2SC5453

Ordering number:EN5958 NPN Triple Diffused Planar Silicon Transistor 2SC5453 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5453] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 5.45 5.45 Conditions 2.8 1 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Ratings 1600 800 6 25 50 3.5 210 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Symbol ICES VCE=1600V, RBE=0 VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO VCB=800V, IE=0 hFE1 hFE2 VCE=5V, IC=1.0A VCE=5V, IC=18A Conditions Ratings min 800 1.0 10 15 4 30 7 typ max 1.0 Unit mA V mA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61099TS (KOTO) TA-1383 No.5958–1/4 2SC5453 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Storage Time Fall Time Symbol VCE(sat) VBE(sat) tstg tf IC=18A, IB=4.5A IC=18A, IB=4.5A IC=15A, IB1=2.5A, IB2=–6.25A IC=15A, IB1=2.5A, IB2=–6.25A Conditions Ratings min typ max 5 1.5 3.0 0.2 Unit V V µs µs Switching Time Test Circuit PW=20µs D.C.≤1% INPUT RB VR 50Ω + 100µF + 470µF RL=13.3Ω IB1 IB2 OUTPUT VBE=–2V VCC=200V 30 I C - VCE 10.0A 8.0A 25 I C - VBE VCE = 5V 25 Collector Current, IC – A 20 Collector Current, IC – A 6.0A 5.0A 4.0A 3.0A 20 15 15 2.0A 1.0A 5 5 0 IB = 0 0 1 2 3 4 5 6 7 8 9 10 0 0 0.2 0.4 0.6 Ta = 0.5A 12 10 0°C 25° C - 40 °C 0.8 1.0 10 1.2 Collector-to-Emitter Voltage, VCE – V 100 7 5 Base-to-Emitter Voltage, VBE – V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 hFE - I C VCE = 5V Ta = 120° C VCE(sat) - I C IC / IB = 5 DC Current Gain, hFE 3 2 10 7 5 3 2 1.0 0.1 25°C -40°C Collector-to-Emitter Saturation Voltage, VCE(sat) – V Ta=-40°C 120°C 25°C 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.01 0.1 Collector Current, IC – A Collector Current, IC – A No.5958–2/4 2SC5453 10 7 5 3 2 1.0 7 5 3 2 SW Time - I C Switching Time, SW Time – µs 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 7 SW Time - I B2 t st g Switching Time, SW Time – µs t stg VCC =200V IC =15A IB1 =2.5A R load tf tf VCC =200V 0.1 IC / IB1=6 7 IB2/ IB1=2.5 5 R load 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC – A 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 Tc=25°C 3 Signal pulse 2 23 5 7 10 Base Current, IB2 – A 100 7 5 Forward Bias A S O I CP IC P C =2 Reverse Bias A S O Collector Current, IC – A W Collector Current, IC – A 5 7 1000 10 3 2 10 7 5 3 2 1.0 7 5 3 2 30 s 0µ s 1m 10 m s D C op er at io n 2 3 5 7 100 2 3 0.1 5 L=100µH IB2 = -5A Tc=25°C Single pulse 7 100 2 3 5 7 1000 2 3 5 Collector-to-Emitter Voltage, VCE – V 4.0 3.5 Collector-to-Emitter Voltage, VCE – V 240 210 P C - Ta P C - Tc Collector Dissipation, PC – W 3.0 Collector Dissipation, PC – W 100 120 140 160 200 160 No 2.0 he at sin k 120 80 1.0 40 0 0 20 40 60 80 Ambient Temperature, Ta – °C 0 0 20 40 Case Temperature, Tc – °C 60 80 100 120 140 160 No.5958–3/4 2SC5453 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 1999. Specifications and information herein are subject to change without notice. PS No.5958–4/4