Ordering number : ENA1090
2SC5374A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC5374A
Features
• •
VHF to UHF Band OSC, High-Frequency Amplifier Applications
High gain : ⏐S21e⏐2=10.5dB typ (f=1GHz). High cut-off frequency : fT=5.2GHz typ.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 2 100 100 150 --55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE1 hFE2 fT Cob Cre
2 ⏐S21e⏐ NF
Conditions VCB=10V, IE=0A VEB=1V, IC=0A VCE=3V, IC=7mA VCE=3V, IC=30mA VCE=3V, IC=7mA VCB=3V, f=1MHz VCB=3V, f=1MHz VCE=3V, IC=7mA, f=1GHz VCE=3V, IC=7mA, f=1GHz
Ratings min typ max 1.0 10 110 100 3 5.2 1.0 0.7 8 10.5 1.4 2.5 1.5 180
Unit μA μA
GHz pF pF dB dB
Marking : NA
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment.
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O2809AB TK IM TC-00002118 No. A1090-1/6
2SC5374A Package Dimensions
unit : mm (typ) 7027-002
1.6 0.8
Marking
3
NA
0.4
0.4
1 : Base 2 : Emitter 3 : Collector
2 Top view
0.2
1.6 0.5 0.5
1 2
3
0.1
0.3
1
0 to 0.1
0.1 MIN
1 : Base 2 : Emitter 3 : Collector SANYO : SMCP
0.75 0.6
35
IC -- VCE
200μA 180μA 160μA
32 28
IC -- VBE
VCE=3V
30
Collector Current, IC -- mA
Collector Current, IC -- mA
25
24 20 16 12 8 4 0
140μA
20
120μA
100μA
15
80μA 60μA 40μA 20μA
10
5
0
IB=0μA
0 1 2 3 4 5 6 7 8 9 10
0
0.2
0.4
0.6
0.8
1.0
1.2 ITR08169
Collector-to-Emitter Voltage, VCE -- V
7 5
ITR08168 2
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
fT -- IC
VCE=3V f=1GHz
VCE=3V
Gain-Bandwidth Product, fT -- GHz
3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR08170
10 7 5
DC Current Gain, hFE
3 2
3 2
100 7 5
1.0 7
3
5 7 1.0 2 3 5 7 10 2 3 5 7
Collector Current, IC -- mA
Collector Current, IC -- mA
ITR08171
No. A1090-2/6
2SC5374A
3 2
Cob -- VCB
f=1MHz
3
Cre -- VCB
f=1MHz
Reverse Transfer Capacitance, Cre -- pF
5 5
2
Output Capacitance, Cob -- pF
1.0 7 5
1.0 7 5
3 2
3 2
0.1 7 7 0.1 2 3 7 1.0 2 3 7 10 2 3
0.1 7 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Collector-to-Base Voltage, VCB -- V
10
ITR08172 14
NF -- IC
Forward Transfer Gain,⏐S21e⏐2 -- dB
VCE=3V f=1GHz
Collector-to-Base Voltage, VCB -- V ⏐S21e⏐2 -- I
ITR08173
C
VCE=3V f=1GHz
12
8
Noise Figure, NF -- dB
10
6
8
4
6
4
2
2 0 7
0 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC -- mA
120
1.0
2
3
5
7
10
2
3
5
ITR08174
PC -- Ta
Collector Current, IC -- mA
7 100 ITR08175
Collector Dissipation, PC -- mW
100
80
60
40
20
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
ITR08176
No. A1090-3/6
2SC5374A
S Parameter
S11e f=100MHz, 200MHz to 2000MHz(200MHz Step) j50 j25 j100 j150 j10 j200 j250 150° S21e f=100MHz, 200MHz to 2000MHz(200MHz Step) 120° 90° 60°
VCE=3V IC=7mA
VCE=5V IC=20mA
30°
0.1GHz
VCE=1V IC=3mA
2.0GHz
0
10 25 50 100 150 250 500
±180°
4
8
12
16 20
VCE=5V IC=20mA
2.0GHz
0
--j10
VCE=1V IC=3mA
VCE=3V IC=7mA 0.1GHz
--j250 --j200 --j150
--150°
--30°
--j25 --j50
--j100 --120°
ITR08177
--60° --90°
ITR06391
S12e f=100MHz, 200MHz to 2000MHz(200MHz Step) 90° 120° 60°
2.0GHz
S22e f=100MHz, 200MHz to 2000MHz(200MHz Step) j50 j25 30° j100 j150 j10 j200 j250
VCE=3V IC=7mA VCE=5V IC=20mA
0.1GHz
150°
VCE=1V IC=3mA
0.05 0.10 0.15 0.20 0.25
±180°
0
0
10
25
50
100 150 250 500
VCE=3V IC=7mA
2.0GHz
VCE=5V IC=20mA
--j10 --150° --30° --j25
ITR06392
0.1GHz
VCE=1V IC=3mA
--j250 --j200 --j150
--j100 --j50
--120° --90°
--60°
ITR06393
No. A1090-4/6
2SC5374A
S Parameters (Common emitter)
VCE=1V, IC=3mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.875 0.785 0.651 0.613 0.581 0.568 0.556 0.563 0.558 0.560 0.567 ∠S11 --40.6 --71.6 --114.8 --136.9 --153.9 --164.2 --172.0 --178.1 175.4 168.9 163.1 ⏐S21⏐ 8.627 6.874 4.701 3.365 2.716 2.218 1.863 1.626 1.473 1.345 1.230 ∠S21 152.3 132.5 107.3 92.8 81.9 73.4 66.2 59.6 53.9 48.1 42.5 ⏐S12⏐ 0.062 0.101 0.135 0.152 0.155 0.161 0.170 0.177 0.185 0.196 0.205 ∠S12 67.9 52.1 37.1 31.1 29.9 30.0 30.5 32.7 35.4 37.4 38.0 ⏐S22⏐ 0.918 0.748 0.537 0.430 0.361 0.326 0.300 0.297 0.306 0.313 0.335 ∠S22 --23.4 --41.7 --57.6 --65.6 --74.3 --80.2 --86.1 --92.3 --96.5 --100.6 --102.9
VCE=3V, IC=7mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.789 0.670 0.552 0.522 0.504 0.488 0.478 0.481 0.478 0.492 0.489 ∠S11 --48.3 --83.7 --123.8 --145.3 --158.5 --169.1 --176.1 178.4 172.7 167.4 162.0 ⏐S21⏐ 16.232 12.431 7.607 5.401 4.155 3.425 2.849 2.511 2.237 2.016 1.844 ∠S21 147.7 126.4 104.7 92.7 84.1 77.1 71.0 65.6 60.7 55.5 50.5 ⏐S12⏐ 0.039 0.061 0.081 0.094 0.106 0.121 0.136 0.152 0.167 0.185 0.200 ∠S12 66.1 53.0 45.2 45.9 48.2 49.1 51.0 52.2 52.8 53.2 52.7 ⏐S22⏐ 0.862 0.673 0.438 0.333 0.290 0.270 0.253 0.239 0.240 0.245 0.248 ∠S22 --27.2 --44.6 --59.1 --65.1 --68.7 --71.0 --74.7 --79.6 --82.8 --86.7 --90.0
VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.643 0.530 0.459 0.447 0.440 0.434 0.437 0.437 0.438 0.439 0.444 ∠S11 --66.4 --104.6 --140.3 --157.2 --168.4 --175.9 177.1 173.0 168.4 164.2 159.1 ⏐S21⏐ 26.381 17.543 9.835 6.805 5.210 4.194 3.518 3.077 2.730 2.459 2.249 ∠S21 137.4 116.5 98.9 89.4 82.4 76.6 71.5 66.7 62.5 58.0 53.5 ⏐S12⏐ 0.029 0.041 0.058 0.074 0.092 0.110 0.129 0.148 0.166 0.186 0.203 ∠S12 62.8 54.2 55.4 59.2 61.4 61.9 62.3 61.8 61.6 60.7 59.5 ⏐S22⏐ 0.748 0.531 0.322 0.246 0.213 0.199 0.191 0.184 0.181 0.186 0.192 ∠S22 --36.3 --52.5 --62.7 --65.5 --68.6 --70.2 --72.9 --76.5 --80.9 --84.8 --87.3
No. A1090-5/6
2SC5374A
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of October, 2009. Specifications and information herein are subject to change without notice.
PS No. A1090-6/6