2SD1835

Ordering number:ENN2158A PNP/NPN Epitaxial Planar Silicon Transistor 2SB1229/2SD1835 Driver Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2003B [2SB1229/2SD1835] 5.0 4.0 Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 ( ) : 2SB1229 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : NP Ratings (–)60 (–)50 (–)6 (–)2 (–)3 0.75 150 –55 to +150 Unit V V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1.5A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz IC=(–)1A, IB=(–)50mA 100* 40 150 12(22) 0.15 (–0.3) 0.4 (–0.7) MHz pF V V Conditions Ratings min typ max (–)100 (–)100 560* Unit nA nA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1003TN (KT)/92098HA (KT)/4107KI/0296AT, TS No.2158–1/5 2SB1229/2SD1835 Continued from preceding page. Parameter Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON TIme Storage Time Fall Time Symbol Conditions Ratings min (–)60 (–)50 (–)6 60(60) 550 (450) 30 30 typ (–)0.9 max (–)1.2 Unit V V V V ns ns ns ns ns VBE(sat) IC=(–)1A, IB=(–)50mA V(BR)CBO IC=(–)10μA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO ton tstg tf IE=(–)10μA, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit * : The 2SB1229/2SD1835 are classified by 100mA hFE as follows : Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 U 280 to 560 Switching Time Test Circuit IB1 OUTPUT IB2 INPUT VR 50Ω + 100μF VBE= --5V + 470μF VCC RB RL IC=10IB1= --10IB2=500mA, VCC=25V (For PNP, the polarity is reversed.) --2.4 IC -- VCE 2SB1229 0m A mA --20 2.4 IC -- VCE 5 0mA 4 0mA 25mA 2SD1835 --2.0 2.0 Collector Current, IC – A --1.6 Collector Current, IC – A --5 1.6 --10mA --1.2 15mA 1.2 --8mA --6mA 8mA 4mA 2mA --0.8 --4mA --2mA 0.8 --0.4 0.4 0 0 --0.4 --0.8 --1.2 IB=0 --1.6 --2.0 --2.4 0 0 0.4 0.8 ITR09360 1200 IB=0 1.2 1.6 2.0 2.4 ITR09361 Collector-to-Emitter Voltage, VCE – V --1200 Collector-to-Emitter Voltage, VCE – V IC -- VCE --7mA --6mA --5mA --4mA --3mA --2mA --1mA IC -- VCE 7mA 6mA 5mA 2SB1229 2SD1835 --1000 1000 Collector Current, IC – mA --800 Collector Current, IC – mA 800 4mA 3mA 2mA 1mA --600 600 --400 400 --200 200 0 0 --2 --4 IB=0 --6 --8 --10 --12 0 0 IB=0 2 4 6 8 10 12 ITR09363 Collector-to-Emitter Voltage, VCE – V ITR09362 Collector-to-Emitter Voltage, VCE – V No.2158–2/5 2SB1229/2SD1835 --2.4 IC -- VBE 2SB1229 VCE= --2V Collector Current, IC – A 2.4 IC -- VBE 2SD1835 VCE=2V --2.0 2.0 Collector Current, IC – A --1.6 1.6 --1.2 1.2 --0.4 Ta= 7 25°C --25°C 0.4 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 ITR09364 0 0 0.2 0.4 0.6 0.8 25 ° C --25°C 1.0 5°C --0.8 0.8 Ta=7 5°C 1.2 ITR09365 Base-to-Emitter Voltage, VBE – V 1000 7 5 Base-to-Emitter Voltage, VBE – V 1000 7 5 hFE -- IC 2SB1229 VCE= --2V Ta=75°C hFE -- IC 2SD1835 VCE=2V DC Current Gain, hFE DC Current Gain, hFE 3 2 3 2 25°C --25°C Ta=75°C 25°C --25°C 100 7 5 3 2 100 7 5 3 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC – A 1000 ITR09366 1000 Collector Current, IC – A ITR09367 fT -- IC 2SB1229 VCE=10V fT -- IC 2SD1835 VCE=10V Gain-Bandwidth Product, fT – MHz Gain-Bandwidth Product, fT – MHz 3 7 5 3 2 7 5 3 2 100 7 5 3 2 100 7 5 3 2 10 --10 2 3 5 7 --100 32 10 3 5 7 --1000 2 10 2 3 5 7 100 2 3 5 7 1000 2 3 ITR09368 100 7 Collector Current, IC – mA 2 Cob -- VCB Collector Current, IC – mA ITR09369 Cob -- VCB 2SB1229 f=1MHz Output Capacitance, Cob -- pF 2SD1835 f=1MHz Output Capacitance, Cob -- pF 100 7 5 3 2 5 3 2 10 7 5 1.0 10 7 5 --1.0 2 2 3 5 7 --100 --10 Collector-to-Base Voltage, VCB -- V ITR09370 3 5 7 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 7 100 ITR09371 No.2158–3/5 2SB1229/2SD1835 5 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 2SB1229 IC / IB=20 5 3 2 VCE(sat) -- IC 2SD1835 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 3 2 --1000 7 5 3 2 --100 7 5 3 2 --10 1000 7 5 3 2 100 7 5 3 2 10 7 0.01 5°C Ta=7 C --25° 7 --0.01 2 3 C 25° Ta=75°C 25°C --25°C 2 3 5 5 Collector Current, IC – A 7 --0.1 2 3 5 7 --1.0 2 3 ITR09372 10 Collector Current, IC – A 7 0.1 2 3 5 7 1.0 2 3 ITR09373 --10 7 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE (sat) – V 2SB1229 IC / IB=20 VBE(sat) -- IC 2SD1835 IC / IB=20 7 5 Base-to-Emitter Saturation Voltage, VBE (sat) – V 5 3 2 3 2 --1.0 7 5 3 Ta= --25°C 25°C 1.0 7 5 3 Ta= --25°C 25°C 75°C 75°C 7 --0.01 2 3 5 Collector Current, IC – A 7 --0.1 2 3 5 7 --1.0 2 3 7 0.01 2 3 ITR09374 1000 Collector Current, IC – A 5 7 0.1 2 3 5 7 1.0 2 3 ITR09375 5 3 2 ASO ICP=3A 2SB1229 / 2SD1835 PC -- Ta 2SB1229 / 2SD1835 Collector Dissipation, PC – mW 5 7 100 ITR09376 IC =2 A Collector Current, IC – A 1.0 7 5 3 2 0.1 7 5 3 2 800 750 1m s DC 10 10 0m s op era tio n 600 ms 400 0.01 7 5 3 Ta=25°C Single pulse (For PNP, minus sign is omitted.) 5 7 1.0 2 3 5 7 10 2 3 200 0 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE – V Ambient Temperature, Ta – ˚C ITR09377 No.2158–4/5 2SB1229/2SD1835 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2003. Specifications and information herein are subject to change without notice. PS No.2158–5/5