2SD1207

Ordering number : EN930D 2SB892 / 2SD1207 SANYO Semiconductors DATA SHEET 2SB892 / 2SD1207 Applications • PNP / NPN Epitaxial Planar Silicon Transistors Large-Current Switching Applications Power supplies, relay drivers, lamp drivers, and automotive wiring. Features • • • FBET and MBIT processed (Original process of SANYO). Low saturation voltage. Large current capacity and wide ASO. Specifications ( ) : 2SB892 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (--)60 (--)50 (--)6 (--)2 (--)4 1 150 --55 to +150 Unit V V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)50V, IE=0A VEB=(-)4V, IC=0A Ratings min typ max (--)0.1 (--)0.1 Unit μA μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’ s products or equipment. www.semiconductor-sanyo.com/network D0308EA MS IM TC-00001739 / 10904TN (KT)/91098HA (KT)/4067KI/3145KI No.930-1/5 2SB892 / 2SD1207 Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol hFE1* hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCE=(-)2V, IC=(-)100mA VCE=(-)2V, IC=(--)1.5A VCE=(-)10V, IC=(--)50mA VCB=(-)10V, f=1MHz IC=(--)1A, IB=(--)50mA IC=(--)1A, IB=(--)50mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ IE=(-)10μA, IC=0A (--)60 (--)50 (--)6 Ratings min 100 40 150 (22)12 (--0.3)0.15 (--)0.9 (--0.7)0.4 (--)1.2 MHz pF V V V V V typ max 560 Unit * : The 2SB892 / 2SD1207 are graded as follows by hFE at 100mA : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Package Dimensions unit : mm (typ) 7520-002 6.0 5.0 4.7 1.0 0.5 0.6 0.5 3.0 8.5 0.5 14.0 123 1 : Emitter 2 : Collector 3 : Base 1.45 1.45 SANYO : MP --2.4 IC -- VCE 2SB892 2.4 IC -- VCE 50 mA 40m A 2SD1207 --2.0 2.0 Collector Current, IC -- A Collector Current, IC -- A --5 --1.6 0m 25mA 1.6 A 0 --2 mA A --10m --8mA --6mA --4mA --2mA 15mA 1.2 --1.2 8mA 0.8 --0.8 4mA --0.4 0.4 2mA 0 0 --0.4 --0.8 --1.2 IB=0mA --1.6 --2.0 --2.4 0 0 0.4 0.8 1.2 ITR08646 IB=0mA 1.6 2.0 2.4 ITR08647 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No.930-2/5 2SB892 / 2SD1207 --1200 IC -- VCE --7mA 2SB892 1200 IC -- VCE 7mA 6mA 2SD1207 --1000 --6mA 1000 Collector Current, IC -- mA Collector Current, IC -- mA --5mA --800 5mA 800 --4mA --600 4mA 600 --3mA 3mA 2mA 1mA --400 --2mA --1mA 400 --200 200 0 0 --2 --4 --6 IB=0mA --8 --10 --12 ITR08648 0 0 2 4 6 IB=0mA 8 10 12 ITR08649 Collector-to-Emitter Voltage, VCE -- V --1200 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 1200 IC -- VBE 2SB892 VCE= --2V 2SD1207 VCE=2V 1000 --1000 Collector Current, IC -- mA --800 Collector Current, IC -- mA 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 800 --600 600 --400 400 --200 200 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ITR08651 Base-to-Emitter Voltage, VBE -- V 1000 7 5 ITR08650 1000 hFE -- IC Base-to-Emitter Voltage, VBE -- V hFE -- IC 2SB892 VCE= --2V 7 5 2SD1207 VCE=2V DC Current Gain, hFE DC Current Gain, hFE 3 2 3 2 100 7 5 3 2 10 --10 100 7 5 3 2 10 10 2 3 5 7 --100 2 3 5 7 --1000 2 3 5 2 3 5 7 100 2 3 5 7 1000 2 3 5 Collector Current, IC -- mA 1000 7 ITR08652 1000 7 f T -- IC Collector Current, IC -- mA ITR08653 f T -- IC Gain-Bandwidth Product, f T -- MHz 5 3 2 Gain-Bandwidth Product, f T -- MHz 2SB892 VCB= --10V 5 3 2 2SD1207 VCB=10V 100 7 5 3 2 100 7 5 3 2 10 --10 2 3 5 7 --100 2 3 5 7 --1000 2 3 10 10 2 3 5 7 100 2 3 5 7 1000 2 3 Collector Current, IC -- mA ITR08654 Collector Current, IC -- mA ITR08655 No.930-3/5 2SB892 / 2SD1207 2 Cob -- VCB 2SB892 f=1MHz 100 7 Cob -- VCB 2SD1207 f=1MHz Output Capacitance, Cob -- pF 100 7 5 Output Capacitance, Cob -- pF 2 3 5 7 2 3 5 7 --100 ITR08656 5 3 2 3 2 10 7 5 1.0 10 7 5 --1.0 --10 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V --100 5 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 100 7 100 ITR08657 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 --10 5 2 --1.0 5 2 --0.1 5 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SB892 IC / IB=20 5 2 10 5 2 1.0 5 2 0.1 5 2 2SD1207 IC / IB=20 --0.01 --10 2 3 5 7 --100 2 3 5 7 --1000 2 3 0.01 10 2 3 5 7 100 2 3 5 7 1000 2 3 Collector Current, IC -- mA 10 5 3 2 1.0 ITR08658 1200 ASO Collector Current, IC -- mA ITR08659 PC -- Ta 2SB892 / 2SD1207 ICP=4A 2SB892 / 2SD1207 Collector Dissipation, PC -- mW IC=2A 1m s 1000 Collector Current, IC -- A 800 10 0m 5 3 2 0.1 5 3 2 0.01 5 3 DC 10 s op ms era tio n 600 400 200 (For PNP minus sign is omitted.) 5 7 1.0 2 3 5 7 10 2 3 0 7 100 V ITR08661 5 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- Ambient Temperature, Ta -- °C ITR08660 No.930-4/5 2SB892 / 2SD1207 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice. PS No.930-5/5