2SD1886C

Ordering number : EN7201 2SD1886C SANYO Semiconductors DATA SHEET 2SD1886C Features • • • • NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 1500 700 5 8 25 3.0 80 150 --55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Conditions VCB=800V, IE=0A VCE=1500V, RBE=0A IC=100mA, IB=0A VBE=4V, IC=0A 700 1.0 Ratings min typ max 10 1.0 Unit μA mA V mA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20608KC TI IM TA-3443 No. 7201-1/4 2SD1886C Continued from preceding page. Parameter DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Fall Time Symbol hFE1 hFE2 VCE(sat) VBE(sat) tf VCE=5V, IC=1A VCE=5V, IC=8A IC=7.2A, IB=1.44A IC=7.2A, IB=1.44A IC=5A, IB1=1A, IB2=--2A Conditions Ratings min 15 5 8 3 1.5 0.3 V V μs typ max Unit Package Dimensions unit : mm (typ) 7504-001 3.4 Switching Time Test Circuit 16.0 5.0 5.6 3.1 PW=20μs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω + 100μF VBE= --2V + 470μF VCC=200V RB 21.0 22.0 8.0 RL=40.0Ω 4.0 2.8 2.0 0.7 20.4 0.9 1 2 5.45 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH 5.45 3.5 12 IC -- VCE 1.8A 1.6A 1.4A 1.2A 2.0A 0.8 2.1 12 IC -- VBE VCE=5V 10 10 Collecotr Current, IC -- A 8 1.0A 0.8A 0.6A 0.4A Collector Current, IC -- A 8 6 6 4 0.2A 4 2 2 0 0 1 2 3 4 5 6 7 8 IB=0A 9 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT03005 Collector-to-Emitter Voltage, VCE -- V 100 7 5 IT03004 10 7 5 hFE -- IC Base-to-Emitter Voltage, VBE -- V VCE(sat) -- IC Ta= 120 °C 25° C --40 °C Ta=120°C 25°C VCE=5V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 DC Current Gain, hFE 3 2 --40°C 10 7 5 3 2 C 25° 2 Ta=1 0°C C --40° 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 0.01 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A IT03006 Collector Current, IC -- A 7 10 IT03007 No. 7201-2/4 2SD1886C 10 7 SW Time -- IC Switching Time, SW Time -- μs tstg VCC=200V IC / IB1=5 IB2 / IB1=2 R load 10 7 5 SW Time -- IB2 VCC=200V IC=5A IB1=1A R load Switching Time, SW Time -- μs 5 3 2 tstg 3 2 1.0 7 5 3 2 1.0 7 tf 5 3 2 tf 0.1 0.1 2 3 5 7 1.0 2 3 5 100 7 5 3 2 Forward Bias A S O ICP=25A Collector Current, IC -- A 10 IT03008 7 0.1 0.1 2 3 5 7 1.0 2 3 5 5 3 2 Reverse Bias A S O L=500μH IB2= --2A Tc=25°C Single pulse Base Current, IB2 -- A 7 10 IT03009 10 Collector Current, IC -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 P C =8 Collector Current, IC -- A IC=8A s 0μ 0W 10 7 5 3 2 1.0 7 5 3 0μ 30 s ms 10 s 1m D C op er at io n 0.01 1.0 Tc=25°C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 2 0.1 100 Collector-to-Emitter Voltage, VCE -- V 3.5 5 7 1000 IT03010 2 3 5 7 1000 2 IT03011 Collector-to-Emitter Voltage, VCE -- V 90 80 PC -- Ta PC -- Tc Collector Dissipation, PC -- W Collector Dissipation, PC -- W 3.0 70 60 50 40 30 20 10 0 2.5 2.0 No he at 1.5 sin k 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT03012 Case Temperature, Tc -- °C IT03013 No. 7201-3/4 2SD1886C SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice. PS No. 7201-4/4