2SC5420

Ordering number : EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features • High breakdown voltage (VCBO=1000V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit: mm 2069B-SMP-FD [2SC5420] 10.2 4.5 1.3 8.8 1.2 0.8 1 2 3 2.7 0.4 3.0 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.55 2.55 Tc=25°C Ratings 1000 450 9 5 10 1.75 50 150 –55 to +150 1.2 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current C-E Saturation Voltage B-E Saturation Voltage DC Current Gain Storage Time Fall Time Symbol ICBO ICES VCEO(SUS) IEBO VCE(sat) VBE(sat) hFE(1) hFE(2) tstg tf Conditions VCB=450V, IE=0 VCE=1000V, RBE=0 IC=100mA, IB=0 VEB=9V, IC=0 IC=2.5A, IB=0.5A IC=2.5A, IB=0.5A VCE=5V, IC=0.3A VCE=5V, IC=2.0A IC=2.5A, IB1=0.5A, IB2=–1.0A IC=2.5A, IB1=0.5A, IB2=–1.0A Ratings min typ max 10 1.0 1.0 1.0 1.5 50 2.5 0.15 Unit µA mA V mA V V 450 30 10 40 µs µs SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN O1397TS (KOTO) TA-1037 No.5762-1/4 2SC5420 Switching Time Test Circuit RC IB1 VOUT IB2 VCC 0.9 VOUT VOUT 0.1VOUT tstg tf IB1 IB2 10 I C – VCE 6 I C – VBE VCE =5V Collector Current, IC – A 2.0A 6 1.8A 1.2A 1.6A 1.4A 1.0A Collector Current, IC – A 8 5 4 4 0.4A 0.2A 2 Ta= 120 °C 25°C 0 0.2 0.4 0.6 0.8 0.8A 0.6A 3 2 1 0 IB =0 2 4 6 8 10 0 0 –40° 1.0 C 1.2 1.4 Collector-to-Emitter Voltage, VCE – V Collector-to-Emitter Saturation Voltage, VCE(sat) – V 100 7 5 3 Base-to-Emitter Voltage, VBE – V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 hFE – I C Ta=120°C 25°C –40°C VCE(sat) – I C IC / IB =5 VCE =5V DC Current Gain, hFE 2 10 7 5 3 2 1.0 7 5 3 Ta =–40°C 25°C 5 120°C 2 3 5 7 1.0 2 3 5 7 10 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 7 0.1 Collector Current,IC – A Base-to-Emitter Saturation Voltage, VCE(sat) – V 5 3 2 Collector Current,IC – A 10 7 5 3 2 1.0 7 5 3 2 VBE(sat) – I C IC / IB =5 SW Time – I C VCC =200V IC / IB1=5 IB2 /IB1 =2 R load Switching Time, SW Time – µs t stg 1.0 7 5 3 2 Ta=–40°C 25°C 120°C tf 0.1 7 5 0.1 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current,IC – A Collector Current,IC – A No.5762-2/4 2SC5420 10 7 SW Time – I B2 t stg VCC =200V IC =2.5A IB1 =0.5A R load 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 Forward Bias ASO ICP IC s 0µ 10 30 s 1m Switching Time, SW Time – µs 5 3 2 1.0 7 5 3 2 0.1 7 5 PT