2SC6095

Ordering number : ENA0411 2SC6095 2SC6095 Applications • NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings 120 120 80 6.5 2.5 4 500 1.3 3.5 150 --55 to +150 Unit V V V V A A mA W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=70V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA Ratings min typ max 1 1 300 600 Unit µA µA Marking : QF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 53006EA MS IM TB-00002345 No. A0411-1/4 2SC6095 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=10V, IC=500mA VCB=10V, f=1MHz IC=1A, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=10µA, IE=0A IC=100µA, RBE=0Ω IC=1mA, RBE=∞ IE=10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 120 120 80 6.5 40 920 32 Ratings min typ 350 14 100 90 0.9 150 135 1.2 max Unit MHz pF mV mV V V V V V ns ns ns Package Dimensions unit : mm 7007A-004 Top View 4.5 1.6 1.5 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR10 50Ω IB1 OUTPUT IB2 RB RL + + 470µF VCC=40V 2.5 1.0 4.0 100µF VBE= --5V 1 0.4 0.5 1.5 2 3 0.4 10IB1= --10IB2=IC=0.5A 3.0 0.75 1 : Base 2 : Collector 3 : Emitter Bottom View SANYO : PCP No. A0411-2/4 2SC6095 2.0 IC -- VCE A 80mA 60mA 2.5 IC -- VBE VCE=5V 40m A 20mA 2.0 Collector Current, IC -- A 100m 1.2 10mA 5mA Collector Current, IC -- A 1.6 1.5 0.8 1.0 C 0.5 0 0 0.2 0.4 2mA 0.4 1mA 0 0 0.2 0.4 0.6 0.8 IB=0mA 1.0 IT11070 Ta=75 ° 0.6 --25°C 0.8 25°C 1.0 1.2 IT11071 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 hFE -- IC Ta=75°C 25°C --25°C Base-to-Emitter Voltage, VBE -- V 1000 f T -- IC VCE=5V Gain-Bandwidth Product, f T -- MHz 7 5 3 2 VCE=10V DC Current Gain, hFE 3 2 100 7 5 3 2 10 0.01 100 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 100 7 IT11072 5 Cob -- VCB Collector Current, IC -- A IT11073 VCE(sat) -- IC f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 IC / IB=10 Output Capacitance, Cob -- pF 5 3 2 0.1 7 5 3 2 0.01 7 5 = Ta °C 75 10 7 5 3 0.1 C 5° --2 25 °C 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 3 2 5 7 100 IT11074 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 VCE(sat) -- IC Collector Current, IC -- A 3 IT11075 VBE(sat) -- IC IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=10 0.1 7 5 3 2 1.0 Ta= --25°C 75°C = Ta °C 75 7 5 -25 °C °C 25 25°C 3 2 0.01 0.01 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A IT11076 Collector Current, IC -- A IT11077 No. A0411-3/4 2SC6095 7 5 3 2 ASO ICP=4A IC=2.5A 100ms