2SC6081

Ordering number : ENA0278 2SC6081 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6081 Applications • 50V / 5A High-Speed Switching Applications High-speed switching applications (switching regulator, driver circuit). Features • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C PW≤10µs, duty cycle≤10% Conditions Ratings 60 60 50 6 5 8 1 2 20 150 --55 to +150 Unit V V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=125mA VCE=2V, IC=3.75A 200 50 Ratings min typ max 10 10 560 Unit µA µA Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 31506FA MS IM TB-00002090 No. A0278-1/4 2SC6081 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=10V, IC=0.7A VCB=10V, f=1MHz IC=2.5A, IB=125mA IC=2.5A, IB=125mA IC=100µA, IE=0A IC=100µA, RBE=0Ω IC=1mA, RBE=∞ IE=100µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 60 60 50 6 49 600 42 Ratings min typ 250 35 200 400 1.2 max Unit MHz pF mV V V V V V ns ns ns Package Dimensions unit : mm 7508-002 10.0 3.2 3.5 7.2 4.5 2.8 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR IB1 IB2 RB OUTPUT RL + + 470µF VCC=25V 16.0 50Ω 18.1 100µF 1.6 1.2 0.75 14.0 0.7 VBE= --5V 5.6 IC=20IB1= --20IB2=1.5A 123 2.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 2.55 2.55 70mA 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 IC -- VCE A A 30m 25m A 2.0 IC -- VCE 20mA 18mA 16mA 14mA 12m A 5mA 4mA 3mA 20mA 15mA 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Collector Current, IC -- A 100mA 90mA 80mA A 4 60m 0mA 5 45m A 35m 0mA Collector Current, IC -- A 10mA 10 A 9m mA 8 mA 2mA 5mA 1mA 2mA IB=0mA 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IB=0mA 0.8 0.9 1.0 Collector-to-Emitter Voltage, VCE -- V IT10562 Collector-to-Emitter Voltage, VCE -- V IT10563 No. A0278-2/4 2SC6081 6 IC -- VBE VCE=2V 1000 7 5 hFE -- IC Ta=75°C 25°C --25°C VCE=2V 5 Collector Current, IC -- A 4 DC Current Gain, hFE 1.0 1.2 IT10564 3 2 3 100 7 5 3 2 °C 25° C 2 1 0 0 0.2 0.4 0.6 0.8 Ta= 75 --25°C 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 Base-to-Emitter Voltage, VBE -- V 1000 7 5 hFE -- IC Collector Current, IC -- A 1000 7 IT10565 f T -- IC Ta=25°C VCE=10V Gain-Bandwidth Product, f T -- MHz V CE V 0.5 V 0.2 =2 5 3 2 DC Current Gain, hFE 3 2 .0V 1.0 V V 0.7 100 7 5 3 2 100 7 5 3 2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1000 7 IT10566 7 5 Cob -- VCB Collector Current, IC -- A 5 7 10 IT10567 VCE(sat) -- IC f=1MHz IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 5 3 2 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.01 100 7 5 3 2 10 0.1 = Ta °C 75 C 25° 5°C --2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 2 3 5 7 0.1 2 3 5 7 1.0 2 3 57 IT10569 Collector-to-Base Voltage, VCB -- V 7 5 IT10568 3 VCE(sat) -- IC Collector Current, IC -- A VBE(sat) -- IC IC / IB=50 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 2 0.1 7 5 3 2 1.0 °C 75 a= C T 5° --2 °C 25 7 Ta= --25°C 25°C 75°C 5 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 57 IT10570 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 Collector Current, IC -- A Collector Current, IC -- A IT10571 No. A0278-3/4 2SC6081 2 10 7 5 Forward Bias A S O ICP=8A Collector Dissipation, PC -- W 2.5 PC -- Ta 0 =5 PT Collector Current, IC -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IC=5A 10 0m s DC 2.0 s 1m s 0µ 1.5 No ms 10 n tio era op he at sin 1.0 k 0.5 0.01 0.1 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 0 5 7 100 IT10572 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V 25 Ambient Temperature, Ta -- °C IT10560 PC -- Tc Collector Dissipation, PC -- W 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C IT10573 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No. A0278-4/4