Ordering number : EN686K
2SD1060
SANYO Semiconductors
DATA SHEET
2SD1060
Applications
•
NPN Epitaxial Planar Silicon Transistor
50V / 5A Switching Applications
Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching
Features
•
Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 60 50 6 5 9 1.75 30 150 --55 to +150 Unit V V V A A W W °C °C
Package Dimensions
unit : mm (typ) 7536-002
10.0 (1.7) 1.3 4.5 1.3
Product & Package Information
• Package : TO-220-3L • JEITA, JEDEC : SC-46, TO-220AB • Minimum Packing Quantity : 50 pcs./magazine
3.6 2.8
Marking
Electrical Connection
2
(0.6) 15.7 8.9 MAX 13.3
9.2
D1060
Rank LOT No.
1
3.0
1.52 13.08 1.27 0.8
3 0.5
123
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220-3L
2.54
2.54
2.4
http://semicon.sanyo.com/en/network
40412 TKIM TC-00002737/82207FA TIIM TC-00000844/913003TN(KT)/91098HA(KT)/D251MH/4017KI No.686-1/4
2SD1060
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=1A VCE=2V, IC=2A VCE=5V, IC=1A VCB=10V, f=1MHz IC=3A, IB=0.3A IC=1mA, IE=0A IC=1mA, RBE=∞ IE=1mA, IC=0A See specified Test Circuit 60 50 6 0.1 1.4 0.2 100* 80 30 100 0.3 MHz pF V V V V μs μs μs Conditions Ratings min typ max 0.1 0.1 280* Unit mA mA
* : The 2SD1060 is classified by 1A hFE as follows
Rank hFE R 100 to 200 S 140 to 280
Switching Time Test Circuit
PW=20μs D.C.≤1% INPUT VR 50Ω + 100μF VBE= --5V + 470μF VCC=20V IB1 OUTPUT IB2 RB
RL= 10Ω
IC=10IB1= --10IB2=2A
10
IC -- VCE
mA 45
AA 0m 0m mA A 40 35 300 250m 200mA
10 9 8 7 6 5
IC -- VBE
VCE=2V
Collector Current, IC -- A
100mA
6
3 2 1
2
0
IB=0mA
0 0.4 0.8 1.2 1.6 2.0 2.4 ITR08436
0
0
0.2
0.4
0.6
0.8
--20°C
1.0
4
4
Ta=8 0°C 25°C
50mA
Collector Current, IC -- A
8
0m
A
500
150mA
1.2
1.4
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
ITR08438
No.686-2/4
2SD1060
1000 7 5
hFE -- IC
VCE=2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
10 5 3 2 1.0 5 3 2 0.1 5 3 2 0.01 2 3 5
VCE(sat) -- IC
IC / IB=10
DC Current Gain, hFE
3 2
Ta=80°C
100 7 5 3 2 10 0.01
25°C --20°C
25
°C
8 Ta=
0°C
C --20°
3 5 1.0 2 3 5 2 10 ITR08442
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC -- A
10 5
VCE(sat) -- IC
2 10 ITR08440
0.1
2
Collector Current, IC -- A
10 7
VBE(sat) -- IC
IC / IB=20 Base-to-Emitter Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
3 2 1.0 5 3 2 0.1 5 3 2 0.01 2 3 5
5 3 2
°C 25
1.0 7 5 3
IC / IB=10
IC / IB=20
0°C Ta=8 --20°C
0.1 2 3 5 1.0 2 3 5 2 10 ITR08444
2
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC -- A
2 10
ASO
Collector Current, IC -- A
2.0 1.8 1.75 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
2 10 ITR08446
PC -- Ta
ICP=9A IC=5A Collector Dissipation, PC -- W
10 0m s
Collector Current, IC -- A
7 5 3 2 1.0 7 5 3 2 0.1
1m s
10
DC op tio era n
No
ms
he
at
sin
k
1ms to 100ms : Single pulse
5 7 1.0 2 3 5 7 10 2 3
Collector-to-Emitter Voltage, VCE -35
PC -- Tc
100 V ITR08448
5
7
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT12873
30
Collector Dissipation, PC -- W
25 20 15 10 5 0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
ITR08449
No.686-3/4
2SD1060
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This catalog provides information as of April, 2012. Specifications and information herein are subject to change without notice.
PS No.686-4/4