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2SD1060_12

2SD1060_12

  • 厂商:

    SANYO(三洋)

  • 封装:

  • 描述:

    2SD1060_12 - NPN Epitaxial Planar Silicon Transistor 50V / 5A Switching Applications - Sanyo Semicon...

  • 数据手册
  • 价格&库存
2SD1060_12 数据手册
Ordering number : EN686K 2SD1060 SANYO Semiconductors DATA SHEET 2SD1060 Applications • NPN Epitaxial Planar Silicon Transistor 50V / 5A Switching Applications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching Features • Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 60 50 6 5 9 1.75 30 150 --55 to +150 Unit V V V A A W W °C °C Package Dimensions unit : mm (typ) 7536-002 10.0 (1.7) 1.3 4.5 1.3 Product & Package Information • Package : TO-220-3L • JEITA, JEDEC : SC-46, TO-220AB • Minimum Packing Quantity : 50 pcs./magazine 3.6 2.8 Marking Electrical Connection 2 (0.6) 15.7 8.9 MAX 13.3 9.2 D1060 Rank LOT No. 1 3.0 1.52 13.08 1.27 0.8 3 0.5 123 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220-3L 2.54 2.54 2.4 http://semicon.sanyo.com/en/network 40412 TKIM TC-00002737/82207FA TIIM TC-00000844/913003TN(KT)/91098HA(KT)/D251MH/4017KI No.686-1/4 2SD1060 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=1A VCE=2V, IC=2A VCE=5V, IC=1A VCB=10V, f=1MHz IC=3A, IB=0.3A IC=1mA, IE=0A IC=1mA, RBE=∞ IE=1mA, IC=0A See specified Test Circuit 60 50 6 0.1 1.4 0.2 100* 80 30 100 0.3 MHz pF V V V V μs μs μs Conditions Ratings min typ max 0.1 0.1 280* Unit mA mA * : The 2SD1060 is classified by 1A hFE as follows Rank hFE R 100 to 200 S 140 to 280 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT VR 50Ω + 100μF VBE= --5V + 470μF VCC=20V IB1 OUTPUT IB2 RB RL= 10Ω IC=10IB1= --10IB2=2A 10 IC -- VCE mA 45 AA 0m 0m mA A 40 35 300 250m 200mA 10 9 8 7 6 5 IC -- VBE VCE=2V Collector Current, IC -- A 100mA 6 3 2 1 2 0 IB=0mA 0 0.4 0.8 1.2 1.6 2.0 2.4 ITR08436 0 0 0.2 0.4 0.6 0.8 --20°C 1.0 4 4 Ta=8 0°C 25°C 50mA Collector Current, IC -- A 8 0m A 500 150mA 1.2 1.4 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V ITR08438 No.686-2/4 2SD1060 1000 7 5 hFE -- IC VCE=2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 10 5 3 2 1.0 5 3 2 0.1 5 3 2 0.01 2 3 5 VCE(sat) -- IC IC / IB=10 DC Current Gain, hFE 3 2 Ta=80°C 100 7 5 3 2 10 0.01 25°C --20°C 25 °C 8 Ta= 0°C C --20° 3 5 1.0 2 3 5 2 10 ITR08442 2 3 5 0.1 2 3 5 1.0 2 3 5 Collector Current, IC -- A 10 5 VCE(sat) -- IC 2 10 ITR08440 0.1 2 Collector Current, IC -- A 10 7 VBE(sat) -- IC IC / IB=20 Base-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 1.0 5 3 2 0.1 5 3 2 0.01 2 3 5 5 3 2 °C 25 1.0 7 5 3 IC / IB=10 IC / IB=20 0°C Ta=8 --20°C 0.1 2 3 5 1.0 2 3 5 2 10 ITR08444 2 2 3 5 0.1 2 3 5 1.0 2 3 5 Collector Current, IC -- A 2 10 ASO Collector Current, IC -- A 2.0 1.8 1.75 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 2 10 ITR08446 PC -- Ta ICP=9A IC=5A Collector Dissipation, PC -- W 10 0m s Collector Current, IC -- A 7 5 3 2 1.0 7 5 3 2 0.1 1m s 10 DC op tio era n No ms he at sin k 1ms to 100ms : Single pulse 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -35 PC -- Tc 100 V ITR08448 5 7 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT12873 30 Collector Dissipation, PC -- W 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C ITR08449 No.686-3/4 2SD1060 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2012. Specifications and information herein are subject to change without notice. PS No.686-4/4
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