2SJ579

Ordering number:ENN6384 P-Channel Silicon MOSFET 2SJ579 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2062A [2SJ579] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings –60 ±20 –1.2 –4.8 1.5 3.5 150 –55 to +150 Unit V V A A W W ˚C ˚C Mounted on a ceramic board (250mm2× 0.8mm) Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=–1mA, VGS=0 VDS=–60V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–0.6A ID=–0.6A, VGS=–10V ID=–0.4mA, VGS=–4V –1.0 0.9 1.2 620 800 800 1150 Conditions Ratings min –60 –10 ±10 –2.4 typ max Unit V µA µA V S mΩ mΩ Marking : JQ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31000TS (KOTO) TA-2315 No.6384–1/4 2SJ579 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=–20V, f=1MHz VDS=–20V, f=1MHz VDS=–20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=–10V, VGS=–10V, ID=–1.2A VDS=–10V, VGS=–10V, ID=–1.2A VDS=–10V, VGS=–10V, ID=–1.2A IS=–1.2A, VGS=0 Conditions Ratings min typ 130 35 9 8 7 22 8 5 0.8 0.9 –0.82 –1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=--30V VIN 0V --10V VIN PW=10µs D.C.≤1% ID=--0.6A RL=50Ω D VOUT G P.G 50Ω 2SJ579 S --1.4 ID -- VDS --5.0V --2.5 ID -- VGS --25 °C Tc= VDS=--10V --8.0V Drain Current, ID – A --6.0V .0V --1 0 --0.8 --1.5 --3.0V --0.6 --1.0 --0.4 VGS=--2.5V --0.2 --0.5 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 Drain-to-Source Voltage, VDS – V 1400 IT01167 Gate-to-Source Voltage, VGS – V 1400 75° IT01168 --1.0 RDS(on) -- VGS Tc=25°C Drain Current, ID – A RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS (on) – mΩ Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 1200 1200 1000 --0.6A 1000 800 800 ID=--0.4A 600 V --10 --0. S= I D= A, VG --0.6 I D= VG 4A, --4 S= V 600 400 400 200 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 200 0 --60 --40 --20 0 20 40 60 80 100 120 C 140 160 IT01170 --4 --3. 5V --2.0 Gate-to-Source Voltage, VGS – V IT01169 Case Temperature, Tc – ˚C No.6384–2/4 25° --1.2 .0V C 2SJ579 10 | yf s | - ID VDS=--10V Forward Transfer Admittance, | yfs | – S 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 5 7--0.01 2 3 5 7 --0.1 2 3 --10 7 5 3 2 --1.0 7 5 3 2 IF -- VSD VGS = 0 = Tc C 5° --2 °C 75 25 °C Forward Current, IF – A °C 2 5 °C --0.6 3 2 --0.01 5 7--1.0 2 3 5 7 --10 IT01171 1000 7 5 3 0 --0.1 --0.2 --0.3 --0.4 0.01 --0.001 2 3 --0.5 Tc= 75 --0.7 --25° C --0.8 --0.1 7 5 --0.9 --1.0 Drain Current, ID – A 100 7 Diode Forward Voltage, VSD – V IT01172 SW Time -- ID VDD=--30V VGS=--10V Ciss, Coss, Crss – pF Ciss, Coss, Crss -- VDS f=1MHz Switching Time, SW Time – ns 5 3 2 td(off) 2 100 7 5 3 2 10 7 5 3 2 1.0 Ciss 10 7 5 3 2 td(on) tf Coss Crss tr 1.0 7 --0.1 2 3 5 7 Drain Current, ID – A --1.0 2 3 0 --10 --20 --30 --40 --50 --60 IT01174 IT01173 --10 7 5 3 2 Drain-to-Source Voltage, VDS – V --10 VGS -- Qg VDS=--10V ID=--1.2A Drain Current, ID – A ASO IDP=--4.8A ≤10µs 10 0µ s 1m 10 s m s Gate-to-Source Voltage, VGS – V --9 --8 --7 --6 --5 --4 --3 --2 --1 0 0 ID=--1.2A DC --1.0 7 5 3 2 --0.1 7 5 3 2 10 op era 0m n s Operation in this area is limited by RDS(on). tio Tc=25°C 2 3 5 7 --10 2 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Total Gate Charge, Qg – nC 1.6 --0.01 Single pulse 23 5 7 --1.0 --0.1 IT01175 4.0 Drain-to-Source Voltage, VDS – V 5 7 --100 IT01176 PD -- Ta M PD -- Tc Allowable Power Dissipation, PD – W 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 Allowable Power Dissipation, PD – W 140 160 ou 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 nt ed on ac er am ic bo ar d (2 50 m m2 ×0 .8 m m ) 40 60 80 100 120 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C IT01178 Case Temperature, Tc – ˚C IT01177 No.6384–3/4 2SJ579 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6384–4/4