2SD1060

Ordering number : EN686J 2SB824 / 2SD1060 SANYO Semiconductors DATA SHEET 2SB824 / 2SD1060 Applications • PNP / NPN Epitaxial Planar Silicon Transistors 50V / 5A Switching Applications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Features • Low collector-to-emitter saturation voltage : VCE(sat)= (-)0.4V max / IC= (-)3A, IB= (-)0.3A. Specifications ( ) : 2SB824 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings (--)60 (--)50 (--)6 (--)5 (--)9 1.75 30 150 --55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)40V, IE=0A VEB=(-)4V, IC=0A Ratings min typ max (--)0.1 (--)0.1 Unit mA mA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’ s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82207FA TI IM TC-00000844 / 913003TN(KT)/91098HA(KT)/D251MH/4017KI No.686-1/5 2SB824 / 2SD1060 Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol hFE1 hFE2 fT Cob VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=(-)2V, IC=(--)1A VCE=(-)2V, IC=(--)3A VCE=(-)5V, IC=(--)1A VCB=(-)10V, f=1MHz IC=(--)3A, IB=(--)0.3A IC=(--)1mA, IE=0A IC=(--)1mA, RBE=∞ IE=(-)1mA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--)60 (--)50 (--)6 0.1 (0.7)1.4 0.2 Ratings min 70* 30 30 (160)100 (--)0.4 MHz pF V V V V μs μs μs typ max 280* Unit * : The 2SB824 / 2SD1060 are classified by 1A hFE as follows : Rank Q R S hFE 70 to 140 100 to 200 140 to 280 Package Dimensions unit : mm (typ) 7507-001 10.2 5.1 4.5 3.6 1.3 Switching Time Test Circuit PW=20μs tr, tf ≤15ns INPUT VR 100Ω 50Ω + 1μF VBE= --5V + 1μF VCC=20V IB1 OUTPUT IB2 RB 1Ω 6.3 RL 10Ω 2.7 18.0 (5.6) 1.2 15.1 14.0 IC=10IB1= --10IB2=2A For PNP, the polarity is reversed. 0.4 0.8 123 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220 2.55 2.55 --10 IC -- VCE A 2SB824 mA A A 50 00m 50m --300m mA --4 --4 --3 --250mA 00 --5 --200mA --150mA 2.7 10 IC -- VCE mA 45 0m A 2SD1060 AA 0m 0m mA A 40 35 300 250m 200mA Collector Current, IC -- A Collector Current, IC -- A --8 8 500 150mA 100mA --6 --100mA --50mA 6 50mA 4 --4 --2 2 0 0 --0.4 --0.8 --1.2 --1.6 IB=0mA --2.0 --2.4 ITR08435 0 0 0.4 0.8 1.2 1.6 IB=0mA 2.0 2.4 ITR08436 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No.686-2/5 2SB824 / 2SD1060 --10 --9 --8 --7 --6 --5 --4 --3 --2 --1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IC -- VBE 2SB824 VCE= --2V 10 9 8 IC -- VBE 2SD1060 VCE=2V Collector Current, IC -- A Collector Current, IC -- A 7 6 5 Ta= 80°C 25°C Ta=8 0°C 25°C 0 0.2 0.4 0.6 0.8 --20°C 4 3 2 1 0 --20°C 1.0 1.2 1.4 Base-to-Emitter Voltage, VBE -- V 1000 7 5 ITR08437 1000 7 5 hFE -- IC Base-to-Emitter Voltage, VBE -- V ITR08438 hFE -- IC 2SB824 VCE= --2V Ta=80°C 25°C --20°C 2SD1060 VCE=2V Ta=80°C DC Current Gain, hFE DC Current Gain, hFE 3 2 3 2 25°C --20°C 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 Collector Current, IC -- A --10 5 --10 2 ITR08439 10 0.01 2 3 5 0.1 2 3 5 1.0 2 3 5 VCE(sat) -- IC Collector Current, IC -- A 10 2 10 ITR08440 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SB824 IC / IB=10 5 3 2 1.0 5 3 2 0.1 5 3 2 0.01 2 3 5 2SD1060 IC / IB=10 3 2 --1.0 5 3 2 --0.1 5 3 2 2 3 5 °C 25 C 80° Ta= °C --20 °C 25 8 Ta= 0°C C --20° 0.1 2 3 5 1.0 2 3 5 2 10 ITR08442 --0.01 --0.1 2 3 5 --1.0 2 3 5 Collector Current, IC -- A --10 5 2 --10 ITR08441 10 5 VCE(sat) -- IC Collector Current, IC -- A VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --1.0 5 3 2 --0.1 5 3 2 2 3 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SB824 IC / IB=20 2SD1060 IC / IB=20 3 2 1.0 5 3 2 0.1 5 3 2 0.01 2 3 5 25 °C 25 °C Ta= °C --20 80°C 0°C Ta=8 --20°C 2 3 5 2 3 5 2 10 ITR08444 --0.01 --0.1 2 3 5 --1.0 2 3 5 Collector Current, IC -- A 2 --10 ITR08443 0.1 1.0 Collector Current, IC -- A No.686-3/5 2SB824 / 2SD1060 --10 7 VBE(sat) -- IC 2SB824 10 7 VBE(sat) -- IC 2SD1060 Base-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 5 3 2 --1.0 7 5 3 2 2 3 5 --0.1 IC / IB=10 1.0 7 5 3 2 IC / IB=10 IC / IB=20 IC / IB=20 2 3 5 --1.0 2 3 5 Collector Current, IC -- A 2 --10 7 2 --10 ITR08445 2 10 7 2 3 5 0.1 2 3 5 1.0 2 3 5 ASO Collector Current, IC -- A 2 10 ITR08446 ASO 2SB824 ICP= --9A 2SD1060 ICP=9A 10 Collector Current, IC -- A Collector Current, IC -- A 5 3 2 --1.0 7 5 3 2 --0.1 5 IC= --5A s 1m s ion 10m s rat 0m pe 10 C o D 5 3 2 1.0 7 5 3 2 IC=5A s 0m s 1m ms 10 era tio n DC op 1ms to 100ms : Single pulse 7 --1.0 2 3 5 7 --10 2 3 5 0.1 7 --100 ITR08447 1ms to 100ms : Single pulse 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector-to-Emitter Voltage, VCE -- V 2.0 1.8 1.75 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Collector-to-Emitter Voltage, VCE -- V ITR08448 35 PC -- Ta 2SB824 / 2SD1060 PC -- Tc 2SB824 / 2SD1060 30 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 140 160 25 No he 20 at sin k 15 10 5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT12873 Case Temperature, Tc -- °C ITR08449 No.686-4/5 2SB824 / 2SD1060 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice. PS No.686-5/5