2SJ340

Ordering number:ENN6420 P-Channel Silicon MOSFET 2SJ340 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. Package Dimensions unit:mm 2093A [2SJ340] 0.9 10.2 4.5 1.3 11.5 1.6 20.9 1.2 11.0 9.4 0.8 8.8 0.4 1 2 3 2.7 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP unit:mm 2090A [2SJ340] 0.8 10.2 4.5 1.3 1.5max 8.8 9.9 3.0 2.55 1.2 2.55 2.7 1.35 1 0.8 2 3 0 to 0.3 0.4 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80700TS (KOTO) TA-2165 No.6420–1/4 1.4 2SJ340 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Conditions Ratings –60 ±20 –30 –120 1.65 70 150 –55 to +150 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VSD ID=–1mA, VGS=0 IG=±100µA, VDS=0 VDS=–60V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–15A ID=–15A, VGS=–10V ID=–15A, VGS=–4V VDS=–20V, f=1MHz VDS=–20V, f=1MHz VDS=–20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=–30A, VGS=0 –1.0 15 25 30 40 3800 1200 300 30 150 450 220 –1.0 –1.5 40 55 Conditions Ratings min –60 ±20 –100 ±10 –2.0 typ max Unit V V µA µA V S mΩ mΩ pF pF pF ns ns ns ns V Marking:J304 Switching Time Test Circuit VDD=--30V Vin 0V --10V Vin PW=10µs D.C.≤1% P.G 50Ω 2SJ340 ID=--15A RL=2Ω VOUT D G S No.6420–2/4 2SJ340 --50 ID -- VDS 5.0V --4 .5V VG S =-. --4 0V --50 ID -- VGS VDS=--10V --40 --40 Tc=-25° C 75° C Drain Current, ID – A --30 Drain Current, ID – A --3.5V 25°C --30 --20 --3.0V --20 --10 --2.5V --10 0 0 --2 --4 --6 --8 --10 IT00699 0 0 --1 --2 --3 --4 --5 --6 IT00700 Drain-to-Source Voltage, VDS – V 100 yfs -- ID Gate-to-Source Voltage, VGS – V 80 70 RDS(on) -- VGS Tc=25°C ID=--15A Forward Transfer Admittance, | yfs | – S 7 5 3 2 VDS=--10V Tc= C 75° --25 °C 25°C Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 60 50 40 30 20 10 0 10 7 5 3 2 1.0 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 0 --2 --4 --6 --8 --10 --12 --14 IT00702 Drain Current, ID – A 80 70 60 50 40 30 20 10 0 --80 IT00701 2 10000 7 5 Gate-to-Source Voltage, VGS – V RDS(on) -- Tc Ciss, Coss, Crss -- VDS f=1MHz Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 4V =-V GS A, 0V --15 =--1 I D= VGS A, --15 I D= Ciss, Coss, Crss – pF Ciss 3 2 1000 7 5 3 2 100 7 5 Coss Crss --40 0 40 80 120 160 IT00703 2 0 --5 --10 --15 --20 --25 --30 IT00704 Case Temperature, Tc – ˚C 2 1000 7 5 3 2 100 7 5 3 2 10 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS – V SW Time -- ID VDD=--30V VGS=--10V td(off) ASO IDP=--120A