2SC5979

Ordering number : ENN8070 2SC5979 2SC5979 Applications • NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings 100 100 50 6 5 7.5 1.2 0.8 15 150 --55 to +150 Unit V V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA 250 Conditions Ratings min typ max 0.1 0.1 400 Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21405EA TS IM TB-00000319 No.8070-1/4 2SC5979 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=10V, IC=500mA VCB=10V, f=1MHz IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=100mA IC=10µA, IE=0 IC=100µA, RBE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 100 100 50 6 35 300 20 Ratings min typ 400 15 70 120 0.88 105 180 1.2 max Unit MHz pF mV mV V V V V V ns ns ns Package Dimensions unit : mm 2045B 6.5 5.0 4 1.5 Package Dimensions unit : mm 2044B 2.3 0.5 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.8 1.6 0.6 1 2 3 0.5 1 0.6 7.5 0.8 2 3 2.5 1.2 0.85 0.5 1.2 0.85 0.7 5.5 7.0 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 2.3 2.3 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR10 50Ω IB1 OUTPUT IB2 RB RL + + 470µF VCC=25V 100µF VBE= --5V IC=10IB1= --10IB2=1A No.8070-2/4 2SC5979 5.0 4.5 IC -- VCE 10 0 mA 5 IC -- VBE VCE=2V 80mA 60mA 40mA 30mA Collector Current, IC -- A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector Current, IC -- A 4.0 4 3 20mA 15mA 10mA 2 1 IB=0 0.9 1.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 IT08228 1000 7 hFE -- IC Base-to-Emitter Voltage, VBE -- V Ta= 75° C 25° C --25 °C 5mA IT08229 f T -- IC VCE=2V Gain-Bandwidth Product, f T -- MHz Ta=75°C --25°C 25°C VCE=10V 5 3 2 DC Current Gain, hFE 3 2 100 7 5 3 2 10 0.01 100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT08230 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 7 5 Cob -- VCB Collector Current, IC -- A 7 5 7 10 IT08231 VCE(sat) -- IC f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 5 3 2 IC / IB=20 3 2 0.1 7 5 3 2 = Ta °C 75 --2 C 5° 10 7 5 0.1 °C 25 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT08233 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 7 5 5 7 100 IT08232 0.01 0.01 VCE(sat) -- IC Collector Current, IC -- A 3 VBE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT08234 1.0 Ta= --25°C 75°C 7 5 75° Ta= C 5 --2 °C 25°C C 25° 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 57 IT08235 Collector Current, IC -- A Collector Current, IC -- A No.8070-3/4 2SC5979 2 10 7 5 ASO ICP=7.5A 10µs 10ms 1ms 50 0µ DC IC=5A s op er ati DC on op (T era c= tio 25 n( °C Ta ) =2 5° C) 100ms 1.0 0.9 PC -- Ta Collector Dissipation, PC -- W Collector Current, IC -- A 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 s 0µ 10 3 2 1.0 7 5 3 2 0.1 7 5 3 2 No he at sin k 0.01 0.1 Tc=25°C Single Pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 18 16 15 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 5 7 100 IT08236 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT02981 PC -- Tc Collector Dissipation, PC -- W 140 160 Case Temperature, Tc -- °C IT02982 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8070-4/4