2SC5960

Ordering number : ENN7610 2SC5960 NPN Triple Diffused Planar Silicon Transistor 2SC5960 Switching Regulator Applications Features • • • • Package Dimensions unit : mm 2022A [2SC5960] 15.6 14.0 3.2 4.8 High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 2.6 1.6 2.0 1.3 20.0 1.2 15.0 20.0 3.5 2.0 0.6 1.0 1 0.6 2 3 1.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Ratings 500 400 7 7 Unit V V V A A A W W °C °C Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, Duty Cycle≤10% Conditions 5.45 5.45 14 3 2.5 Tc=25°C 60 150 --55 to +150 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=400V, IE=0 VEB=5V, IC=0 Ratings min typ max 10 10 Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31504KB TS IM TA-100660 No.7610-1/4 2SC5960 Continued from preceding page. Parameter Symbol hFE1 hFE2 hFE3 VCE(sat) VBE(sat) fT Cob V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf M 20 to 40 N 30 to 50 Conditions VCE=5V, IC=0.8A VCE=5V, IC=4A VCE=5V, IC=1mA IC=4A, IB=0.8A IC=4A, IB=0.8A VCE=10V, IC=0.8A VCB=10V, f=1MHz IC=1mA, IE=0 IC=5mA, RBE=∞ IE=1mA, IC=0 IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V 500 400 7 0.5 2.5 0.3 Ratings min 20* 10 10 0.8 1.5 15 50 V V MHz pF V V V µs µs µs typ max 50* Unit DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time * : The hFE1 of the 2SC5960 is classified as follows. Rank hFE Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω + 100µF VBE= --5V + 470µF VCC=200V RB RL 10 9 IC -- VCE 70 mA 00 0mA 8 IC -- VBE(on) VCE=5V Collector Current, IC -- A Collector Current, IC -- A 8 7 6 5 4 3 2 1 0 0 900mA 800mA 1000mA 7 6 5 4 3 2 1 6 500mA 400mA 300mA 200mA 100mA Ta=1 2 0.2 0.4 0.6 0°C 25°C IB=0 1 2 3 4 5 6 7 8 9 10 0 0 0.8 1.0 1.2 1.4 IT05149 Collector-to-Emitter Voltage, VCE -- V 100 7 5 IT05057 1.0 hFE -- IC Base-to-Emitter ON-State Voltage, VBE(on) -- V VCE(sat) -- IC --40°C VCE=5V 7 IC / IB=5 0° --4 0°C C DC Current Gain, hFE 3 3 25°C 0.1 7 5 3 2 0.01 0.01 2 --40°C Ta= --40°C 120°C 10 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT05151 2 3 5 7 0.1 2 3 Ta = 25°C 2 12 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT05152 No.7610-2/4 25° C Ta=120°C Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 2SC5960 3 VBE(sat) -- IC IC / IB=5 10 7 5 SW Time -- IC VCC=200V IC/IB=5 IB2/IB1= --2.5 R load Base-to-Emitter Saturation Voltage, VBE(sat) -- V Switching Time, SW Time -- µs 2 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.1 2 3 5 7 tstg 1.0 7 25°C Ta= --40°C tf 120°C 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Forward Bias A S O ICP=14A IC=7A ≤50µs 10 s 0µ Collector Current, IC -- A 5 7 10 IT05150 1.0 2 3 5 3 2 10 Reverse Bias A S O ICP Collector Current, IC -- A 7 10 IT05923 Collector Current, IC -- A Collector Current, IC -- A 7 5 3 2 1.0 7 5 3 2 10 ms on ati er DC op 1m S/ s B Li mi ted 0.01 1.0 Tc=25°C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 5 7 0.1 1.0 Tc=25°C IB2= --1.2A Const. L=500µH 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05063 Collector-to-Emitter Voltage, VCE -- V 3.0 IT06395 PC -- Ta Collector-to-Emitter Sustain Voltage, VCEX(sus) -- V 70 PC -- Tc Collector Dissipation, PC -- W Collector Dissipation, PC -- W 2.5 60 50 2.0 No 1.5 he 40 at sin k 30 1.0 20 0.5 10 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 0 Ambient Temperature, Ta -- °C IT05863 Case Temperature, Tc -- °C IT05864 No.7610-3/4 2SC5960 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS No.7610-4/4