2SC5565

Ordering number:ENN6306 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2012/2SC5565 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2038A [2SA2012/2SC5565] 4.5 1.6 1.5 Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2012 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2×0.8mm) Tc=25˚C 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Conditions Ratings (–30)40 (–)30 (–)5 (–)5 (–)8 (–)600 1.3 3.5 150 –55 to +150 Unit V V V A A mA W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=(–)30V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)500mA VCE=(–)10V, IC=(–)500mA VCB=(–)10V, f=1MHz 200 (350) 420 (30)20 Conditions Ratings min typ max (–)0.1 (–)0.1 560 MHz MHz pF Unit µA µA Continued on next page. Marking : 2SA2012 : AS 2SC5565 : FB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS (KOTO) TA-2520 No.6306–1/5 2SA2012/2SC5565 Continued on preceding page. Parameter Symbol Conditions IC=(–)1.5A, IB=(–)30mA IC=(–)2.5A, IB=(–)125mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time VBE(sat) IC=(–)1.5A, IB=(–)30mA (–30) 40 (–)30 (–)5 (50)30 (270) 300 (25)15 Ratings min typ (–140) 125 (–)170 (–)0.83 max (–210) 190 (–)260 (–)1.2 Unit mV mV mV V V V V V ns ns ns ns Collector-to-Emitter Saturation Voltage VCE(sat) V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO ton tstg tf IE=(–)10µA, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR 50Ω RB + 100µF + 470µF IB1 IB2 OUTPUT 24Ω VBE=--5V VCC=12V 20IB1= --20IB2= IC=500mA (For PNP, the polarity is reversed.) --5 IC -- VCE 2SA2012 0 --1 0m A 5 IC -- VCE 2SC5565 90mA 10 0m A Collector Current, IC – A --40mA --3 Collector Current, IC – A --4 --90mA --80mA --70mA --60mA --50mA --30mA --20mA 4 80mA 70mA 60mA 50mA 40mA 30mA 3 --2 2 20mA 10mA --10mA --1 1 0 0 --0.2 --0.4 --0.6 --0.8 IB=0 --1.0 IT00134 0 0 IB=0 0.2 0.4 0.6 0.8 1.0 IT00135 Collector-to-Emitter Voltage, VCE – V --5.0 --4.5 Collector-to-Emitter Voltage, VCE – V 5.0 IC -- VBE 2SA2012 VCE=--2V Collector Current, IC – A IC -- VBE 2SC5565 VCE=2V 4.5 4.0 3.5 3.0 2.5 2.0 1.5 Collector Current, IC – A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 25°C 25°C Ta=7 5°C --25°C --0.5 0 0 --0.2 --0.4 0.5 0 --1.0 --1.2 --1.4 0 0.2 0.4 --0.6 --0.8 0.6 0.8 --25°C 1.0 --1.0 1.0 Ta=7 5°C 1.2 1.4 IT00137 Base-to-Emitter Voltage, VBE – V IT00136 Base-to-Emitter Voltage, VBE – V No.6306–2/5 2SA2012/2SC5565 1000 7 5 hFE -- IC 2SA2012 VCE=--2V Ta=75°C 1000 7 5 hFE -- IC Ta=75°C --25°C 2SC5565 VCE=2V DC Current Gain, hFE 2 25°C --25°C DC Current Gain, hFE 3 3 2 25°C 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A --1000 7 5 7 --10 IT00138 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC – A 1000 5 7 10 IT00139 VCE(sat) -- IC 2SA2012 IC / IB=20 VCE(sat) -- IC 2SC5565 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 5 3 2 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 7 5 3 2 100 7 5 3 2 --100 7 5 3 2 --10 7 5 --0.01 Ta 5°C =7 --2 5°C 25°C = Ta °C 75 °C 25°C 5 --2 10 7 5 0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A --1000 7 5 7 --10 IT00140 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC – A 1000 7 5 7 10 IT00142 VCE(sat) -- IC 2SA2012 IC / IB=50 VCE(sat) -- IC 2SC5565 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 5 3 2 5 3 2 --100 7 5 3 2 100 7 5 3 2 C 75° Ta= °C --25 25°C = Ta °C --25 2 3 5 7 0.1 °C 75 25°C --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A --10 7 5 7 --10 IT00141 10 0.01 2 3 5 7 1.0 2 3 VBE(sat) -- IC Collector Current, IC – A 10 7 5 7 10 IT00143 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE (sat) – V 3 2 Base-to-Emitter Saturation Voltage, VBE (sat) – V 5 2SA2012 IC / IB=50 2SC5565 IC / IB=50 5 3 2 --1.0 7 5 3 2 Ta=--25°C 75°C 25°C 1.0 7 5 3 2 Ta=--25°C 75°C 25°C --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 5 7 --10 IT00144 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC – A 5 7 10 IT00145 No.6306–3/5 2SA2012/2SC5565 5 3 Cob -- VCB 2SA2012 f=1MHz Output Capacitance, Cob – pF 5 3 2 100 7 5 3 2 10 7 5 3 2 5 7 0.1 Cob -- VCB 2SC5565 f=1MHz Output Capacitance, Cob – pF 2 100 7 5 3 2 10 7 5 3 2 5 7 --0.1 2 3 Collector-to-Base Voltage, VCB -- V 5 7 --1.0 2 3 5 7 --10 2 3 5 2 3 5 IT00146 1000 Collector-to-Base Voltage, VCB -- V 7 1.0 2 3 5 7 10 2 3 5 IT00147 1000 f T -- IC 2SA2012 VCE=--10V f T -- IC 2SC5565 VCE=10V Gain-Bandwidth Product, fT – MHz 5 3 2 Gain-Bandwidth Product, fT – MHz 7 7 5 3 2 100 7 5 3 2 100 7 5 3 2 10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 Collector Current, IC – A 2 10 7 5 5 7 --10 IT00148 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC – A 2.0 5 7 10 IT00149 ASO ICP IC DC PC -- Ta 2SA2012 / 2SC5565 100ms Collector Dissipation, PC – W Collector Current, IC – A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 1ms ms 50 10 s 0µ s 0µ 1.5 1.3 op M era ou tio nte n 1.0 do na ce ram ic bo ard 0.01 2SA2012 / 2SC5565 Tc=25°C Single pulse For PNP, the polarity is reversed. 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.5 (25 0m m2 ×0 .8m m) 140 160 0 0 20 40 60 80 100 120 IT00150 0.1 Collector-to-Emitter Voltage, VCE – V 4.0 3.5 Ambient Temperature, Ta – ˚C IT00151 PC -- Tc 2SA2012 / 2SC5565 Collector Dissipation, PC – W 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc – ˚C IT01532 No.6306–4/5 2SA2012/2SC5565 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice. PS No.6306–5/5