=–1.4A Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3101TS KT/61598TS (KOTO) TA-1238 No.5883-1/4 2SC5304LS Switching Time Test Circuit RC IB1 VOUT IB2 VCC 0.9 VOUT VOUT 0.1 VOUT tstg tf IB1 IB2 10 I C – VCE 2.0A 1.8A 1.6A 1.4A 7 6 I C - VBE VCE =5V Collector Current, IC – A Collector Current, IC – A 8 6 1.2A 1.0A 0.8A 0.6A 0.4A 5 4 3 4 0.2A 20° C 1 0 0 0.2 0.4 2 IB = 0 0 0 2 4 6 8 10 Ta = 1 2 0.6 0.8 – 40°C 1.0 25°C 1.2 1.4 Collector-to-Emitter Voltage, VCE – V 100 7 5 Base-to-Emitter Voltage, VBE – V 10 I /I =5 7CB 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 10 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 hFE - I C Ta=120°C VCE(sat) - I C 120 °C VCE =5V 25°C –40°C Collector–to–Emitter Saturation Voltage, VCE (sat) –V DC Current Gain,hFE 2 10 7 5 3 2 1.0 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 Collector Current, IC – A Base–to–Emitter Saturation Voltage, VBE (sat) – V 10 7 5 3 2 1.0 7 5 3 2 0.1 Collector Current, IC – A IC /IB =5 10 7 5 VBE(sat) - I C Switching Time, SW Time – µs SW Time - I C t stg VCC =200V IC /IB1=5 IB2/IB1=2 R load 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 0.1 2 3 5 7 1.0 Ta=–40°C tf 120°C 25°C 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 – 40 5 7 °C 10 Collector Current, IC – A Collector Current, IC – A No.5883-2/4 Ta = 3 25° C 2SC5304LS 10 7 5 SW Time - I B2 t stg VCC = 200V IC = 3.5A IB1 =0.7A R load 3 2 Forward Bias A S O I CP=14A PT