2SC536N

Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications · Capable of being used in the low frequency to high frequency range. Package Dimensions unit:mm 2164 [2SA608N/2SC536N] 4.5 3.7 Features · Large current capacity and wide ASO. 0.45 3.5 1.4max 0.6 1.27 4.0max 13.7 14.0 0.5 0.45 4.5 0.44 1 2.5 2 2.5 3 ( ) : 2SA608N Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Emitter 2 : Collector 3 : Base SANYO : NPA-WA Ratings (–50)60 (–)50 (–)6 (–)150 (–)400 500 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 VCB=(–)40V, IE=0 VEB=(–)5V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)0.1mA 160* 70 Conditions Ratings min typ max (–)0.1 (–)0.1 560* Unit µA µA Continued on next page. * The 2SA608N/2SC536N are classified by 1mA hFE as follow Rank hFE F 160 to 320 G 280 to 560 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 10700TS (KOTO) TA-2543 No.6324–1/4 2SA608N/2SC536N Continued on preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol fT Cob VCE(sat) VBE(sat) Conditions VCE=(–)6V, IC=(–)10mA VCB=(–)6V, f=1MHz IC=(–)100mA, IB=(–)10mA IC=(–)100mA, IB=(–)10mA (–)60 (–)50 (–)6 Ratings min typ 200 3.0 (4.5) (–)0.3 (–)1.0 max Unit MHz pF pF V V V V V V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 --16 IC -- VCE µA --50 µA --45 A --40µ A --35µ 2SA608N Collector Current, IC – mA 20 IC -- VCE 50µA 45µA 40µA 2SC536N Collector Current, IC – mA 16 --12 --8 A --30µ --25µA --20µA --15µA 35µA 12 30µA 25µA 8 20µA 15µA --4 --10µA --5µA 4 10µA 5µA IB=0 40 50 IT00497 0 0 --10 --20 --30 --40 IB=0 --50 IT00496 0 0 10 20 30 Collector-to-Emitter Voltage, VCE – V --240 Collector-to-Emitter Voltage, VCE – V 240 IC -- VBE 2SA608N VCE=--6V Collector Current, IC – mA IC -- VBE 2SC536N VCE=6V --200 200 Collector Current, IC – mA --160 160 --120 120 Ta=7 5°C 25°C --25° C --40 40 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT00498 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT00499 Base-to-Emitter Voltage, VBE – V 1000 7 5 Base-to-Emitter Voltage, VBE – V 1000 hFE -- IC 2SA608N VCE=--6V hFE -- IC 2SC536N VCE=6V Ta=75°C --25°C 7 5 DC Current Gain, hFE 2 DC Current Gain, hFE 3 Ta=75°C --25°C 3 2 100 7 5 3 2 25°C 100 7 5 3 2 10 --0.1 2 3 5 7--1.0 2 3 10 Collector Current, IC – mA 5 7 --10 23 5 7--100 2 3 57 --1000 IT00500 0.1 23 5 7 1.0 23 Collector Current, IC – mA 5 7 10 23 25°C --25° C --80 80 Ta=75 ° C 25°C 5 7 100 23 5 7 1000 IT00501 No.6324–2/4 2SA608N/2SC536N 1000 f T -- IC 2SA608N VCE=--6V 1000 f T -- IC 2SC536N VCE=6V Gain-Bandwidth Product, fT – MHz 5 3 2 Gain-Bandwidth Product, fT – MHz 7 7 5 3 2 100 7 5 3 2 100 7 5 3 2 10 --1.0 2 3 5 7 --10 2 3 Collector Current, IC – mA 5 7 --100 2 3 5 7--1000 IT00502 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC – mA 100 7 5 5 7 1000 IT00503 100 7 5 Cob -- VCB 2SA608N f=1MHz Cob -- VCB 2SC536N f=1MHz Output Capacitance, Cob – pF 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT00504 Output Capacitance, Cob – pF 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT00505 Collector-to-Base Voltage, VCB -- V Collector-to-Base Voltage, VCB -- V 1.0 7 --1.0 7 VCE(sat) -- IC 2SA608N IC / IB=--10 Collector-to-Emitter Saturation Voltage, VCE (sat) – V VCE(sat) -- IC 2SC536N IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE (sat) – V 5 3 2 5 3 2 --0.1 7 5 3 2 0.1 7 5 3 2 0.01 --0.01 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC – mA 1000 7 5 5 7--1000 IT00506 1.0 2 3 5 7 10 2 3 5 7 100 2 3 ASO Collector Current, IC – mA 600 5 7 1000 IT00507 PC -- Ta ICP IC 2SA608N / 2SC536N For PNP, the polarity is reversed. 10 10 2SA608N / 2SC536N Collector Dissipation, PC – mW 500 Collector Current, IC – mA 3 2 100 7 5 3 2 10 7 5 3 2 5 7 1.0 2 3 5 7 10 ms DC 0m 400 s op era tio n 300 200 100 0 2 3 5 Collector-to-Emitter Voltage, VCE – V 7 100 IT00511 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C IT00510 No.6324–3/4 2SA608N/2SC536N Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2000. Specifications and information herein are subject to change without notice. PS No.6324–4/4