2SC6106

Ordering number : ENA0878 2SC6106 SANYO Semiconductors DATA SHEET 2SC6106 Features • • • • NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage and high reliability. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg PW≤300µs, duty cycle≤10% Tc=25°C Conditions Ratings 1000 500 7 4 8 1 30 150 --55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=500V, IE=0A VEB=5V, IC=0A VCE=5V, IC=0.3A VCE=5V, IC=2.0A VCE=10V, IC=0.3A VCB=10V, f=1MHz 40 8 18 40 MHz pF Ratings min typ max 10 10 80 Unit µA µA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70407KB TI IM TC-00000387 No. A0878-1/4 2SC6106 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A IC=1mA, IE=0A IC=5mA, RBE=∞ IE=1mA, IC=0A VCC=200V, 5IB1=-2.5IB2=IC=2A, RL=100Ω VCC=200V, 5IB1=-2.5IB2=IC=2A, RL=100Ω VCC=200V, 5IB1=-2.5IB2=IC=2A, RL=100Ω 1000 500 8 0.5 3.0 0.3 Ratings min typ max 1.0 1.5 Unit V V V V V µs µs µs Package Dimensions unit : mm (typ) 7518-003 6.5 5.0 2.3 1.5 Package Dimensions unit : mm (typ) 7003-003 6.5 5.0 2.3 0.5 4 4 7.0 1.5 0.5 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 to 0.2 1.2 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit IB1 OUTPUT IB2 VR RB PW=20µs D.C.≤1% INPUT RL 100Ω + 470µF VCC=200V 50Ω + 100µF VBE= --5V 4.0 3.5 IC -- VCE 500mA 400mA Collector Current, IC -- A 4 IC -- VBE VCE=5V Collector Current, IC -- A 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 300mA 200mA 100mA 50mA 20mA 3 2 1 Ta= 120 °C 25°C IB=0mA 9 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT12742 Collector-to-Emitter Voltage, VCE -- V IT12741 Base-to-Emitter Voltage, VBE -- V --40°C No. A0878-2/4 2SC6106 2 hFE -- IC VCE=5V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 5 3 2 1.0 7 5 3 2 0.1 7 5 VCE(sat) -- IC IC / IB=5 100 7 Ta=120°C DC Current Gain, hFE 5 3 2 --40°C 10 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 57 IT12743 Ta= -4 0°C --4 C 25° C 0° 120°C 25°C 2 3 5 7 0.1 2 3 5 3 2 0.01 7 1.0 Ta=1 20°C 2 3 5 25°C 7 Collector Current, IC -- A 3 VBE(sat) -- IC Collector Current, IC -- A 10 7 5 IT12744 SW Time -- IC IC / IB=5 Switching Time, SW Time -- µs Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 2 1.0 7 5 3 2 0.1 7 5 tstg VCC=200V IC/IB2= 5 IB2/IB1= 2.5 1.0 7 5 Ta= --40°C 25°C 120°C tf 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 10 7 5 Forward Bias A S O ICP=8A IC=4A P C= 30 1m Collector Current, IC -- A 5 7 10 IT12745 3 0.1 2 3 5 7 1.0 2 3 5 2 Reverse Bias A S O Collector Current, IC -- A 7 10 IT12746