2SC5990

Ordering number : ENN8118A 2SC5990 2SC5990 Applications • NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings 100 100 50 6 4 7 600 1.3 3.5 150 --55 to +150 Unit V V V V A A mA W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=500mA VCE=10V, IC=500mA Ratings min typ max 0.1 0.1 250 400 400 MHz Unit µA µA Marking : FH Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005 MS IM / 21405EA TS IM TB-00000376 No.8118-1/4 2SC5990 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=10V, f=1MHz IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=100mA IC=10µA, IE=0A IC=100µA, RBE=0Ω IC=1mA, RBE=∞ IE=10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 100 100 50 -6 35 300 20 Ratings min typ 15 65 110 0.88 100 165 1.3 max Unit pF mV mV V V V V V ns ns ns Package Dimensions unit : mm 7007-004 Top View 4.5 1.6 1.5 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR10 50Ω 2.5 1.0 4.0 IB1 IB2 OUTPUT RB + 100µF + 470µF RL=25Ω 1 0.4 0.5 1.5 2 3 0.4 VBE= --5V VCC=25V 10IB1= --10IB2= IC=1A 3.0 1 : Base 2 : Collector 3 : Emitter Bottom View SANYO : PCP 4.0 3.5 IC -- VCE 0m 80mA 4.0 IC -- VBE VCE=2V Collector Current, IC -- A 3.0 2.5 2.0 1.5 Collector Current, IC -- A 60mA 50mA 40mA A 10 3.5 3.0 2.5 2.0 1.5 1.0 0.5 30mA 20mA 15mA 10mA 5mA 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IB=0mA 0.8 0.9 1.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Collector-to-Emitter Voltage, VCE -- V IT09552 Base-to-Emitter Voltage, VBE -- V Ta= 75 --25°C IT08356 °C 25°C No.8118-2/4 2SC5990 7 5 hFE -- IC VCE=2V Gain-Bandwidth Product, fT -- MHz Ta=75°C 25°C 1000 7 5 3 2 fT -- IC VCE=10V DC Current Gain, hFE 3 2 --25°C 100 7 5 3 2 100 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 100 7 5 7 10 IT08357 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 Cob -- VCB f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector Current, IC -- A 5 3 2 IT08358 VCE(sat) -- IC IC / IB=20 Output Capacitance, Cob -- pF 5 3 2 0.1 7 5 3 2 10 7 5 0.1 = Ta °C 75 5°C --2 °C 25 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 1.0 7 5 7 100 IT08359 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 57 IT08360 VCE(sat) -- IC Collector Current, IC -- A 3 VBE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 1.0 7 0.1 7 5 3 2 Ta= --25°C 7 Ta= 5°C 75°C 5 5°C --2 C 25°C 25° 3 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 57 IT08361 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A 2 10 7 5 ASO Collector Current, IC -- A 1.4 IT08362 PC -- Ta ICP=7A IC=4A 10