2SC6082

Ordering number : ENA0279 2SC6082 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 Applications • 50V / 15A High-Speed Switching Applications High-speed switching applications (switching regulator, driver circuit). Features • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C PW≤10µs, duty cycle≤10% Conditions Ratings 60 60 50 6 15 20 3 2 25 150 --55 to +150 Unit V V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=330mA VCE=2V, IC=10A 200 50 Ratings min typ max 10 10 560 Unit µA µA Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 31506FA MS IM TB-00002089 No. A0279-1/4 2SC6082 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=10V, IC=2A VCB=10V, f=1MHz IC=7.5A, IB=375mA IC=7.5A, IB=375mA IC=100µA, IE=0A IC=100µA, RBE=0Ω IC=1mA, RBE=∞ IE=100µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 60 60 50 6 52 560 37 Ratings min typ 195 85 200 400 1.2 max Unit MHz pF mV V V V V V ns ns ns Package Dimensions unit : mm 7508-002 10.0 3.2 3.5 7.2 4.5 2.8 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR IB1 IB2 RB OUTPUT RL + + 470µF VCC=25V 16.0 50Ω 18.1 100µF VBE= --5V 1.6 1.2 0.75 14.0 0.7 5.6 IC=20IB1= --20IB2=5A 123 2.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 2.55 2.55 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 IC -- VCE From a top 300mA 250mA 200mA 180mA 150mA 120mA 100mA 50mA 40mA 10 IC -- VCE 90 mA 9 8 7 6 5 4 3 mA 80 mA 50m A 40mA 30mA 20mA Collector Current, IC -- A Collector Current, IC -- A 70 30mA 60m A 15mA 20mA mA A 90mA 80m 70mA 60mA 10mA 100 10mA 5mA 2 1 IB=0mA 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IB=0mA 0.8 0.9 1.0 Collector-to-Emitter Voltage, VCE -- V IT10574 Collector-to-Emitter Voltage, VCE -- V IT10575 No. A0279-2/4 2SC6082 16 IC -- VBE VCE=2V 1000 7 5 hFE -- IC VCE=2V Ta=75°C 25°C --25°C 14 Collector Current, IC -- A DC Current Gain, hFE 1.0 1.2 IT10576 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 3 2 100 7 5 3 2 Ta= 75 25°C °C --25° C 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Base-to-Emitter Voltage, VBE -- V 1000 7 5 hFE -- IC Collector Current, IC -- A 1000 7 IT10577 f T -- IC Ta=25°C VCE=10V Gain-Bandwidth Product, f T -- MHz 5 3 2 DC Current Gain, hFE 3 2 V CE 0.5 V =2 .0 V 1.0V 0.2V 100 7 5 3 2 100 7 5 3 2 0.7V 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1000 7 IT10578 7 Cob -- VCB Collector Current, IC -- A 5 7 10 IT10579 VCE(sat) -- IC f=1MHz 5 IC / IB=20 Output Capacitance, Cob -- pF 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 0.1 7 5 3 2 100 7 5 3 2 = Ta 75 °C --2 C 5° 0.01 7 5 0.01 °C 25 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 Collector-to-Base Voltage, VCB -- V 7 5 IT10580 3 VCE(sat) -- IC Collector Current, IC -- A IT10581 VBE(sat) -- IC IC / IB=50 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 2 1.0 7 5 0.1 7 Ta= --25°C 75°C 3 2 °C 25 --2 = Ta 5° C 5 °C 75 25°C 3 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 2 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 IT10583 Collector Current, IC -- A IT10582 Collector Current, IC -- A No. A0279-3/4 2SC6082 5 3 2 Forward Bias A S O ICP=20A Collector Dissipation, PC -- W IC=15A 10 0m s 2.5 PC -- Ta Collector Current, IC -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2.0 1m s DC op =5 PT µs 00 ms 10 ion 1.5 No he at sin t era k 1.0 0.5 0.01 0.1 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 0 5 7 100 IT10584 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V 30 Ambient Temperature, Ta -- °C IT10560 PC -- Tc Collector Dissipation, PC -- W 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C IT10561 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No. A0279-4/4