Ordering number : ENA1118
2SC5551A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC5551A
Features
• • •
High-Frequency Medium-Output Amplifier Applications
High fT : (fT=3.5GHz typ). Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg When mounted on ceramic substrate (250mm2✕0.8mm) Conditions Ratings 40 30 2 300 600 1.3 150 --55 to +150 Unit V V V mA mA W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO VCB=20V, IE=0A VEB=1V, IC=0A Conditions Ratings min typ max 1.0 5.0 Unit μA μA
Continued on next page.
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D0209AB TK IM TC-00002042 No. A1118-1/4
2SC5551A
Continued from preceding page.
Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol hFE1 hFE2 fT Cob Cre VCE(sat) VBE(sat) Conditions VCE=5V, IC=50mA VCE=5V, IC=300mA VCE=5V, IC=50mA VCB=10V, f=1MHz VCB=10V, f=1MHz IC=50mA, IB=5mA IC=50mA, IB=5mA Ratings min 90 20 3.5 2.9 1.5 0.07 0.8 0.3 1.2 4.0 GHz pF pF V V typ max 270 Unit
* : The 2SC5551A is classified by 50mA hFE as follows :
Marking Rank hFE
EB E E 90 to 180
EB F F 135 to 270
Package Dimensions
unit : mm (typ) 7007B-004
100
IC -- VCE
500μA 450μA
1000 7 5
hFE -- IC
VCE=5V
Collector Current, IC -- mA
80
DC Current Gain, hFE
400μA 350μA
3 2
60
300μA 250μA
200μA
150μA
100 7 5 3 2 10 1.0
40
20
100μA 50μA IB=0μA
0 4 8 12 16 20 IT01066
0
2
3
5 7 10
2
3
5 7 100
2
3
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
5 7 1000 IT01067
No. A1118-2/4
2SC5551A
7 5
VCE(sat) -- IC
IC / IB=10
20
⏐S21e⏐2 -- IC
VCE=5V
Forward Transfer Gain,⏐S21e⏐2 -- dB
18 16 14 12 10 8 6 4 2 0 2 3 5 7 10 2 3 5 7 100 2
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
3 2
f=
0 20
M
Hz
0.1 7 5
f=50
0MH
z
3 2 1.0
2
3
5 7 10
2
3
5 7 100
2
3
57 IT15252
1.0
3
Collector Current, IC -- mA
Output Capacitance, Reverse Transfer Capacitance, Cob, Cre -- pF
10
Cob, Cre -- VCB
Collector Current, IC -- mA
10
5 7 1000 IT01069
fT -- IC
f=1MHz
7
7
VCE=5V
Gain-Bandwidth Product, fT -- GHz
5 3 2
5
3
Cob
1.0 7 5 3 2
2
Cre
1.0 1.0 2 3 5 7 10 2 3 5
0.1
Collector-to-Base Voltage, VCB -- V
1000 7 5 3 2
100 IT01070
7
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000 IT01071
ASO
Collector Current, IC -- mA
1.4 1.3 1.2
PC -- Ta
ICP=600mA IC=300mA
When mounted on ceramic substrate (250mm2✕0.8mm)
10
DC
m
Collector Dissipation, PC -- W
Collector Current, IC -- mA
s
1m s
1.0
op
era
tio
0.8
100 7 5 3 2
n
0.6
0.4
10 1.0
Ta=25°C Single pulse When mounted on ceramic substrate (250mm2✕0.8mm)
2 3 5 7 10 2 3 5 IT01072
0.2 0 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V
Ambient Temperature, Ta -- °C
IT01073
No. A1118-3/4
2SC5551A
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This catalog provides information as of December, 2009. Specifications and information herein are subject to change without notice.
PS No. A1118-4/4