2SC5414A

Ordering number : ENA1081 2SC5414A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5414A Features • • High-Frequency Low-Noise Amplifier Applications High gain : ⏐S21e⏐2=9.5dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 12 2 100 400 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=30mA VCE=5V, IC=70mA 90* 70 Conditions Ratings min typ max 1.0 10 270* Unit μA μA Continued on next page. * : The 2SC5414A is classified by 30mA hFE as follows : Rank E F hFE 90 to 180 135 to 270 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 93009AB TK IM TC-00002103 No. A1081-1/6 2SC5414A Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol fT Cob Cre 2 ⏐S21e⏐ NF Conditions VCE=5V, IC=30mA VCB=5V, f=1MHz VCB=5V, f=1MHz VCE=5V, IC=30mA, f=1GHz VCE=5V, IC=7mA, f=1GHz Ratings min 5 typ 6.7 1.0 0.6 8 9.5 1.1 2.0 1.5 max Unit GHz pF pF dB dB Package Dimensions unit : mm (typ) 7522-003 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 14.0 5.0 0.44 123 1 : Base 2 : Emitter 3 : Collector 1.3 1.3 SANYO : NP 50 IC -- VCE 0.35mA 0.30mA 0.25mA Collector Current, IC -- mA 100 IC -- VBE Collector Current, IC -- mA 40 80 30 0.20mA 0.15mA 60 20 40 0.10mA 10 0.05mA IB=0mA 0 2 4 6 8 10 IT13392 0 0 0 0.2 0.4 0.6 V CE = 5V 2V 0.8 1.0 20 1.2 IT13393 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V No. A1081-2/6 2SC5414A 7 5 hFE -- IC Gain-Bandwidth Product, fT -- GHz 10 fT -- IC =5V VCE 2V 7 3 DC Current Gain, hFE 2 VCE=5V 5 100 7 5 3 2 2V 3 2 10 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 1.0 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 10 7 IT13394 10 Cob -- VCB f=1MHz Collector Current, IC -- mA 7 100 IT13401 Cre -- VCB Output Capacitance, Cob -- pF 5 3 2 Reverse Transfer Capacitance, Cre -- pF 7 5 3 2 f=1MHz 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.1 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 IT13397 3 Collector-to-Base Voltage, VCB -- V 10 IT13396 12 NF -- IC f=1GHz Collector-to-Base Voltage, VCB -- V ⏐S21e⏐2 -- I C Forward Transfer Gain,⏐S21e⏐2 -- dB V V CE=5 10 f=1GHz 8 Noise Figure, NF -- dB 2V 8 6 6 4 4 2 2V V CE= 5V 7 1.0 2 3 5 7 10 2 3 5 2 0 0 Collector Current, IC -- mA 500 7 100 IT13399 7 1.0 2 3 5 7 10 2 3 5 PC -- Ta Collector Current, IC -- mA 7 100 IT13402 Collector Dissipation, PC -- mW 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT13403 No. A1081-3/6 2SC5414A S Parameters (Common emitter) VCE=2V, IC=5mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.789 0.604 0.404 0.331 0.297 0.281 0.275 0.277 0.281 0.295 0.314 ∠S11 --46.1 --80.1 --123.7 --153.8 --177.9 160.9 140.4 122.6 103.9 89.0 73.5 ⏐S21⏐ 12.790 9.631 5.802 4.101 3.180 2.642 2.254 1.983 1,787 1.626 1.511 ∠S21 142.7 117.8 90.2 72.4 58.0 45.5 32.7 21.5 10.3 --0.1 --10.3 ⏐S12⏐ 0.041 0.063 0.090 0.112 0.137 0.163 0.190 0.218 0.247 0.278 0.311 ∠S12 66.1 53.1 44.6 42.2 39.3 35.7 31.0 26.0 20.5 14.4 7.7 ⏐S22⏐ 0.870 0.691 0.510 0.444 0.419 0.413 0.410 0.405 0.395 0.390 0.380 ∠S22 --25.4 --39.5 --51.7 --58.8 --66.4 --74.1 --82.5 --90.9 --99.8 --108.3 --117.5 VCE=2V, IC=10mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.638 0.438 0.289 0.245 0.227 0.221 0.215 0.218 0.231 0.243 0.267 ∠S11 --60.1 --95.8 --138.8 --168.0 170.3 150.3 130.3 113.3 96.2 80.8 66.9 ⏐S21⏐ 18.641 12.165 6.728 4.654 3.575 2.950 2.520 2.203 1.978 1.805 1.668 ∠S21 131.8 107.7 84.2 69.1 56.2 44.5 32.5 21.6 11.2 1.2 --8.9 ⏐S12⏐ 0.036 0.054 0.083 0.113 0.146 0.177 0.221 0.240 0.272 0.304 0.336 ∠S12 63.1 55.5 53.2 50.5 45.7 40.1 30.9 27.0 20.1 13.0 5.5 ⏐S22⏐ 0.754 0.549 0.392 0.348 0.336 0.335 0.332 0.331 0.320 0.314 0.306 ∠S22 --33.9 --45.7 --53.9 --59.7 --67.3 --75.3 --86.7 --92.3 --101.1 --109.7 --118.6 VCE=2V, IC=20mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.476 0.317 0.227 0.206 0.195 0.194 0.198 0.204 0.213 0.230 0.252 ∠S11 --75.8 --113.1 --155.0 178.6 158.2 139.7 121.4 105.8 89.2 75.2 62.9 ⏐S21⏐ 22.939 13.544 7.193 4.913 3.764 3.091 2.632 2.305 2.066 1.881 1.742 ∠S21 121.7 100.3 80.3 66.5 54.3 43.4 32.0 21.3 11.2 1.5 --8.4 ⏐S12⏐ 0.031 0.047 0.081 0.116 0.151 0.186 0.220 0.253 0.285 0.318 0.350 ∠S12 62.9 61.2 59.5 55.1 49.1 42.4 34.9 27.5 20.1 12.5 4.6 ⏐S22⏐ 0.633 0.427 0.319 0.293 0.289 0.291 0.294 0.290 0.281 0.275 0.264 ∠S22 --40.4 --48.3 --53.3 --59.0 --67.1 --75.4 --84.4 --93.3 --102.3 --111.0 --120.0 VCE=2V, IC=30mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.403 0.284 0.228 0.217 0.213 0.211 0.216 0.222 0.238 0.248 0.271 ∠S11 --88.7 --126.8 --167.6 169.3 151.0 134.3 117.8 103.1 87.6 74.2 61.6 ⏐S21⏐ 23.847 13.541 7.074 4.827 3.687 3.034 2.579 2.262 2.029 1.840 1.706 ∠S21 116.6 96.9 78.2 65.0 52.8 42.2 30.8 20.4 10.3 0.3 --9.7 ⏐S12⏐ 0.028 0.045 0.081 0.116 0.153 0.188 0.223 0.256 0.289 0.321 0.354 ∠S12 63.5 63.7 61.5 56.8 50.3 43.2 35.5 27.9 20.3 12.6 4.5 ⏐S22⏐ 0.561 0.380 0.295 0.275 0.276 0.281 0.283 0.280 0.271 0.265 0.254 ∠S22 --42.5 --47.5 --51.3 --57.2 --66.0 --74.9 --84.2 --93.2 --102.4 --111.2 --120.5 No. A1081-4/6 2SC5414A S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.807 0.627 0.399 0.314 0.266 0.242 0.230 0.227 0.237 0.249 0.273 ∠S11 --41.4 --72.5 --114.4 --144.0 --169.8 168.7 146.1 125.8 105.7 88.5 72.7 ⏐S21⏐ 12.983 10.034 6.208 4.422 3.425 2.831 2.422 2.121 1.902 1.725 1.595 ∠S21 145.1 120.7 92.5 74.9 60.3 47.9 35.3 24.0 13.1 3.1 --7.2 ⏐S12⏐ 0.032 0.052 0.074 0.093 0.115 0.137 0.161 0.186 0.212 0.240 0.271 ∠S12 68.1 55.7 47.6 45.2 42.9 39.8 35.8 31.3 26.4 21.0 14.8 ⏐S22⏐ 0.899 0.748 0.590 0.532 0.514 0.512 0.510 0.508 0.504 0.501 0.497 ∠S22 --20.6 --32.3 --42.7 --49.4 --56.8 --64.6 --72.6 --80.8 --89.1 --97.2 --106.0 VCE=5V, IC=10mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.664 0.450 0.264 0.206 0.175 0.163 0.156 0.158 0.174 0.188 0.212 ∠S11 --52.5 --85.2 --124.5 --153.2 --178.9 159.7 135.8 115.9 95.5 77.7 62.7 ⏐S21⏐ 19.156 13.004 7.320 5.075 3.884 3.190 2.715 2.376 2.127 1.938 1.788 ∠S21 134.9 110.4 86.3 70.9 58.1 46.8 35.0 24.3 14.0 4.1 --5.6 ⏐S12⏐ 0.029 0.044 0.069 0.095 0.122 0.150 0.178 0.204 0.233 0.262 0.292 ∠S12 65.7 58.6 55.5 53.3 48.7 43.8 37.8 31.8 25.5 19.0 12.0 ⏐S22⏐ 0.807 0.621 0.490 0.450 0.444 0.446 0.446 0.448 0.439 0.434 0.431 ∠S22 --26.7 --36.3 --42.7 --48.6 --56.0 --64.0 --72.4 --80.6 --88.9 --96.9 --105.3 VCE=5V, IC=30mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.423 0.258 0.155 0.129 0.119 0.116 0.119 0.129 0.146 0.160 0.187 ∠S11 --71.0 --103.4 --145.0 173.2 161.6 140.1 117.4 98.0 79.7 65.1 54.4 ⏐S21⏐ 26.259 15.300 8.070 5.493 4.203 3.436 2.914 2.545 2.284 2.064 1.913 ∠S21 120.2 99.6 80.5 67.5 55.9 45.4 34.2 24.3 14.2 4.9 --4.9 ⏐S12⏐ 0.024 0.038 0.068 0.098 0.129 0.160 0.190 0.219 0.249 0.278 0.308 ∠S12 66.3 65.6 63.8 59.1 53.1 46.5 39.4 32.5 25.3 18.2 10.7 ⏐S22⏐ 0.647 0.482 0.405 0.388 0.390 0.396 0.401 0.398 0.393 0.389 0.386 ∠S22 --32.7 --36.2 --39.6 --45.9 --54.2 --62.7 --71.8 --80.2 --88.6 --96.9 --105.3 VCE=5V, IC=50mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.381 0.251 0.185 0.174 0.163 0.167 0.176 0.184 0.197 0.214 0.243 ∠S11 --82.7 --120.2 --164.6 170.5 149.4 130.7 112.8 96.6 80.7 68.1 55.0 ⏐S21⏐ 25.958 14.443 7.561 5.153 3.904 3.194 2.696 2.358 2.115 1.908 1.766 ∠S21 114.6 95.9 78.0 64.8 52.8 41.9 31.0 20.5 10.1 0.1 --9.6 ⏐S12⏐ 0.023 0.037 0.067 0.096 0.127 0.157 0.187 0.216 0.246 0.275 0.305 ∠S12 65.6 65.8 64.0 59.6 53.5 47.1 39.8 32.9 25.9 18.8 11.1 ⏐S22⏐ 0.611 0.465 0.405 0.396 0.401 0.406 0.410 0.409 0.404 0.400 0.392 ∠S22 --32.2 --34.5 --38.7 --46.0 --54.9 --63.5 --72.9 --81.5 --90.3 --98.2 --106.2 No. A1081-5/6 2SC5414A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2009. Specifications and information herein are subject to change without notice. PS No. A1081-6/6