Ordering number : ENN6913
2SA2040/2SC5707
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2040 / 2SC5707
High Current Switching Applications
Applications
Package Dimensions
DC-DC converter, relay drivers, lamp drivers,
motor drivers, strobes.
unit : mm
2045B
[2SA2040 / 2SC5707]
1.5
5.5
0.85
0.7
1.2
7.5
0.8
1.6
0.6
0.5
1
2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
3
2.3
SANYO : TP
2.3
Package Dimensions
unit : mm
2044B
[2SA2040 / 2SC5707]
6.5
5.0
4
2.3
0.5
0.5
0.85
1
0.6
2.3
2
1.2
•
0.5
1.5
•
2.3
7.0
•
5.5
•
Adoption of FBET, MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
0.8
•
6.5
5.0
4
7.0
Features
2.5
•
3
1.2
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30101 TS IM TA-3233 No.6913-1/5
2SA2040/2SC5707
Specifications
Note*( ) : 2SA2040
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--50)80
V
Collector-to-Emitter Voltage
VCES
(--50)80
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
(--)8
A
(--)11
A
Base Current
IC
ICP
IB
(--)2
A
Collector Dissipation
PC
Collector Current
Collector Current (Pulse)
Junction Temperature
Tj
Storage Temperature
Tstg
1.0
W
15
W
150
°C
−55 to +150
°C
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
hFE
DC Current Gain
Gain-Bandwidth Product
fT
Output Capacitance
Cob
Conditions
VCE=(--)2V, IC=(--)500mA
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)2A, IB=(--)40mA
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CES
V(BR)CEO
IC=(--)10µA, IE=0
IC=(--)100µA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IC=(--)1mA, RBE=∞
IE=(--)10µA, IC=0
Unit
(--)0.1
µA
(--)0.1
µA
560
(290)330
VCB=(--)10V, f=1MHz
VCE(sat)
Storage Time
max
200
VCE=(--)10V, IC=(--)500mA
Collector-to-Emitter Saturation Voltage
Fall Time
typ
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
IC=(--)3.5A, IB=(--)175mA
IC=(--)2A, IB=(--)40mA
Turn-On Time
Ratings
min
MHz
(50)28
pF
(--230)160 (--390)240
mV
(--240)110 (--400)170
mV
(--)0.83
(--)1.2
V
(--50)80
V
80
V
(--)50
V
(--)6
V
ton
tstg
See specified test circuit.
(40)30
ns
See specified test circuit.
(225)420
ns
tf
See specified test circuit.
25
ns
Swicthing Time Test Circuit
PW=20µs
D.C.≤1%
IB1
IB2
OUTPUT
INPUT
VR
50Ω
RB
+
100µF
RL
+
470µF
VBE= --5V
VCC=25V
20IB1= --20IB2= IC=2.5A
For PNP, the polarity is reversed.
No.6913-2/5
2SA2040/2SC5707
IC -- VCE
A
--50m
A
m
0
4
---30mA
--5
mA
0
0
--1
--4
--20mA
--3
--10mA
--2
--1
--0.4
--0.8
--1.2
--1.6
Collector-to-Emitter Voltage, VCE -- V
3
10mA
2
--4
Ta=
75°
25°C C
--25°
C
--3
--1
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE -- V
IT00207
IC -- VBE
8
2SC5707
VCE=2V
7
Collector Current, IC -- A
--5
--2
0.4
0
IT00206
--6
IB=0
2SC5707
0
2SA2040
VCE= --2V
--7
Collector Current, IC -- A
20mA
--2.0
IC -- VBE
--8
6
5
4
3
2
1
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V
--1.4
0
2SA2040
VCE= --2V
5
100
7
5
Ta=75°C
3
25°C
--25°C
2
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
10
0.01
5 7 --10
IT00210
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2SA2040
IC / IB=20
3
2
--100
7
5
5°C
Ta=7
°C
--25
3
2
5°C
2
--10
7
5
3
2
--1.0
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
IT00212
2SC5707
VCE=2V
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
VCE(sat) -- IC
1.4
IT00209
5
2
5 7 --0.1
1.2
7
3
3
1.0
100
2
2
0.8
hFE -- IC
5
3
10
--0.01
0.6
7
DC Current Gain, hFE
Ta=75°C
25°C
--25°C
2
0.4
Base-to-Emitter Voltage, VBE -- V
1000
7
3
0.2
IT00208
hFE -- IC
1000
DC Current Gain, hFE
4
Ta=7
5°C
25°C
--25°
C
0
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
1
IB=0
0
--1000
7
5
70mA
60mA
50mA
40mA
30mA
80mA
90mA
6
mA
Collector Current, IC -- A
--6
IC -- VCE
7
--90mA
--80mA
--70mA
--60mA
100
2SA2040
Collector Current, IC -- A
--7
5 7 10
IT00211
VCE(sat) -- IC
1000
7
5
2SC5707
IC / IB=20
3
2
100
7
5
5°C
3
2
7
Ta=
--25°
10
7
5
°C
25
C
3
2
1.0
0.01
2
3
5 7 0.1
2
3
5 7 1.0
Collector Current, IC -- A
2
3
5 7 10
IT00214
No.6913-3/5
2SA2040/2SC5707
VCE(sat) -- IC
3
2
--1000
7
5
3
2
5°C
--100
7
5
7
Ta=
--25°C
3
2
--10
--0.01
2
3
5 7 --0.1
2
25°C
3
5 7 --1.0
2
3
VBE(sat) -- IC
7
5
3
2
Ta= --25°C
7
5
75°C
25°C
3
--100
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
100
7
5
5
Ta=7
3
2
°C
25°C
C
--25°
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT00215
VBE(sat) -- IC
2SC5707
IC / IB=50
7
5
3
2
1000
Ta= --25°C
7
5
75°C
25°C
3
100
0.01
5 7 --10
IT00216
Collector Current, IC -- A
2
3
5 7 0.1
3
5 7 1.0
2
3
2SA2040
f=1MHz
2SC5707
f=1MHz
3
Output Capacitance, Cob -- pF
2
100
7
5
3
2
10
7
5
5 7 10
IT00217
Cob -- VCB
5
3
2
Collector Current, IC -- A
Cob -- VCB
5
Output Capacitance, Cob -- pF
3
2
2
2
3
2
100
7
5
3
2
10
7
5
3
2
2
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
Collector-to-Base Voltage, VCB -- V
3
5 7 0.1
5
3
2
100
7
5
3
2
10
5 7 1.0
2
3
5 7 10
2
3
5
IT00219
f T -- IC
2SC5707
VCE=10V
7
Gain-Bandwidth Product, f T -- MHz
5
3
1000
2SA2040
VCE= --10V
7
2
Collector-to-Base Voltage, VCB -- V
IT00218
f T -- IC
1000
Gain-Bandwidth Product, f T -- MHz
1000
7
5
10000
2SA2040
IC / IB=50
--1000
3
2
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
--10000
2SC5707
IC / IB=50
10
0.01
5 7 --10
IT00213
Collector Current, IC -- A
VCE(sat) -- IC
10000
7
5
2SA2040
IC / IB=50
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
--10000
7
5
5
3
2
100
7
5
3
2
10
5 7--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
IT00220
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
Collector Current, IC -- A
2
3
5 7 10
IT00221
No.6913-4/5
2SA2040/2SC5707
ASO
2
1.0
7
5
3
2
0.1
7
5
3
2
2SA2040 / 2SC5707
Tc=25°C
Single Puls
For PNP, the minus sign(--)is omitted
0.01
0.1
2
3
5 7 1.0
2
3
1.0
0.8
No
0.6
he
at
sin
k
0.4
0.2
0
5 7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
5 7 100
IT02971
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT02972
PC -- Tc
18
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
Collector Current, IC -- A
3
2
2SA2040 / 2SC5707
s
0µ
10
7
5
10
100ms 10ms
50
1m 0µs
IC=8A
DC
s
Op
era
DC
tio
Op
n(
era
Tc
tio
=2
n(
5°
Ta
C)
=2
5°
C)
PC -- Ta
1.2
ICP=11A
2SA2040 / 2SC5707
16
15
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT02973
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2001. Specifications and information herein are subject to
change without notice.
PS No.6913-5/5
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.