2SC5611

Ordering number:ENN6336 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2023/2SC5611 60V / 5A High-Speed Switching Applications Applications · Various inductance lamp drivers for electrical equipment. · Inverters, converters (strobes, flash, fluorescent lamp lighting circuit). · Power amplifier (high-power car stereo, motor control). · High-speed switching (switching regulater, driver circuit). Package Dimensions unit:mm 2165 [2SA2023/2SC5611] 8.0 1.0 4.0 1.0 1.4 3.3 3.0 Features · Low collector-to-emitter saturation voltage. · Excellent dependence of hFE on current. · High-speed switching. · Micaless package facilitating mounting. 1.6 0.8 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Note * ( ) : 2SA2023 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg 4.8 Note : The emitter and base are reversely assigned to those of our standard products encapsulated in the TO126ML package. Conditions Ratings (–)80 (–)60 (–)5 (–)5 (–)7 1.3 Unit V V V A A W W 1.7 2.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO126ML Tc=25˚C 10 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT VCE(sat) VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)5V, IC=(–)1A IC=(–)2.5A, IB=(–)0.125A 110 100 (–)0.4 Conditions Ratings min typ max (–)0.1 (–)0.1 200 MHz V Unit mA mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13100TS (KOTO) TA-2336 No.6336–1/4 2SA2023/2SC5611 Continued on preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol V(BR)CBO IC=(–)1mA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO ton tstg tf IE=(–)1mA, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit Conditions Ratings min (–)80 (–)60 (–)5 0.1 0.5 0.1 typ max Unit V V V µs µs µs Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR 50Ω RB + 100µF VBE=--5V 20IB1=--20IB2=IC=2A + 470µF VCC=20V RL=10Ω IB1 IB2 OUTPUT (For PNP, the polarity is reversed.) --6 IC -- VBE 2SA2023 VCE=--2V Collector Current, IC – A 6 IC -- VBE 2SC5611 VCE=2V --5 5 Collector Current, IC – A --4 4 --3 3 C 20° Ta= 1 25°C --2 C 25°C --40° --1 1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT00512 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT00513 Base-to-Emitter Voltage, VBE – V 1000 7 5 Base-to-Emitter Voltage, VBE – V 1000 7 5 hFE -- IC 2SA2023 VCE=--2V Ta=120°C 25°C --40°C hFE -- IC 2SC5611 VCE=2V Ta=120°C 25°C --40°C DC Current Gain, hFE 2 DC Current Gain, hFE 3 3 2 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 Collector Current, IC – A 5 7 --1.0 2 3 5 7 --10 IT00514 10 0.01 2 3 5 7 0.1 2 3 Collector Current, IC – A 5 7 1.0 --40° 2 3 C 2 Ta= 1 20° C 5 7 10 IT00515 No.6336–2/4 2SA2023/2SC5611 1000 f T -- IC 2SA2023 VCE=--5V 1000 f T -- IC 2SC5611 VCE=5V Gain-Bandwidth Product, fT – MHz 5 3 2 Gain-Bandwidth Product, fT – MHz 7 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 100 7 5 3 2 10 0.01 Collector Current, IC – A 5 7 --1.0 2 3 5 7 --10 IT00516 2 3 5 7 0.1 2 3 Collector Current, IC – A 5 7 1.0 2 3 5 7 10 IT00517 Collector-to-Emitter Saturation Voltage, VCE (sat) – V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector-to-Emitter Saturation Voltage, VCE (sat) – V --100 7 5 3 2 VCE(sat) -- IC 2SA2023 IC / IB=--20 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.01 2 3 5 VCE(sat) -- IC 2SC5611 IC / IB=20 Collector Current, IC – A 2 --10 7 5 5 7 --10 IT00518 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC – A 2 5 7 10 IT00519 ASO ICP IC DC DC op ASO ICP IC DC 10µs Collector Current, IC – A Collector Current, IC – A 100µs 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10µs 100µs s 0µ 50 s 0µ 50 ms 10 s 0m 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ms 10 ms 0 10 op DC op era 10 era op tio era nT era tio c= 1ms 25 °C tio nT a= tio nT 25 °C nT a= c= 1ms 25 °C 25 °C --0.01 --0.1 2SA2023 Ta=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100 2 0.01 0.1 2SC5611 Ta=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 Collector-to-Emitter Voltage, VCE – V 1.4 1.3 1.2 IT00520 12 Collector-to-Emitter Voltage, VCE – V IT00521 PC -- Ta 2SA2023 / 2SC5611 Collector Dissipation, PC – W PC -- Tc 2SA2023 / 2SC5611 Collector Dissipation, PC – W 10 1.0 0.8 N o 8 0.6 he at sin k 6 4 0.4 0.2 0 0 20 40 60 80 100 120 140 160 2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C IT00522 Case Temperature, Tc – ˚C IT01783 No.6336–3/4 2SA2023/2SC5611 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2000. Specifications and information herein are subject to change without notice. PS No.6336–4/4