2SC6096

Ordering number : ENA0434 2SC6096 SANYO Semiconductors DATA SHEET 2SC6096 Applications • NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings 120 120 100 6.5 2 3 400 1.3 3.5 150 --55 to +150 Unit V V V V A A mA W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=80V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA 300 Ratings min typ max 1 1 600 Unit µA µA Marking : QG Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82306 / 62006EA MS IM TB-00002425 No. A0434-1/4 2SC6096 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=10V, IC=300mA VCB=10V, f=1MHz IC=1A, IB=100mA IC=1A, IB=100mA IC=10µA, IE=0A IC=100µA, RBE=0Ω IC=1mA, RBE=∞ IE=10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 120 120 100 6.5 40 1100 40 Ratings min typ 300 13 100 0.85 150 1.2 max Unit MHz pF mV V V V V V ns ns ns Package Dimensions unit : mm 7007A-004 Top View 4.5 1.6 1.5 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR10 50Ω 1.0 IB1 OUTPUT IB2 RB RL + 100µF VBE= --5V 0.4 + 470µF VCC=50V 2.5 1 0.4 0.5 1.5 2 3 4.0 10IB1= --10IB2=IC=0.5A 3.0 0.75 1 : Base 2 : Collector 3 : Emitter Bottom View SANYO : PCP 2.0 1.8 IC -- VCE mA 2.0 IC -- VBE VCE=5V 80mA 60mA Collector Current, IC -- A 1.8 1.6 1.4 1.2 1.0 0.8 Collector Current, IC -- A 1.6 1.4 1.2 1.0 100 40mA 20mA 10mA 0.8 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 2mA 0.4 0.2 IB=0mA 0.9 1.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT11116 Collector-to-Emitter Voltage, VCE -- V IT11115 Base-to-Emitter Voltage, VBE -- V 25°C --25°C 0.6 Ta=75 °C 5mA No. A0434-2/4 2SC6096 1000 7 5 hFE -- IC Gain-Bandwidth Product, f T -- MHz Ta=75°C 25°C --25°C 7 f T -- IC VCE=10V VCE=5V 5 3 2 DC Current Gain, hFE 3 2 100 7 5 100 7 5 3 2 0.01 2 3 5 7 2 3 5 7 2 3 3 2 0.01 0.1 1.0 2 3 5 7 0.1 2 3 5 7 Collector Current, IC -- A 100 7 IT11117 3 Cob -- VCB Collector Current, IC -- A 2 1.0 IT11118 VCE(sat) -- IC f=1MHz 5 2 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 0.1 7 5 3 2 3 2 Ta= 75 °C 5°C --2 10 7 5 3 0.1 0.01 7 5 3 0.01 25° C 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 3 5 7 100 IT11119 2 3 5 7 0.1 2 3 5 7 1.0 2 3 VBE(sat) -- IC Collector Current, IC -- A 5 IT11120 ASO 10 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 2 ICP=3A s m 0µ 8m 50 s 0. 2! 1m s C) m 5° m 0m =2 50 10 (2 Tc ) rd n( io °C oa at 25 c b er a= i op (T am C n er D io a c at er on op ted C D oun M